SGM161 5.3A, 20V,RDS(ON)50mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOT-89 Description The SGM161 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. Features * Low On-Resistance * Capable Of 2.5V Gate Drive Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. * Reliable And Rugged A B C D E F Applications * Notebook PC REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5° TYP. 0.70 REF. D * Li-ion Battery Systems * On-Board Power Supplies * Cellular And Portable Phones G S Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current, [email protected] Continuous Drain Current, [email protected] Pulsed Drain Current 5.3 A o ID@TA=70 C 4.3 A IDM 10 A 2 W 0.01 W / oC -55~+150 o PD@TA=25 C Linear Derating Factor Tj, Tstg Operating Junction and Storage Temperature Range V V o Total Power Dissipation 20 ±12 ID@TA=25 C 3 Unit o VGS 3 Ratings C Thermal Data Parameter Thermal Resistance Junction-ambient http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Symbol 3 Max. Rthj-a Ratings 90 Unit o C /W Any changing of specification will not be informed individual Page 1 of 5 SGM161 5.3A, 20V,RDS(ON)50mΩ Elektronische Bauelemente o Electrical Characteristics( Tj=25 C Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current N-Channel Enhancement Mode Power Mos.FET Unless otherwise specified) Symbol Min. Typ. Max. Unit BVDSS 20 _ _ V BVDS/ Tj _ 0.1 _ V/ C VGS(th) 0.5 _ 1.2 V VDS=VGS, ID=250uA IGSS _ _ ±100 nA VGS=±12V _ _ 1 uA VDS=20V,VGS=0 _ _ 10 uA VDS=16V,VGS=0 _ _ 50 _ _ 70 _ _ 250 o Drain-Source Leakage Current (Tj=25 C) o Drain-Source Leakage Current (Tj=70 C) 2 Static Drain-Source On-Resistance IDSS RDS(ON) Total Gate Charge 2 Qg _ 8.7 _ Gate-Source Charge Qgs _ 1.5 _ Gate-Drain ("Miller") Charge Qgd _ 3.6 _ 6 _ 14 _ Td(ON) Turn-on Delay Time 2 Rise Time Tr Turn-off Delay Time Fall Time Input Capacitance _ _ Td(Off) _ Tf _ Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Forward Transconductance Gfs 18.4 2.8 _ _ 144 _ 111 _ 13 o Reference to 25 C, ID=1mA mΩ VGS=2.5V, ID=2A VGS=1.5V, ID=0.5A nC ID=5.3A VDS=10V VGS=4.5V VDD=15V ID=1A nS VGS=10V RG=2Ω RD=15 Ω _ 603 _ VGS=0V, ID=250uA VGS=4.5V, ID=2A _ _ _ o Test Condition _ pF VGS=0V VDS=15V S VDS=5V, ID=5.3A f=1.0MHz Source-Drain Diode Parameter Forward On Voltage 2 Reverse Recovery Time Reverse Recovery Charge Symbol Min. Typ. Max. Unit Test Condition VDS _ _ 1.2 V IS=1.2A, VGS=0V. Trr _ 16.8 _ nS 11 _ nC IS=5A,VGS=0 dl/dt=100A/us Qrr _ Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width≦300us, dutycycle≦2%. 3.Surface mounted on 1 inch2 copper pad of FR4 board; 270°C/W when mounted on min. copper pad. http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 5 SGM161 5.3A, 20V,RDS(ON)50mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Characteristics Curve http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 3 of 5 SGM161 5.3A, 20V,RDS(ON)50mΩ Elektronische Bauelemente http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A N-Channel Enhancement Mode Power Mos.FET Any changing of specification will not be informed individual Page 4 of 5 SGM161 5.3A, 20V,RDS(ON)50mΩ Elektronische Bauelemente http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A N-Channel Enhancement Mode Power Mos.FET Any changing of specification will not be informed individual Page 5 of 5