A-POWER AP9926GEM

AP9926GEM
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low on-resistance
▼ Capable of 2.5V gate drive
D2
D2
D1
D1
▼ Low drive current
SO-8
20V
RDS(ON)
30mΩ
ID
G2
S2
▼ Surface mount package
BVDSS
6A
G1
S1
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D1
G1
D2
G2
S1
S2
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Rating
Units
20
V
±12
V
3
6
A
3
4.8
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
20
A
[email protected]=25℃
Total Power Dissipation
2
W
Linear Derating Factor
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
62.5
℃/W
20112002
AP9926GEM
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
20
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.1
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=4.5V, ID=6A
-
-
30
mΩ
VGS=2.5V, ID=5.2A
-
-
45
mΩ
VDS=VGS, ID=250uA
0.5
-
-
V
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
VDS=10V, ID=6A
-
15.6
-
S
o
VDS=20V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=20V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS= ±10V
-
-
±10
uA
ID=6A
-
12.5
-
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=250uA
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=20V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=5V
-
6.5
-
nC
VDS=10V
-
5
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
9
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=5V
-
26.2
-
ns
tf
Fall Time
RD=10Ω
-
6.8
-
ns
Ciss
Input Capacitance
VGS=0V
-
355
-
pF
Coss
Output Capacitance
VDS=20V
-
190
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
85
-
pF
Min.
Typ.
VD=VG=0V,VS=1.2V
-
-
1.67
A
Tj=25℃,IS=1.7A,VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
IS
VSD
Parameter
Continuous Source Current ( Body Diode )
2
Forward On Voltage
Test Conditions
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135℃/W when mounted on Min. copper pad.
Max. Units
AP9926GEM
24
25
4.5V
4.0V
3.5V
3.0V
ID , Drain Current (A)
20
18
2.5V
15
4.5V
4.0V
3.5V
3.0V
T C =150 o C
ID , Drain Current (A)
T C =25 o C
10
2.5V
12
V GS =2.0V
6
V GS =2.0V
5
0
0
0
0.5
1
1.5
2
0
2.5
0.5
1
1.5
2
2.5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
45
1.8
I D =6A
I D =6A
o
T C =25 C
40
V GS =4.5V
Normalized R DS(ON)
RDS(ON) (mΩ)
1.5
35
30
1.2
0.9
25
20
0.6
2
3
4
5
V GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
6
-50
0
50
100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150
AP9926GEM
2.5
8
2
1.5
PD (W)
ID , Drain Current (A)
6
4
1
2
0.5
0
0
25
50
75
100
125
150
0
30
T c , Case Temperature ( o C)
60
90
120
150
T c , Case Temperature ( o C)
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
1
100
Normalized Thermal Response (R thja)
Duty Factor = 0.5
10
ID (A)
1ms
10ms
1
100ms
1s
0.1
10s
DC
T C =25 o C
Single Pulse
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
T
Single Pulse
Duty Factor = t/T
Peak Tj = P DM x Rthja + Ta
Rthja=135 oC/W
0.01
0.1
1
10
100
0.001
0.0001
V DS (V)
Fig 7. Maximum Safe Operating Area
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 8. Effective Transient Thermal Impedance
AP9926GEM
12
f=1.0MHz
1000
VGS , Gate to Source Voltage (V)
I D =6A
Ciss
V DS =10V
9
V DS =15V
Coss
C (pF)
V DS =20V
6
100
Crss
3
0
10
0
5
10
15
20
25
1
8
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
1.5
10
1.2
29
T j =25 o C
VGS(th) (V)
IS(A)
22
Fig 10. Typical Capacitance Characteristics
100
T j =150 o C
15
V DS (V)
1
0.9
0.6
0.1
0.3
0.01
0
0.4
0.8
1.2
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
T j , Junction Temperature ( o C )
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
150
AP9926GEM
VDS
RD
90%
VDS
D
RG
G
TO THE
OSCILLOSCOPE
0.5 x RATED VDS
10%
VGS
S
+
VGS
5v
-
td(on)
Fig 13. Switching Time Circuit
td(off) tf
tr
Fig 14. Switching Time Waveform
VG
VDS
QG
TO THE
OSCILLOSCOPE
D
5V
G
RATED VDS
S
QGS
QGD
VGS
+
1~ 3 mA
IG
ID
Charge
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Q