A-POWER AP9585M

AP9585M
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
D
▼ Lower Gate Charge
D
D
▼ Fast Switching Characteristic
S
-80V
RDS(ON)
180mΩ
ID
G
SO-8
BVDSS
-2.7A
S
S
Description
D
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
S
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Rating
Units
-80
V
±25
V
3
-2.7
A
3
-2.1
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
-20
A
[email protected]=25℃
Total Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
50
℃/W
200302041
AP9585M
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
-80
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
-
-0.07
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V, ID=-2.7A
-
-
180
mΩ
VGS=-4.5V, ID=-2.5A
-
-
200
mΩ
VDS=VGS, ID=-250uA
-1
-
-3
V
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
VDS=-10V, ID=-2.7A
-
5
-
S
o
VDS=-80V, VGS=0V
-
-
-1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=-64V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=±25V
-
-
±100
nA
ID=-2.7A
-
18
28
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=-250uA
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-64V
-
5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
7
-
nC
VDS=-40V
-
10
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
67
-
ns
tf
Fall Time
RD=40Ω
-
30
-
ns
Ciss
Input Capacitance
VGS=0V
-
1790 2860
pF
Coss
Output Capacitance
VDS=-25V
-
140
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
98
-
pF
Min.
Typ.
IS=-2A, VGS=0V
-
-
-1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-2.7A, VGS=0V,
-
80
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
320
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 ℃/W when mounted on Min. copper pad.
AP9585M
40
30
-10V
-6.0V
-5.0V
-4.5V
T A = 25 C
-ID , Drain Current (A)
35
30
25
20
15
V G = -3.0 V
10
-10V
-6.0V
-5.0V
-4.5V
TA=150oC
25
-ID , Drain Current (A)
o
20
15
10
V G = -3.0 V
5
5
0
0
0
4
8
12
16
20
0
-V DS , Drain-to-Source Voltage (V)
4
6
8
10
12
14
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
150
2.2
2.0
I D = -2.5 A
T A =25 ℃
I D = -2.7 A
V G =-10V
1.8
Normalized R DS(ON)
145
RDS(ON) (mΩ )
2
140
135
1.6
1.4
1.2
1.0
0.8
130
0.6
0.4
125
3
4
5
6
7
8
9
10
-50
11
-V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3
6
2.5
2
T j =150 o C
-VGS(th) (V)
-IS(A)
4
T j =25 o C
2
1.5
1
0.5
0
0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP9585M
f=1.0MHz
10000
I D = -2.7A
V DS = -64V
10
C iss
8
1000
C (pF)
-VGS , Gate to Source Voltage (V)
12
6
4
C oss
C rss
100
2
0
10
0
10
20
30
40
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (Rthja)
Duty factor=0.5
10
-ID (A)
1ms
1
10ms
100ms
0.1
T A =25 o C
Single Pulse
1s
DC
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=125oC/W
0.001
0.01
0.1
1
10
100
1000
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q