ADPOW APTGF180SK60T

APTGF180SK60T
Buck chopper
NPT IGBT Power Module
VBUS
NTC2
VCES = 600V
IC = 180A @ Tc = 80°C
Application
· AC and DC motor control
· Switched Mode Power Supplies
Q1
Features
G1
·
E1
OUT
·
·
0/VBU S SENSE
0/VBU S
NTC1
·
·
0/VBUS
SENSE
VBUS
E1
G1
OUT
OUT
0/VBUS
NTC2
0/VBUS
SENSE
NTC1
Non Punch Through (NPT) THUNDERBOLT IGBT®
- Low voltage drop
- Low tail current
- Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
- Symmetrical design
- Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
Benefits
· Outstanding performance at high frequency
operation
· Stable temperature behavior
· Very rugged
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Solderable terminals both for power and signal for
easy PCB mounting
· Easy paralleling due to positive TC of VCEsat
· Low profile
Absolute maximum ratings
IC
ICM
VGE
PD
RBSOA
Parameter
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
Tc = 25°C
Tc = 80°C
Tc = 25°C
Tc = 25°C
Tj = 150°C
Max ratings
600
220
180
630
±20
833
630A @ 600V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-6
APTGF180SK60T – Rev 1 March, 2004
Symbol
VCES
APTGF180SK60T
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BVCES Collector - Emitter Breakdown Voltage
ICES
Zero Gate Voltage Collector Current
VCE(on)
Collector Emitter on Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
VGE = 0V, IC = 150µA
Tj = 25°C
VGE = 0V
VCE = 600V
Tj = 125°C
Tj = 25°C
VGE =15V
IC = 180A
Tj = 125°C
VGE = VCE, IC = 2mA
VGE = 20 V, VCE = 0V
Min
600
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Min
Typ
2.0
2.2
3
Max
150
3000
2.5
Unit
V
µA
V
5
±200
V
nA
Max
Unit
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
Td(on)
Tr
Td(off)
Tf
Eon
Eoff
Td(on)
Tr
Td(off)
Tf
Eon
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Emitter Charge
Gate – Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy u
Turn-off Switching Energy v
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy u
Eoff
Turn-off Switching Energy v
VGS = 15V
VBus = 300V
IC = 180A
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 180A
RG = 2.5 W
Inductive Switching (125°C)
VGE = 15V
VBus = 400V
IC = 180A
RG = 2.5 W
Typ
8.6
0.94
0.8
660
580
400
26
25
150
30
6.74
5.74
26
25
170
40
8.6
nF
nC
ns
mJ
ns
mJ
7
Reverse diode ratings and characteristics
VF
Reverse Recovery Time
Qrr
Reverse Recovery Charge
50% duty cycle
IF = 200A
IF = 400A
IF = 200A
IF = 200A
VR = 400V
di/dt =400A/µs
IF = 200A
VR = 400V
di/dt =400A/µs
Diode Forward Voltage
trr
Test Conditions
Min
Tj = 125°C
Typ
200
1.6
1.9
1.4
Tj = 25°C
180
Tj = 125°C
220
Tj = 25°C
780
Tj = 125°C
2900
Tc = 80°C
Max
Unit
A
1.8
V
ns
nC
u Eon includes diode reverse recovery
v In accordance with JEDEC standard JESD24-1
APT website – http://www.advancedpower.com
2-6
APTGF180SK60T – Rev 1 March, 2004
Symbol Characteristic
Maximum Average Forward Current
IF(AV)
APTGF180SK60T
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Min
Typ
IGBT
Diode
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
To Heatsink
Package Weight
Max
0.15
0.32
2500
Unit
°C/W
V
-40
-40
-40
150
125
100
4.7
160
M5
°C
N.m
g
Temperature sensor NTC
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.16 K
RT =
Min
Typ
68
4080
Max
Unit
kW
K
R25
T: Thermistor temperature
é
æ 1 1 öù RT: Thermistor value at T
expê B25 / 85 çç
- ÷÷ú
è T25 T øû
ë
APT website – http://www.advancedpower.com
3-6
APTGF180SK60T – Rev 1 March, 2004
Package outline
APTGF180SK60T
Typical Performance Curve
Output characteristics (VGE=15V)
Output Characteristics (VGE=10V)
TJ=-55°C
250µs Pulse Test
< 0.5% Duty cycle
500
600
TJ=25°C
Ic, Collector Current (A)
400
300
TJ=125°C
200
100
250µs Pulse Test
< 0.5% Duty cycle
500
400
TJ=25°C
300
200
TJ=125°C
100
0
0
0
1
2
3
0
4
VCE, Collector to Emitter Voltage (V)
1
2
3
VCE, Collector to Emitter Voltage (V)
Transfer Characteristics
VGE, Gate to Emitter Voltage (V)
250µs Pulse Test
< 0.5% Duty cycle
500
400
300
200
TJ=125°C
100
TJ=25°C
TJ=-55°C
0
VCE, Collector to Emitter Voltage (V)
0
1
2 3 4 5 6 7 8 9
VGE, Gate to Emitter Voltage (V)
6
Ic=360A
5
4
3
Ic=180A
2
Ic=90A
1
0
6
8
10
12
14
14
VCE=120V
VCE=300V
12
10
VCE=480V
8
6
4
2
0
0
100
200
300
400
500
600
700
Gate Charge (nC)
On state Voltage vs Gate to Emitter Volt.
TJ = 25°C
250µs Pulse Test
< 0.5% Duty cycle
IC = 180A
TJ = 25°C
16
10
8
7
4
Gate Charge
18
VCE, Collector to Emitter Voltage (V)
Ic, Collector Current (A)
600
On state Voltage vs Junction Temperature
4
3.5
Ic=360A
3
2.5
Ic=180A
2
1.5
Ic=90A
1
0.5
250µs Pulse Test
< 0.5% Duty cycle
V GE = 15V
0
16
-50
VGE, Gate to Emitter Voltage (V)
Breakdown Voltage vs Junction Temp.
-25
0
25
50
75
100
TJ, Junction Temperature (°C)
125
DC Collector Current vs Case Temperature
320
1.20
Ic, DC Collector Current (A)
Collector to Emitter Breakdown
Voltage (Normalized)
TJ=-55°C
1.10
1.00
0.90
0.80
0.70
-50
-25
0
25
50
75
100 125
TJ, Junction Temperature (°C)
240
160
80
0
-50
-25
0
25 50 75 100 125 150
TC, Case Temperature (°C)
APT website – http://www.advancedpower.com
4-6
APTGF180SK60T – Rev 1 March, 2004
Ic, Collector Current (A)
600
APTGF180SK60T
Turn-Off Delay Time vs Collector Current
td(off), Turn-Off Delay Time (ns)
30
VGE = 15V
25
Tj = 25°C
VCE = 400V
RG = 2.5Ω
20
15
50
100
150
200
250
250
VGE=15V,
TJ=125°C
200
150
100
VCE = 400V
RG = 2.5Ω
50
300
50
ICE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
250
300
60
VCE = 400V, VGE = 15V, RG = 2.5Ω
tf, Fall Time (ns)
tr, Rise Time (ns)
200
Current Fall Time vs Collector Current
VCE = 400V
RG = 2.5Ω
VGE=15V,
TJ=125°C
40
20
60
TJ = 125°C
40
TJ = 25°C
20
0
50
100
150
200
250
ICE, Collector to Emitter Current (A)
50
300
Eoff, Turn-off Energy Loss (mJ)
TJ=125°C,
VGE=15V
8
TJ=25°C,
VGE=15V
4
0
50
100
150
200
250
VCE = 400V
VGE = 15V
RG = 2.5Ω
10
8
4
2
0
300
50
Switching Energy Losses (mJ)
24
Eoff, 360A
Eoff, 180A
16
Eon, 180A
Eoff, 90A
8
Eon, 90A
0
0
5
10
15
20
Gate Resistance (Ohms)
25
100
150
200
250
ICE, Collector to Emitter Current (A)
300
Switching Energy Losses vs Junction Temp.
Switching Energy Losses vs Gate Resistance
Eon, 360A
TJ = 125°C
TJ = 25°C
6
ICE, Collector to Emitter Current (A)
VCE = 400V
VGE = 15V
TJ = 125°C
300
12
VCE = 400V
RG = 2.5Ω
12
100
150
200
250
I CE, Collector to Emitter Current (A)
Turn-Off Energy Loss vs Collector Current
Turn-On Energy Loss vs Collector Current
16
Eon, Turn-On Energy Loss (mJ)
150
80
0
Switching Energy Losses (mJ)
100
ICE, Collector to Emitter Current (A)
80
32
VGE=15V,
TJ=25°C
20
VCE = 400V
VGE = 15V
RG = 2.5Ω
16
Eon, 360A
Eoff, 360A
12
Eon, 180A
8
Eoff, 180A
4
Eoff, 90A
Eon, 90A
0
0
25
50
75
100
TJ, Junction Temperature (°C)
APT website – http://www.advancedpower.com
125
5-6
APTGF180SK60T – Rev 1 March, 2004
td(on), Turn-On Delay Time (ns)
Turn-On Delay Time vs Collector Current
35
APTGF180SK60T
Capacitance vs Collector to Emitter Voltage
Minimum Switching Safe Operating Area
700
IC, Collector Current (A)
C, Capacitance (pF)
100000
Cies
10000
Coes
1000
Cres
600
500
400
300
200
100
0
100
0
10
20
30
40
50
0
200
400
600
800
VCE, Collector to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.16
0.14
0.12
0.9
0.35
0.1
0.08
0.06
0.25
0.15
0.04
0.02
0.05
0.025
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
Rectangular Pulse Duration (Seconds)
1
10
VCE = 400V
D = 50%
RG = 2.5Ω
TJ = 125°C
80
60
40
20
0
40
80
120
160
200
IC, Collector Current (A)
240
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
6-6
APTGF180SK60T – Rev 1 March, 2004
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
100