APTM50DAM38CT Boost chopper VDSS = 500V RDSon = 38mW max @ Tj = 25°C ID = 90A @ Tc = 25°C SiC FWD diode MOSFET Power Module NTC2 VBUS SENSE CR1 Application · AC and DC motor control · Switched Mode Power Supplies · Power Factor Correction Features · Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated OUT Q2 G2 · FWD SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF · · Kelvin source for easy drive Very low stray inductance² - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration S2 0/VBU S NTC1 G2 S2 VBUS VBUS SENSE 0/VBUS OUT S2 NTC2 G2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS · · OUT Benefits · Outstanding performance at high frequency operation · Direct mounting to heatsink (isolated package) · Low junction to case thermal resistance · Solderable terminals both for power and signal for easy PCB mounting · Low profile Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 500 90 67 360 ±30 38 694 46 50 2500 Unit V A V mW W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–7 APTM50DAM38CT – Rev 1 May, 2004 VBUS APTM50DAM38CT All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V, ID = 375µA Min 500 VGS = 0V,VDS = 500V Tj = 25°C VGS = 0V,VDS = 400V Tj = 125°C VGS = 10V, ID = 45A VGS = VDS, ID = 5mA VGS = ±30 V, VDS = 0V Typ 3 Max Unit V 150 750 38 5 ±150 mW V nA Max Unit µA Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Test Conditions VGS = 0V VDS = 25V f = 1MHz Min VGS = 10V VBus = 250V ID = 90A Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy u Eon Turn-on Switching Energy Eoff Turn-off Switching Energy u nF nC 66 130 18 Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 90A RG = 2W Rise Time Typ 11.2 2.36 0.18 246 35 ns 87 77 Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 90A, RG = 2Ω 906 µJ 1452 Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 90A, RG = 2Ω 1490 µJ 1692 u In accordance with JEDEC standard JESD24-1. Diode ratings and characteristics Test Conditions 50% duty cycle Min Tc = 125°C Tj = 25°C Tj = 175°C Typ 60 1.6 2.0 VF Diode Forward Voltage IF = 60A QC Total Capacitive Charge IF = 60A, VR = 300V di/dt =1600A/µs 84 Q Total Capacitance f = 1MHz, VR = 200V 390 f = 1MHz, VR = 400V 300 APT website – http://www.advancedpower.com Max 1.8 2.4 Unit A V nC pF 2–7 APTM50DAM38CT – Rev 1 May, 2004 Symbol Characteristic Maximum Average Forward Current IF(AV) APTM50DAM38CT Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Typ Transistor Diode Junction to Case RMS Isolation Voltage, any terminal to case t =1 min,I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink 2500 -40 -40 -40 Max 0.18 0.45 Unit °C/W V 150 125 100 4.7 160 M5 °C N.m g Temperature sensor NTC Symbol Characteristic Resistance @ 25°C R25 B 25/85 T25 = 298.16 K RT = Min Typ 68 4080 Max Unit kW K R 25 é æ 1 1 öù T: Thermistor temperature - ÷÷ú RT: Thermistor value at T exp ê B25 / 85 çç è T25 T øû ë APT website – http://www.advancedpower.com 3–7 APTM50DAM38CT – Rev 1 May, 2004 Package outline APTM50DAM38CT Typical MOSFET Performance Curve 0.9 0.16 0.14 0.7 0.12 0.5 0.1 0.08 0.3 0.06 0.04 0.1 0.02 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 300 8V VGS=10&15V 250 ID, Drain Current (A) ID, Drain Current (A) 10 250 350 7.5V 200 7V 150 6.5V 100 6V 50 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 200 150 100 TJ=25°C 50 TJ=125°C 5.5V 0 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 RDS(on) vs Drain Current 1.20 Normalized to VGS=10V @ 45A 1.15 VGS=10V 1.10 1.05 TJ=-55°C 1 2 3 4 5 6 7 VGS, Gate to Source Voltage (V) 8 DC Drain Current vs Case Temperature 100 ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance 1 VGS=20V 1.00 0.95 0.90 0.85 0.80 80 60 40 20 0 0 50 100 150 ID, Drain Current (A) 200 25 50 75 100 125 TC, Case Temperature (°C) APT website – http://www.advancedpower.com 150 4–7 APTM50DAM38CT – Rev 1 May, 2004 Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.2 0.18 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS=10V ID=45A 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 1.1 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 1000 1.2 1.0 0.9 0.8 0.7 0.6 limited by RDSon 100 limited by RDSon 100µs 10 1ms 10ms Single pulse TJ=150°C 100ms 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 Ciss C, Capacitance (pF) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) 10000 Coss 1000 Crss 100 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 VCE=100V ID=90A 12 T =25°C J V =250V CE 10 VCE=400V 8 6 4 2 0 0 40 APT website – http://www.advancedpower.com 80 120 160 200 240 280 320 Gate Charge (nC) 5–7 APTM50DAM38CT – Rev 1 May, 2004 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTM50DAM38CT APTM50DAM38CT Delay Times vs Current Rise and Fall times vs Current 120 td(off) 80 40 VDS=333V RG=2Ω TJ=125°C L=100µH td(on) 20 80 60 40 tr 20 0 0 20 40 60 80 100 120 140 20 40 60 ID, Drain Current (A) VDS=333V RG=2Ω TJ=125°C L=100µH 3 Eoff 2 100 120 140 Switching Energy vs Gate Resistance 8 Switching Energy (mJ) Switching Energy (mJ) 4 80 ID, Drain Current (A) Switching Energy vs Current Eon 1 VDS=333V ID=90A TJ=125°C L=100µH 7 6 5 Eoff 4 3 2 Eon 1 0 0 20 40 60 80 100 120 0 140 ID, Drain Current (A) Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) VDS=333V D=50% RG=2Ω TJ=125°C 350 300 250 200 150 100 50 0 20 30 40 50 60 ID, Drain Current (A) 5 10 15 20 25 Gate Resistance (Ohms) 400 Frequency (kHz) tf 70 80 1000 100 Source to Drain Diode Forward Voltage TJ=150°C 10 TJ=25°C 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) APT website – http://www.advancedpower.com 6–7 APTM50DAM38CT – Rev 1 May, 2004 60 VDS=333V RG=2Ω TJ=125°C L=100µH 100 tr and tf (ns) td(on) and td(off) (ns) 100 APTM50DAM38CT Thermal Impedance (°C/W) Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 0.45 0.9 0.4 0.35 0.7 0.3 0.5 0.25 0.2 0.3 0.15 0.1 0.1 0.05 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) 1200 TJ=25°C 90 TJ=75°C IR Reverse Current (µA) IF Forward Current (A) Reverse Characteristics Forward Characteristics 120 TJ=175°C 60 TJ=125°C 30 0 0 0.5 1 1.5 2 2.5 3 3.5 VF Forward Voltage (V) TJ=175°C 1000 800 TJ=125°C 600 TJ=75°C 400 TJ=25°C 200 0 200 300 400 500 600 700 VR Reverse Voltage (V) 800 Capacitance vs.Reverse Voltage C, Capacitance (pF) 2500 2000 1500 1000 500 0 10 100 VR Reverse Voltage 1000 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 7–7 APTM50DAM38CT – Rev 1 May, 2004 1