BC817-16 BC817-25 NPN Transistor BC817-40 Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES SOT-23 n Power dissipation PCM: 300 mW (Tamb=25 C) Collector current ICM: 500 mA Collector-base voltage V(BR)CBO: 30 V Operating and junction temperature range TJ, Tstg: -55 C to +150 C For general AF applications High collector current High current gain Low collector-emitter saturation voltage n n n o n n n n Dim Min Max A 2.800 3.040 B 1.200 1.400 1 C 0.890 1.110 BASE D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 COLLECTOR 3 o 3 1 2 A L 2 3 1 o V EMITTER B S Top View 2 G C H D J K L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm o ELECTRICAL CHARACTERISTICS (Tamb=25 C unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=100µA, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO Ic=10 mA, IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=1µA, IC=0 5 V Collector cut-off current ICBO VCB=45V, IE=0 0.1 µA Emitter cut-off current IEBO VEB=4V, IC=0 0.1 µA hFE(1) VCE=1V, IC=100mA hFE(2) VCE=1V, IC=500mA Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=50mA Base-emitter voltage & saturation voltage VBE & VCE=1 V, IC=500 mA VBE(sat) IC=500mA, IB=50mA fT VCE=5V, IC=10mA, f=100MHz Cob VCB=10V, f=1MHz DC current gain Transition frequency Collector output capacitance 100 40 600 0.7 V 1.2 V 100 MHz 10 pF CLASSIFICATION OF hFE(1) Rank Range Marking http://www.SeCoSGmbH.com 01-Jun-2007 Rev. C BC817-16 BC817-25 BC817-40 100-250 160-400 250-600 6A 6B 6C Any changing of specification will not be informed individual Page 1 of 2 Elektronische Bauelemente BC817-16 BC817-25 NPN Transistor BC817-40 TYPICAL CHARACTERISTICS http://www.SeCoSGmbH.com 01-Jun-2007 Rev. C Any changing of specification will not be informed individual Page 2 of 2