APTGT200A60T Phase leg Trench + Field Stop IGBT® Power Module Q1 G1 E1 OUT Q2 G2 E2 0/VBU S NT C1 G2 OUT E2 VBUS OUT 0/VBUS E1 E2 NTC2 G1 G2 NTC1 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration • Internal thermistor for temperature monitoring Benefits • Stable temperature behavior • Very rugged • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 600 290 200 400 ±20 625 Tj = 150°C 400A @ 550V TC = 25°C TC = 80°C TC = 25°C Unit V A V W May, 2005 NT C2 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-5 APTGT200A60T – Rev 0 VBUS VCES = 600V IC = 200A @ Tc = 80°C APTGT200A60T All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 200A Tj = 150°C VGE = VCE , IC = 2 mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz 5.0 Min Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 200A R G = 5Ω Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 200A R G = 5Ω Test Conditions Maximum Reverse Leakage Current VR=600V IF(A V) Maximum Average Forward Current 50% duty cycle VF Diode Forward Voltage IF = 200A VGE = 0V trr Reverse Recovery Time IF = 200A VR = 300V Qrr Reverse Recovery Charge di/dt =2200A/µs 1.5 1.7 5.8 Typ 12.3 0.8 0.4 115 45 225 Max Unit 250 1.9 µA 6.5 400 V nA Max Unit V nF ns 55 130 50 300 ns 70 3.5 7 Min 600 Typ Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C 200 1.6 1.5 130 225 9 Tj = 150°C 19 mJ Max 250 500 Unit V µA A 2 V ns µC May, 2005 IRM Typ APT website – http://www.advancedpower.com 2-5 APTGT200A60T – Rev 0 Symbol Cies Coes Cres Td(on) Tr Td(off) Min APTGT200A60T Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = R 25 Max Unit kΩ K Min Typ Max 0.24 0.4 Unit T: Thermistor temperature Symbol Characteristic VISOL TJ TSTG TC Torque Wt Typ 50 3952 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T Thermal and package characteristics RthJC Min IGBT Diode Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink M5 2500 -40 -40 -40 1.5 °C/W V 175 125 100 4.7 160 °C N.m g APT website – http://www.advancedpower.com 3-5 APTGT200A60T – Rev 0 May, 2005 Package outline (dimensions in mm) APTGT200A60T Typical Performance Curve Output Characteristics (VGE =15V) 400 TJ=25°C 350 300 300 T J=125°C 250 TJ=150°C 200 VGE=13V 250 VGE=15V 200 150 150 100 100 VGE =9V 50 50 T J=25°C 0 0 0.5 1 1.5 VCE (V) 0 2 2.5 0 3 0.5 1 2.5 3 3.5 14 350 VCE = 300V VGE = 15V RG = 5Ω TJ = 150°C 12 T J=25°C 300 10 E (mJ) 250 200 T J=125°C 150 Eoff Eon 8 6 4 100 TJ =150°C T J=25°C 0 5 6 Er 2 50 7 8 9 Eon 0 10 11 0 12 50 100 150 200 250 300 350 400 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance V CE = 300V V GE =15V I C = 200A T J = 150°C 20 16 Reverse Bias Safe Operating Area 500 Eon 400 IC (A) 24 E (mJ) 1.5 2 VCE (V) Energy losses vs Collector Current Transfert Characteristics 400 IC (A) VGE =19V T J = 150°C 350 IC (A) IC (A) Output Characteristics 400 Eoff 12 Eoff 300 200 8 Eon 4 VGE =15V T J=150°C RG=5Ω 100 Er 0 0 0 5 10 15 20 25 30 Gate Resistance (ohms) 35 0 100 200 300 400 V CE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.15 0.9 IGBT 0.7 0.5 0.1 0.3 0.05 0.1 0.05 0 0.00001 May, 2005 0.2 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds APT website – http://www.advancedpower.com 4-5 APTGT200A60T – Rev 0 Thermal Impedance (°C/W) 0.25 APTGT200A60T Forward Characteristic of diode 400 100 ZCS 80 VCE=300V D=50% RG=5Ω TJ =150°C 350 300 250 Tc=85°C ZVS IC (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 120 60 200 TJ=125°C 150 40 Hard switching 20 TJ =150°C 100 50 T J=25°C 0 0 0 50 100 150 IC (A) 200 0 250 0.4 0.8 1.2 1.6 VF (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration Thermal Impedance (°C/W) 0.45 0.4 Diode 0.9 0.35 0.3 0.25 0.7 0.5 0.2 0.15 0.1 0.05 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 5-5 APTGT200A60T – Rev 0 May, 2005 Rectangular Pulse Duration in Seconds