Rev 2: Dec 2004 AOD442, AOD442L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD442 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. AOD442L ( Green Product ) is offered in a lead-free package. VDS (V) = 60V ID = 38A RDS(ON) < 20mΩ (VGS = 10V) RDS(ON) < 25mΩ (VGS = 4.5V) TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current B,G G TC=100°C Maximum 60 Units V ±20 V 38 B ID IDM Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25°C B Power Dissipation TC=100°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. A 27 60 IAR 30 A EAR 140 mJ 60 PD TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 30 -55 to 175 RθJA RθJL Typ 17.4 51 1.8 °C Max 25 60 2.5 Units °C/W °C/W °C/W AOD442. AOD442L Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 60 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, V DS=5V 60 TJ=55°C 5 100 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125°C VDS=5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge 2.1 µA nA 3 20 31 20 4.5 Units V A 16 VGS=4.5V, ID=20A Coss Max V VDS=48V, V GS=0V IDSS IS Typ 25 mΩ mΩ 5.6 0.74 1920 S 1 V 4 A 2300 pF VGS=0V, VDS=30V, f=1MHz 155 VGS=0V, VDS=0V, f=1MHz 0.65 0.8 Ω 47.6 68 nC 24.2 30 nC pF 116 VGS=10V, V DS=30V, ID=20A pF 6 nC Qgd Gate Drain Charge 14.4 nC tD(on) Turn-On DelayTime 7.4 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VGS=10V, V DS=30V, R L=1.5Ω, RGEN=3Ω 5.1 ns 28.2 ns 5.5 ns IF=20A, dI/dt=100A/µs 34 IF=20A, dI/dt=100A/µs 46 41 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any a given application depends on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOD442. AOD442L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 50 10V 50 4.5V 125°C 40 4V 30 ID(A) ID (A) VDS=5V 40 30 20 3.5V 20 VGS=3V 0 0 1 2 3 25°C 10 10 0 4 5 2 2.5 VDS (Volts) Fig 1: On-Region Characteristics 24 Normalized On-Resistance RDS(ON) (mΩ) 3.5 4 2.4 22 VGS=4.5V 20 18 VGS=10V 16 14 0 10 20 30 2.2 VGS=10V ID=20A 2 1.8 VGS=4.5V 1.6 ID=20A 1.4 1.2 1 0.8 40 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 50 1.0E+02 ID=20A 1.0E+01 40 1.0E+00 125°C IS (A) RDS(ON) (mΩ) 3 VGS(Volts) Figure 2: Transfer Characteristics 30 125°C 1.0E-01 25°C 1.0E-02 1.0E-03 20 25°C 1.0E-04 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AOD442. AOD442L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 3000 Capacitance (pF) 8 VGS (Volts) 3500 VDS=30V ID=20A 6 4 2 2000 1500 Crss 500 0 10 20 30 40 0 50 0 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 10.0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 800 RDS(ON) limited 100µs 10µs 1ms DC 1.0 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) D=Ton/T TJ,PK=Tc+PDM.ZθJc .RθJc RθJC=2.5°C/W 0 1E-05 1E-04 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) VDS (Volts) 10 400 200 TJ(Max)=175°C TA=25°C 0.1 30 TJ(Max)=175°C TA=25°C 600 Power (W) ID (Amps) Coss 1000 0 ZθJc Normalized Transient Thermal Resistance Ciss 2500 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 T 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 10 100 AOD442, AOD442L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 tA = 50 L ⋅ ID BV − VDD Power Dissipation (W) ID(A), Peak Avalanche Current 60 40 30 20 TA=25°C 10 0 0.00001 0.0001 60 40 20 0 0.001 0 25 50 50 40 40 30 20 75 100 125 150 175 TA=25°C 30 20 10 10 0 0.001 0 0 25 50 75 100 125 150 175 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (°C) Figure 14: Current De-rating (Note B) ZθJA Normalized Transient Thermal Resistance 50 TCASE (°C) Figure 13: Power De-rating (Note B) Power (W) Current rating ID(A) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 0.001 0.00001 Single Pulse 0.0001 Ton 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. 100 1000