3VD156600YL 3VD156600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD156600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. ¾ Advanced termination scheme to provide enhanced voltage-blocking capability. ¾ Avalanche Energy Specified. ¾ Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode ¾ The chips may packaged in TO-92DT-3L type and the typical equivalent product is 1N60SS. CHIP TOPOGRAPHY ¾ The packaged product is widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. ¾ Die size: 1.6mm*1.54mm. ¾ Chip Thickness: 300±20μm. ¾ Top metal: Al, Backside Metal : Ag. ABSOLUTE MAXIMUM RATINGS (Tamb=25°C) Parameter Uni Symbol Ratings Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V Drain Current ID 500 mA Operation Junction Temperature TJ 150 °C Tstg -55-150 °C Storage Temperature t ELECTRICAL CHARACTERISTICS (Tamb=25°C) Parameter Drain-Source Breakdown Voltage Symbol Test conditions Min. Typ. Max. Unit V(BR)DSS VGS = 0V, ID=250μA 600 --- ---- V Vth(GS) ID=250μA ,VDS=VGS 2.0 --- 4.0 V Gate-Body Leakage lGSS VGS=±30V, VDS=0V --- --- ±100 nA Zero Gate Voltage Drain Current IDSS VDS=600V, VGS=0V --- --- 1.0 µA ID=0.5A, VGS=10V --- --- 13.5 Ω ID=0.8A,VGS=0V --- --- 1.0 V Gate-Threshold Voltage Drain-Source On-Resistance Source-Drain Diode Forward On Voltage RDS(on) VFSD HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2008.10.15 Page 1 of 1