SMG2305
-4.2A, -20V,RDS(ON) 65mΩ
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
SC-59
A
The SMG2305 provide the designer with the best
combination of fast switching, low on-resistance
and cost-effectiveness.
L
S
2
The SMG2305 is universally preferred for all commercial
3
Top View
B
1
industrial surface mount application and suited for low
voltage applications such as DC/DC converters.
D
G
Features
J
C
* Super high dense cell design for extremely low RDS(ON)
K
H
* Reliable and rugged
Drain
Gate
Applications
Min
Max
A
2.70
3.10
B
1.40
1.60
C
1.00
1.30
D
0.35
0.50
G
1.70
2.10
H
0.00
0.10
J
0.10
0.26
K
0.20
0.60
L
0.85
1.15
S
2.40
2.80
All Dimension in mm
D
Source
Dim
* Power Management in Notebook Computer
* Protable Equipment
* Battery Powered System
G
Marking : 2305
S
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
-4.2
A
o
ID@TA=70 C
-3.4
A
IDM
-10
A
1.38
W
0.01
W / oC
PD@TA=25 C
Linear Derating Factor
Operating Junction and Storage Temperature Range
V
V
o
Total Power Dissipation
-20
±12
ID@TA=25 C
3
Unit
o
VGS
3
Ratings
Tj, Tstg
o
C
-55~+150
Thermal Data
Parameter
Thermal Resistance Junction-ambient
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Symbol
3
Rthj-a
Ratings
90
Unit
o
C /W
Any changing of specification will not be informed individual
Page 1 of 4
SMG2305
-4.2A, -20V,RDS(ON) 65mΩ
P-Channel Enhancement Mode Power Mos.FET
Elektronische Bauelemente
o
Electrical Characteristics( Tj=25 C
Parameter
Unless otherwise specified)
Symbol
BVDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
o
Drain-Source Leakage Current (Tj=70 C)
Static Drain-Source On-Resistance 2
-20
Typ.
Max.
Unit
_
_
V
Test Condition
VGS=0V, ID=-250uA
BVDS/ Tj
_
-0.1
_
V/
VGS(th)
-0.5
_
_
V
VDS=VGS, ID=-250uA
IGSS
_
_
±100
nA
VGS=± 12V
_
_
-1
uA
VDS=-20V,VGS=0
_
_
-10
uA
VDS=-16V,VGS=0
_
_
53
_
_
65
o
Drain-Source Leakage Current (Tj=25 C)
Min.
IDSS
RDS(ON)
o
Reference to 25 C ,ID=-1mA
VGS=-10V, ID=-4.5A
VGS=-4.5V, ID=-4.2A
mΩ
_
_
100
VGS=-2.5V, ID=-2A
_
_
250
VGS=-1.8V, ID=-1A
Qg
_
10.6
Gate-Source Charge
Qgs
_
2.32
_
Gate-Drain ("Miller") Charge
Qgd
_
3.68
_
5.9
_
3.6
_
Total Gate Charge
2
Turn-on Delay Time2
Rise Time
Td(ON)
Tr
Turn-off Delay Time
Fall Time
Input Capacitance
_
Td(Off)
_
Tf
_
2.6
_
740
Ciss
Output Capacitance
_
Coss
_
32.4
_
_
nC
ID=-4.2A
VDS=-16V
VGS=-4.5V
VDS=-15V
ID=-4.2A
nS
VGS=-10V
RG=6Ω
RD=3.6 Ω
_
_
167
_
126
_
pF
VGS=0V
VDS=-15V
VDS=-5V, ID=-2.8A
f=1.0MHz
Crss
_
Gfs
_
9
_
S
Symbol
Min.
Typ.
Max.
Unit
Test Condition
Forward On Voltage
VSD
_
_
-1.2
V
IS=-1.2A, VGS=0V.
Reverse Recovery Time
Trr
_
27.7
_
nS
Reverse Recovery Charge
Qrr
_
22
_
nC
Is=-4.2A,VGS=0V
dl/dt=100A/uS
Reverse Transfer Capacitance
Forward Transconductance
Source-Drain Diode
Parameter
2
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width≦300us, dutycycle≦2%.
3.Surface mounted on 1 inch2 copper pad of FR4 board; 270°C/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
SMG2305
Elektronische Bauelemente
-4.2A, -20V,RDS(ON) 65m Ω
P-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 3 of 4
SMG2305
Elektronische Bauelemente
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
-4.2A, -20V,RDS(ON) 65m Ω
P-Channel Enhancement Mode Power Mos.FET
Any changing of specification will not be informed individual
Page 4 of 4