BD135T / BD137T / BD139T NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are designed as Audio Amplifier and Drivers Utilizing. E C B • TO-126 Plastic Package Absolute Maximum Ratings (Ta=25 OC) Parameter Symbol Value BD135T BD137T BD139T Unit Collector Emitter Voltage VCEO 45 60 80 V Collector Emitter Voltage ( RBE = 1 KΩ) VCER 45 60 100 V Collector Base Voltage VCBO 45 60 100 V Emitter Base Voltage VEBO 5 V Collector Current - Continuous 1) Collector Current - Peak IC ICM 1.5 2 A Base Current - Continuous IB 0.5 A Total Power Dissipation @ TA=25 OC Derate above 25 OC PD 1.25 10 W mW/ OC Total Power Dissipation @ TC=25 OC Derate above 25 OC PD 12.5 100 W mW/ OC Total Power Dissipation @ TC=70 OC PD 8 W Operating and Storage Junction Temperature Range TJ, Ts -55 to +150 Thermal Resistance, Junction to Ambient RθJA 100 O Thermal Resistance, Junction to Case RθJC 10 O C O C/W C/W SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 22/03/2006 BD135T / BD137T / BD139T Characteristics at Ta=25 OC Parameter Symbol Min. Max. Unit at VCE = 2 V, IC = 5 mA hFE 25 - - at VCE = 2 V, IC = 500 mA hFE 25 - - -6 hFE 40 100 - -10 hFE 63 160 - -16 hFE 100 250 - -25 hFE 160 400 - DC Current Gain at VCE = 2 V, IC = 150 mA Collector Emitter Sustaining Voltage at IC = 30 mA BD135T VCEO(sus) 45 - V at IC=10mA BD137T VCEO(sus) 60 - V BD139T VCEO(sus) 80 - V ICBO - 0.1 µA IEBO - 10 µA VCE(sat) - 0.5 V VBE(on) - 1 V Collector Cutoff Current at VCB = 30 V Emitter Cutoff Current at VEB = 5 V Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Base Emitter On Voltage at IC = 500 mA, VCE = 2 V SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 22/03/2006