SAVANTIC 2SC4110_1

SavantIC Semiconductor
Product Specification
2SC4110
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·Fast switching speed
·Wide area of safe operation
·High voltage,high reliability
APPLICATIONS
·For switching regulator applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(TC=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
500
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
25
A
ICP
Collector current-peak
40
A
IB
Base current
8
A
PC
Collector power dissipation
TC=25
160
Ta=25
2.5
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SC4110
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ;RBE=;
400
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA; IE=0
500
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA; IC=0
7
V
VCE(sat)
Collector-emitter saturation voltage
IC=16A; IB=3.2A
0.8
V
VBE(sat)
Base-emitter saturation voltage
IC=16A; IB=3.2A
1.5
V
ICBO
Collector cut-off current
VCB=400V; IE=0
10
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
µA
hFE-1
DC current gain
IC=3.2A ; VCE=5V
15
hFE-2
DC current gain
IC=16A ; VCE=5V
10
hFE-3
DC current gain
IC=10mA ; VCE=5V
10
fT
Transition frequency
IC=3.2A ; VCE=10V
20
MHz
Cob
Output capacitance
IE=0; VCB=10V,f=1MHz
300
pF
50
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=20A; IB1=4A;IB2=-8A
RL=10B;VCC=200V
2
0.5
µs
2.5
µs
0.3
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
2SC4110