STT2605
-4.0A, -30V,RDS(ON) 80mΩ
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The STT2605 utiltzed advance processing techniques to achieve the lowest
possible on-resistance, extermely efficient and cost-effectiveness device.
The STT2605 is universally used for all commercial-industrial applications.
Features
* Fast Switching Characteristic
* Lower Gate Charge
* Small Footprint & Low Profile Package
D
D
D
S
6
5
4
REF.
2605
Date Code
A
A1
A2
c
D
E
E1
G
S
1
2
3
D
D
G
Absolute Maximum Ratings
Parameter
Millimeter
Min.
Max.
1.10 MAX.
0
0.10
0.70
1.00
0.12 REF.
2.70
3.10
2.60
3.00
1.40
1.80
REF.
L
L1
b
e
e1
Millimeter
Min.
Max.
0.45 REF.
0.60 REF.
0°
10°
0.30
0.50
0.95 REF.
1.90 REF.
Symbol
Ratings
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current, (Note 3)
ID@TA=25к
-4.0
A
Continuous Drain Current, (Note 3)
ID@TA=70к
-3.3
A
IDM
-20
A
PD@TA=25к
2.0
W
0.016
W /e
C
Tj, Tstg
-55~+150
e
C
Symbol
Ratings
Pulsed Drain Current (Note 1)
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Unit
Thermal Data
Parameter
Thermal Resistance Junction-ambient (Note 3)
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Rthj-a
62.5
Unit
e
C /W
Any changing of specification will not be informed individual
Page 1 of 4
STT2605
-4.0A, -30V,RDS(ON) 80mΩ
P-Channel Enhancement Mode Power Mos.FET
Elektronische Bauelemente
o
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Symbol
Min.
BVDSS
-30
BVDS/ Tj
VGS(th)
Gat Thershold Voltage
IGSS
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=55 oC)
StaticDrain-Source On-Resistance
2
IDSS
RDS(ON)
Total Gate Charge
Qg
Gate-Source Charge 2
Qgs
Gate-Drain ("Miller") Charge
Turn-on Delay Time 2
Qgd
Td(ON)
Rise Time
Tr
Td(Off)
Turn-off Delay Time
Fall Time
Tf
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Forward Transconductance
Gfs
_
-1.0
Typ.
Max.
Unit
_
_
V
-0.02
_
V/ C
-3.0
V
VDS=VGS, ID=-250uA
±100
nA
VGS=± 20V
-1
uA
VDS=-30V,VGS=0
-25
uA
VDS=-24V,VGS=0
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
5.5
1
2.6
7
6
18
4
400
90
30
6
80
o
mΩ
8.8
nC
_
_
nS
ID=-4.0A
VDS=-24V
VGS=-4.5V
VGS=-10V
RG=3.3Ω
RD=15 Ω
640
pF
VGS=0V
VDS=-25V
S
VDS=-5V, ID=-4.0A
_
_
VGS=-10V, ID=-4.0A
ID=-1A
_
_
Reference to 25 oC,ID=-1mA
VDD=-15V
_
_
VGS=0V, ID=-250uA
VGS=-4.5V, ID=-3.0A
120
_
Test Condition
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage
2
Reverse Recovery Time
Symbol
VDS
2
Reverse Recovery Charge
Trr
Qrr
Min.
_
_
_
Typ.
_
21
14
Max.
-1.2
_
_
Unit
V
Test Condition
IS=-1.6A, VGS=0V.
nS
Is=-4.0A, VGS=0V
nC
dl/dt=100A/us
Notes: 1.Pulse width limited by safe operating area.
2.Pulse width≦300us, dutycycle≦2%.
O
3.Surface mounted on 1 in2 copper pad of FR4 board; 156 C/W when mounted on Min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
STT2605
Elektronische Bauelemente
-4.0A -30V,RDS(ON) 80mΩ
P-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 3 of 4
STT2605
Elektronische Bauelemente
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
-4.0A, -30V,RDS(ON) 80mΩ
P-Channel Enhancement Mode Power Mos.FET
Fig 8. Typical Capacitance Characteristics
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
Page 4 of 4