SAVANTIC S2000AF

SavantIC Semiconductor
Product Specification
S2000AF
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3P(H)IS package
·High voltage
·Fast switching
APPLICATIONS
·Horizontal deflection for color TV
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
ABSOLUTE MAXIMUM RATINGS (TC=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
700
V
VEBO
Emitter-base voltage
Open collector
10
V
IC
Collector current
8
A
ICM
Collector current-peak
15
A
PC
Collector power dissipation
50
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance from junction to case
VALUE
2.5
UNIT
/W
SavantIC Semiconductor
Product Specification
S2000AF
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ;IB=0
700
V
V(BR)EBO
Emitter-base breakdown voltage
IE=10mA ;IC=0
10
V
VCE(sat)
Collector-emitter saturation voltage
IC=4.5A ;IB=2.0A
1.0
V
VBE(sat)
Base-emitter saturation voltage
IC=4.5A ;IB=2.0A
1.3
V
ICES
Collector cut-off current
VCE=1500V; VBE=0
TC=125
1
2
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1
mA
hFE
DC current gain
IC=1A ; VCE=5V
Transition frequency
IC=0.1A ; VCE=5V;f=5MHz
fT
CONDITIONS
MIN
TYP.
MAX
UNIT
8
7
MHz
7
µs
0.55
µs
Switching times inductive load
ts
Storage time
tf
Fall time
IC=4.5A ; hFE=2.5; VCC=140V
LC=0.9mH; LB=3µH
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
S2000AF