Common Source Push-Pull Pair ARF475FL D G S S G RF POWER MOSFET S S D N - CHANNEL ENHANCEMENT MODE 165V 300W 150MHz The ARF475FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz. • Specified 150 Volt, 128 MHz Characteristics: • Output Power = 900 Watts Peak • Gain = 15dB (Class AB) • Efficiency = 50% min • High Performance Push-Pull RF Package. • High Voltage Breakdown and Large SOA for Superior Ruggedness. • Low Thermal Resistance. MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter ARF475FL VDSS Drain-Source Voltage 500 VDGO Drain-Gate Voltage 500 ID VGS PD TJ,TSTG TL UNIT Volts 10 Amps Gate-Source Voltage ±30 Volts Total Device Dissipation @ TC = 25°C 483 Watts Continuous Drain Current @ TC = 25°C (each device) -55 to 175 Operating and Storage Junction Temperature Range °C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS (each device) Characteristic / Test Conditions MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) 500 VDS(ON) On State Drain Voltage Symbol IDSS 1 (I D(ON) = 5A, VGS = 10V) TYP MAX 2.9 4 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25 Zero Gate Voltage Drain Current (VDS = 50V, VGS = 0, TC = 125°C) 250 IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) g fs Forward Transconductance (VDS = 15V, ID = 5A) 3 g fs1 g fs2 Forward Transconductance Match Ratio (V = 15V, I = 5A) / DS D 0.9 VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 200mA) ∆VGS(TH) Gate Threshold Voltage Match (VDS = VGS, ID = 200mA) ±100 2 3.6 UNIT Volts µA nA mhos 1.1 3.3 4 0.2 Volts THERMAL CHARACTERISTICS Characteristic RθJC Junction to Case RθCS Case to Sink MIN TYP MAX 0.31 (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) 0.1 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT °C/W 050-4929 A 2-2006 Symbol DYNAMIC CHARACTERISTICS (per section) Symbol ARF475FL Test Conditions Characteristic MIN TYP MAX 780 900 VDS = 50V 125 150 f = 1MHz 7 10 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-on Delay Time VGS = 15V 5.1 10 Rise Time VDD = 250V 4.1 8 ID = ID[Cont.] @ 25°C 12 18 RG = 1.6 Ω 4.0 7 MIN TYP MAX 14 16 dB 50 55 % tr td(off) tf VGS = 0V Turn-off Delay Time Fall Time FUNCTIONAL CHARACTERISTICS Symbol GPS Characteristic Test Conditions Common Source Amplifier Power Gain η Drain Efficiency ψ Electrical Ruggedness VSWR 5:1 f = 128 MHz Idq = 15mA VDD = 150V Pout = 900W PW = 3ms 10% duty cycle Per transistor section unless otherwise specified. 3000 12V 25 10V 20 9V 15 8V 10 500 Coss 100 50 Crss 10 7V 5 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 1, Typical Output Characteristics 1 .1 1 10 100 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 30 1.10 VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @ <0.5 % DUTY CYCLE TJ = -55°C 20 TJ = +25°C 15 10 TJ = -55°C VGS(th), THRESHOLD VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) Ciss 1000 11V CAPACITANCE (pf) ID, DRAIN CURRENT (AMPERES) 30 5 1.05 1.00 0.95 TJ = +125°C 0 ns 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics 0.90 -50 -25 UNIT No Degradation in Output Power APT Reserves the right to change, without notice, the specifications and information contained herein. 25 pF (Push-Pull Configuration) 1 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%. 050-4929 A 2-2006 UNIT 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) Figure 4, Typical Threshold Voltage vs Temperature ARF475FL 0.35 0.30 D = 0.9 0.25 0.7 0.20 0.5 0.15 0.3 t2 SINGLE PULSE 0.05 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.1 0.05 10-5 t1 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 5a, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION RC MODEL Junction temp. (°C) 0.142 0.00719 0.169 0.0856 Power (watts) Case temperature. (°C) Figure 5b, TRANSIENT THERMAL IMPEDANCE MODEL Table 1 - Typical Series Equivalent Large Signal Input - Output Impedance Freq. (MHz) 30 60 90 120 150 Zin (Ω) gate to gate 5.2 -j10 1.37 -j5.2 .53 -j2.6 .25 -j1.0 .25 +j0.2 ZOL (Ω) drain - drain 41 -j20 26 -j25 16 -j23 10 -j20 6.7 -j17 Zin - Gate -gate shunted with 25Ω IDQ = 15mA each side ZOL - Conjugate of optimum load for 600 Watts peak output at Vdd = 150V 25% duty cycle and PW = 5ms 050-4929 A 2-2006 0.10 0 PDM Note: ARF475FL 128MHz Test amplifier + Po = 900W @150V 3ms pulse 10% Duty Cycle Vg1 C6 L2 R3 T1 C5 T2 TL5 C3 L1 C2 C1 T3 TL1 C7 C10 C11 TL3 R1 J1 + Vdd - L3 J2 C8 TL2 C4 R2 C1 25pF poly trimmer C2 750pF ATC 700B C3-4 2200pF NPO 500V chip C5-10 10nF 500V chip C11 1000uF 250V electroytic L1 30nH 1.5t #18 enam .375" dia L2 680nH 12t #24 enam .312" dia L3 2t #20 on Fair-Rite 2643006302 bead, ~ 2uH R4 TL4 C9 TL6 DUT Vg2 R1-2 3.1Ω : 3 parallel 22Ω 1W 2512 SMT R3-4 2.2kΩ 1/4W axial T1 1:1 balun 50Ω coax on Fair-Rite 2843000102 core T2 4:1 25Ω coax on 2843000102 Fair-Rite balun core T3 1:1 coax balun RG-303 on 2861006802 Fair-Rite core TL1-2 Printed line L= 0.75" w =.23" TL3-6 Printed line L= 0.65" w =.23" 0.23" wide stripline on FR-4 board is ~ 30Ω Zo Peak Output Power vs. Vdd and Duty Cycle 1.2 900 800 1 Max Duty Cycle 700 0.8 600 500 0.6 Po Watts 400 300 0.4 200 Notes: The value of L1 must be adjusted as the supply voltage is changed to maintain resonance in the output circuit. At 128MHz its value changes from approximately 40nH at 100V to 30nH at 150V. With the 50Ω drain-to-drain load, the duty cycle above 100V must be reduced to insure power dissipation is within the limits of the device. Maximum pulse length should be 100mS or less. See transient thermal impedance, figure 5. 0.2 100 0 100 120 140 .100 0 80 .050 160 .050 Drain Supply Voltage Vdd .125R 4 pls S D1 D2 S .325 .125dia 4 pls Thermal Considerations and Package Mounting: .570 ARF475 G1 G2 S .225 .225 .150 1.250 S The package design clamps the ceramic base to the heatsink. A clamped joint maintains the required mounting pressure while allowing for thermal expansion of both the base and the heat sink. Four 4-40 (M3) screws provide the required mounting force. T = 6 in-lb (0.68N-m). 050-4929 A 2-2006 .320 .150 The rated power dissipation is only available when the package mounting surface is at 25°C and the junction temperature is 175°C . The thermal resistance between junctions and case mounting surface is 0.3°C/W. When installed, an additional thermal impedance of 0.1°C/W between the package base and the mounting surface is typical. Insure that the mounting surface is smooth and flat. Thermal joint compound must be used to reduce the effects of small surface irregularities. Use the minimum amount necessary to coat the surface. The heatsink should incorporate a copper heat spreader to obtain best results. .200 .300 .005 .040 1.500 HAZARDOUS MATERIAL WARNING The white ceramic portion of the device between leads and mounting surface is beryllium oxide, BeO. Beryllium oxide dust is toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area. These devices must never be thrown away with general industrial or domestic waste. APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 and foreign patents. US and Foreign patents pending. All Rights Reserved.