ANADIGICS AWT6166RM15P8

AWT6166R
GSM850/GSM900/DCS/PCS
Quad Band Power Amplifier Module
With Integrated Power Control
Data Sheet - Rev 2.0
FEATURES
•
•
•
•
Integrated Vreg (regulated supply)
Harmonic Performance ≤ -20 dBm
High Efficiency (PAE) at Pmax:
-GSM850, 53%
-GSM900, 55%
-DCS, 53%
-PCS, 53%
+35 dBm GSM850/900 Output Power at 3.5 V
•
+33 dBm DCS/PCS Output Power at 3.5 V
•
55 dB Dynamic Range
•
GPRS Class 12 Capable
•
RoHS Compliant Package, 250°C MSL-3
M15 Package
18 Pin 6 mm x 6 mm x 1.3 mm
Amplifier Module
APPLICATIONS
•
Dual/Tri/Quad Band Handsets & PDAs
PRODUCT DESCRIPTION
As with previous generations, the AWT6166R
integrated CMOS power control scheme simplifies
the design of the transmitter by eliminating the need
for external power control circuitry.
reducing the number of external components
required in the final application. Both PA die,
GSM850/900 and DCS/PCS, are fabricated using
state of the art InGaP HBT technology, known for it is
proven reliability and temperature stability.
The AWT6166R input and output terminals are
internal matched to 50 ohms and DC blocked,
VCC2
DCS/PCSIN
BS
TX
MATCH
MATCH
DCS/PCSOUT
CMOS BIAS/Integrated Power Control
EN
VCC_OUT
VBATT
H(s)
CEXT
VRAMP
GSM850/900IN
MATCH
MATCH
VCC2
Figure 1: Block Diagram
02/2006
GSM850/900OUT
AWT6166R
BS
GND
1
VCC2
DCS/PCS_IN
18
17
16
DCS/PCS_OUT
2
15
GND
TX_EN
3
14
GND
VBATT
4
13
VCC_OUT
CEXT
5
12
GND
VRAMP
6
11
GND
GSM_IN
7
10
GSM_OUT
9
VCC 2
GND
8
Figure 2: Pinout (X- ray Top View)
Table 1: Pin Description
PIN
1
2
NAME
DESCRIPTION
PIN
NAME
10
GSM_OUT
Band Select Logic Input
11
GND
Ground
TX Enable Logic Input
12
GND
Ground
DCS/PCS_IN DCS/PCS RF Input
DESCRIPTION
GSM850/900 RF Output
2
BS
3
Tx_EN
4
VBATT
Battery Supply
Connection
13
VCC_OUT
5
C EXT
Bypass
14
GND
Ground
6
VRAMP
Analog Signal used to
control the output power
15
GND
Ground
7
GSM_IN
GSM850/900 RF Input
16
8
VCC2
VCC Control Input for
GSM850/900
Pre-amplifier
17
GND
Ground
9
GND
Ground
18
VCC2
VCC Control Input for
DCS/PCS
Pre-amplifier
Control Voltage Output
which must be connected
to VCC2
DCS/PCS_OUT DCS/PCS RF Output
Data Sheet - Rev 2.0
02/2006
AWT6166R
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER
MIN
MAX
UNIT
Supply Voltage (VBATT)
-
+7
V
RF Input Power (RFIN)
-
11
dB m
Control Voltages (VRAMP)
-0.3
1.8
V
Storage Temperature (TSTG)
- 55
150
°C
Stresses in excess of the absolute ratings may cause
permanent damage. Functional operation is not implied under
these conditions. Exposure to absolute ratings for extended
periods of time may adversely affect reliability.
Table 3: Digital Inputs
PARAMETER
MIN
TYP
MAX
UNIT
Logic High Voltage (VIH)
1.2
-
3.0
V
Logic Low Voltage (VIL)
-
-
0.5
V
Logic High Current (IIH)
-
-
30
µA
Logic Low Current (IIL)
-
-
30
µA
Table 4: Control Logic Table
MODE
T x_E N
BS
PA Enable
HIGH
X
GSM850/900 Mode
HIGH
LOW
DCS/PCS Mode
HIGH
HIGH
PA Disable
LOW
X
Data Sheet - Rev 2.0
02/2006
3
AWT6166R
VCC2
>+2500 V
<-2500 V
GND
18
17
16
DCS/PCS_OUT
>+2500 V <-2500 V
2
15
GND
TX_EN
>+2500 V <-2500 V
3
14
GND
VBATT
>+2500 V <-2500 V
4
13
VCC_OUT
>+2500 V <-2500 V
CEXT
>+2500 V <-2500 V
5
12
GND
VRAMP
>+2500 V <-2500 V
6
11
GND
GSM_IN
>+2500 V <-2500 V
7
10
GSM_OUT
>+2500 V <-2500 V
DCS/PCS_IN
>+2500 V <-2500 V
1
BS
>+2500 V <-2500 V
GND
8
9
VCC2
>+2500 V
<-2500 V
GND
Figure 3: ESD Pin Rating
ELECTROSTATIC DISCHARGE SENSITIVITY
The AWT6166R part was tested to determine the
ESD sensitivity of each package pin with respect to
ground. All the package pins were subjected to an
ESD pulse event using the Human Body Model
outlined in MIL-STD-883E Method 3015.7 in either
4
polarity with respect to ground. The pre and post
test I-V characteristics of each pin are recorded. The
ratings on each pin require that it sustain the ESD
event and show no degradation.
Data Sheet - Rev 2.0
02/2006
AWT6166R
Table 5: Operating Ranges
PARAMETER
MIN
TYP
MAX
UNIT
Case Temperature (TC)
-20
-
85
°C
Supply Voltage (VBATT)
3.0
3.5
4.8
V
Power Supply Leakage Current
COMMENTS
VBATT = 4.8 V,
VRAMP = 0 V,
TX_EN = LOW,
No RF applied
-
1
10
µA
0.2
-
1.6
V
Turn on time (TON)
-
-
1
µs
VRAMP = 0.2 V, TX_EN =
LOW → High
PIN = 5 dBm
Turn off time (TOFF)
-
-
1
µs
VRAMP = 0.2 V, TX_EN =
HIGH → LOW
PIN = 5 dBm
Rise Time (TRISE)
-
-
1
µs
POUT = -10 dBm →PMAX
(within 0.2 dB)
Fall Time (TFALL)
-
-
1
µs
POUT = PMAX→ -10 dBm
(within 0.2 dB)
VRAMP Input Capacitance
-
3
-
pF
VRAMP Input Current
-
-
10
µA
Duty Cycle
-
-
50
%
Control Voltage Range
The device may be operated safely over these conditions; however, parametric performance is
guaranteed only over the conditions defined in the electrical specifications.
Data Sheet - Rev 2.0
02/2006
5
AWT6166R
Table 6: Electrical Characteristics for GSM850
Unless otherwise stated (VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty 25%,
ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGH)
PARAMETER
MIN
TYP
MAX
UNIT
Operating Frequency (FO)
824
-
849
MHz
0
3.0
5
dB m
Output Power, PMAX
34.5
35.0
-
dB m
Freq = 824 to 849 MHz
Degraded Output Power
32.5
33.5
-
dB m
VBATT = 3.0 V, TC = 85 °C,
PIN = 0 dBm
48
53
-
%
Forward Isolation 1
-
-40
-35
dB m
TX_EN = LOW, VRAMP = 0.2 V
PIN = 5 dBm
Forward Isolation 2
-
-25
-20
dB m
TX_EN = HIGH, VRAMP = 0.2 V,
PIN = 5 dBm
Cross Isolation
(Coupling of GSM 2fo and 3fo to
DCS/PCS port)
-
-26
-18
dB m
POUT ≤ 34.5 dBm
-
-27
-30
-10
-10
dB m
POUT ≤ 34.5 dBm
Input Power
PAE @ PMAX
Harmonics
2fo, 3fo
n*FO, (n ≥ 4), FO ≤ 12.75 GHz
COMMENTS
Freq = 824 to 849 MHz
VSWR = 8:1 All Phases, POUT ≤ 34.5 dBm
Stability
Ruggedness
6
-
-
-36
dB m
FOUT < 1 GHz
-
-
-30
dB m
FOUT > 1 GHz
-
-
10:1
VSWR
RX Noise Power
-
-87
-83
dB m
Input VSWR
-
1.5:1
2.5:1
-
Data Sheet - Rev 2.0
02/2006
All load phases,
POUT ≤ 34.5 dBm
FTX = 849 MHz,
RBW = 100 kHz,
FRX = 869 to 894 MHz,
POUT ≤ 34.5 dBm
POUT ≤ 34.5 dBm
AWT6166R
Table 7: Electrical Characteristics for GSM900
Unless otherwise stated (VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty 25%,
ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGH)
PARAMETER
MIN
TYP
MAX
UNIT
Operating Frequency (FO)
880
-
915
MHz
0
3.0
5
dB m
Output Power, PMAX
34.5
35.0
-
dB m
Freq = 880 to 915 MHz
Degraded Output Power
32.5
33.5
-
dB m
VBATT = 3.0 V, TC = 85 °C,
PIN = 0 dBm
50
55
-
%
Forward Isolation 1
-
-38
-33
dB m
TX_EN = LOW, VRAMP = 0.2 V
PIN = 5 dBm
Forward Isolation 2
-
-25
-20
dB m
TX_EN = HIGH, VRAMP = 0.2 V,
PIN = 5 dBm
Cross Isolation
(Coupling of GSM 2fo and 3fo to
DCS/PCS port)
-
-23
-17
dB m
POUT ≤ 34.5 dBm
-
-22
-30
-10
-10
dB m
POUT ≤ 34.5 dBm
Input Power
PAE @ PMAX
Harmonics
2fo, 3fo
n*FO, (n ≥ 4), FO ≤ 12.75 GHz
COMMENTS
Freq = 880 to 915MHz
VSWR = 8:1 All Phases, POUT ≤ 34.5 dBm
Stability
Ruggedness
-
-
-36
dB m
FOUT < 1 GHz
-
-
-30
dB m
FOUT > 1 GHz
-
-
10:1
VSWR
-
-84
-77
dB m
FTX = 915 MHz,
RBW = 100 kHz,
FRX = 925 to 935 MHz,
POUT ≤ 34.5 dBm
FTX = 915 MHz,
RBW = 100 kHz,
FRX = 935 to 960MHz,
POUT ≤ 34.5 dBm
RX Noise Power
Input VSWR
-
-87
-83
dB m
-
1.5:1
2.5:1
-
Data Sheet - Rev 2.0
02/2006
All load phases,
POUT ≤ 34.5 dBm
POUT ≤ 34.5 dBm
7
AWT6166R
Table 8: Electrical Characteristics for DCS
Unless otherwise stated (VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty 25%,
ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = HIGH, TX_EN = HIGH)
PARAMETER
MIN
TYP
MAX
UNIT
COMMENTS
Operating Frequency
1710
-
1785
MHz
Input Power
0
3.0
5
dB m
Output Power, PMAX
32
33
-
dB m
Degraded Output Power
30
31
-
dB m
VBATT = 3.0 V, TC = 85 °C,
PIN = 0 dBm
PAE @ PMAX
45
53
-
%
Freq = 1710 to 1785 MHz
Forward Isolation 1
-
-40
-35
dB m
TX_EN = LOW, VRAMP = 0.2 V
PIN = 5 dBm
Forward Isolation 2
-
-22
-17
dB m
TX_EN = HIGH, VRAMP = 0.2 V,
PIN = 5 dBm
Harmonics
2FO, 3FO
n*FO, (n ≥ 4), FO ≤ 12.75 GHz
-
-22
-20
-10
-8
dB m
POUT ≤ 32 dBm
VSWR = 8:1 All Phases, POUT ≤ 32 dBm
Stability
Ruggedness
8
-
-
-36
dB m
FOUT < 1 GHz
-
-
-30
dB m
FOUT > 1 GHz
-
-
10:1
VSWR
RX Noise Power
-
-86
-80
Input VSWR
-
1.5:1
2.5:1
Data Sheet - Rev 2.0
02/2006
dB m
All load phases,
POUT ≤ 32 dBm
FTX = 1785 MHz,
RBW = 100 kHz,
FRX = 1805 to 1880 MHz,
POUT ≤ 32 dBm
POUT ≤ 32 dBm
AWT6166R
Table 9: Electrical Characteristics for PCS
Unless otherwise stated (VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty 25%,
ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = HIGH, TX_EN = HIGH)
PARAMETER
MIN
TYP
MAX
UNIT
COMMENTS
Operating Frequency
1850
-
1910
MHz
Input Power
0
3.0
5
dB m
Output Power, PMAX
32
33
-
dB m
Degraded Output Power
30
31
-
dB m
VBATT = 3.0 V, TC = 85 °C,
PIN = 0 dBm
PAE @ PMAX
45
53
-
%
Freq = 1850 to 1910 MHz
Forward Isolation 1
-
-40
-33
dB m
TX_EN = LOW, VRAMP = 0.2 V
PIN = 5 dBm
Forward Isolation 2
-
-22
-17
dB m
TX_EN = HIGH, VRAMP = 0.2 V,
PIN = 5 dBm
Harmonics
2FO, 3FO
n*FO, (n ≥ 4), FO ≤ 12.75 GHz
-
-25
-20
-10
-5
dB m
POUT ≤ 32 dBm
VSWR = 8:1 All Phases, POUT ≤ 32 dBm
Stability
Ruggedness
-
-
-36
dB m
FOUT < 1 GHz
-
-
-30
dB m
FOUT > 1 GHz
-
-
10:1
RX Noise Power
-
-86
-80
Input VSWR
-
1.5:1
2.5:1
VSWR
Data Sheet - Rev 2.0
02/2006
dB m
All load phases,
POUT ≤ 32 dBm
FTX = 1910 MHz,
RBW = 100 kHz,
FRX = 1930 to 1990 MHz,
POUT ≤ 32 dBm
POUT ≤ 32 dBm
9
AWT6166R
APPLICATION INFORMATION
Figure 4: Application Schematic
10
Data Sheet - Rev 2.0
02/2006
AWT6166R
PACKAGE OUTLINE
Figure 5: M15 Package Outline - 18 Pin 6 mm x 6 mm x 1.3 mm Amplifier Module
Figure 6: Branding Specification
Data Sheet - Rev 2.0
02/2006
11
AWT6166R
ORDERING INFORMATION
ORDER NUMBER
TEMPERATURE
RANGE
PACKAGE
DESCRIPTION
COMPONENT PACKAGING
AWT6166RM15P8
-20 oC to +85 oC
RoHS Compliant
18 P i n
6 mm x 6 mm x 1.3 mm
Tape and Reel, 2500 per reel
ANADIGICS, Inc.
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A.
Tel: +1 (908) 668-5000
Fax: +1 (908) 668-5132
URL: http://www.anadigics.com
E-mail: Mktg@anadigics.com
IMPORTANT NOTICE
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without
notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are
subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are
assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges
customers to verify that the information they are using is current before placing orders.
WARNING
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS
product in any such application without written consent is prohibited.
12
Data Sheet - Rev 2.0
02/2006