AP2604GY
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Fast Switching Characteristic
S
▼ Lower Gate Charge
D
D
▼ Small Footprint & Low Profile Package
▼ RoHS Compliant
G
SOT-26
BVDSS
30V
RDS(ON)
45mΩ
ID
5.5A
D
D
Description
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The S0T-26 package is universally used for all commercial-industrial
applications.
D
G
S
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
30
V
±20
V
3
5.5
A
3
4.4
A
Continuous Drain Current , VGS @ 4.5V
Continuous Drain Current , VGS @ 4.5V
1
IDM
Pulsed Drain Current
20
A
PD@TA=25℃
Total Power Dissipation
2
W
Linear Derating Factor
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
62.5
℃/W
200517051-1/4
AP2604GY
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
30
-
-
V
-
0.02
-
V/℃
VGS=10V, ID=4.8A
-
-
45
mΩ
VGS=4.5V, ID=2.4A
-
-
65
mΩ
VDS=VGS, ID=250uA
1
-
3
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
2
VDS=10V, ID=4.8A
-
7
-
S
o
VDS=30V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=24V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS= ±20V
-
-
±100
nA
ID=4.8A
-
6
10
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=250uA
Max. Units
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
3
-
nC
VDS=15V
-
6
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
15
-
ns
tf
Fall Time
RD=15Ω
-
4
-
ns
Ciss
Input Capacitance
VGS=0V
-
440
705
pF
Coss
Output Capacitance
VDS=25V
-
105
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
35
-
pF
Min.
Typ.
IS=4.8A, VGS=0V
-
-
1.2
V
IS=4.8A, VGS=0V,
-
15
-
ns
dI/dt=100A/µs
-
7
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 156℃/W when mounted on min. copper pad.
2/4
AP2604GY
40
35
T A =25 o C
35
10V
7.0V
ID , Drain Current (A)
ID , Drain Current (A)
30
25
T A =150 o C
30
5.0V
20
4.5V
15
25
10V
7.0V
20
5.0V
4.5V
15
10
10
V G =3.0V
5
V G =3.0V
5
0
0
0
0.5
1
1.5
2
2.5
3
3.5
0
4
0.5
Fig 1. Typical Output Characteristics
1.5
2
2.5
3
3.5
4
Fig 2. Typical Output Characteristics
75
1.8
I D = 2.4 A
65
I D =4.8A
V G =10V
1.6
o
T A =25 C
Normalized RDS(ON)
RDS(ON) (mΩ)
1
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
55
45
1.4
1.2
1.0
35
0.8
0.6
25
3
5
7
9
-50
11
V GS , Gate-to-Source Voltage (V)
0
50
100
150
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.8
5
1.6
4
1.4
T j =150 o C
VGS(th)(V)
IS(A)
3
T j =25 o C
2
1.2
1
1
0.8
0
0.6
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP2604GY
f=1.0MHz
16
1000
VGS , Gate to Source Voltage (V)
I D =4.8A
C iss
V DS =15V
V DS =20V
V DS =24V
C (pF)
12
8
C oss
100
C rss
4
0
10
0
2
4
6
8
10
12
1
5
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (R thja)
100
10
1ms
ID (A)
9
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
1
10ms
100ms
0.1
T A =25 o C
Single Pulse
1s
DC
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.01
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Single Pulse
Rthja = 156℃/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4/4