A-POWER AP4226GM

AP4226GM
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-Resistance
▼ Simple Drive Requirement
D2
D2
D1
D1
▼ Dual N MOSFET Package
S1
30V
RDS(ON)
18mΩ
ID
G2
S2
SO-8
BVDSS
8.2A
G1
Description
D2
D1
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G2
G1
S2
S1
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Rating
Units
30
V
± 20
V
Continuous Drain Current
3
8.2
A
Continuous Drain Current
3
6.7
A
30
A
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
2
W
Linear Derating Factor
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
62.5
℃/W
201211031
AP4226GM
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
30
-
-
V
-
0.03
-
V/℃
VGS=10V, ID=6A
-
-
18
mΩ
VGS=4.5V, ID=4A
-
-
28
mΩ
VDS=VGS, ID=250uA
1
-
3
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
VGS(th)
Static Drain-Source On-Resistance
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=250uA
2
Max. Units
VDS=10V, ID=6A
-
15
-
S
o
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70 C)
o
VDS=24V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS= ± 20V
-
-
±100
nA
ID=8A
-
20
30
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
12
-
nC
VDS=15V
-
12
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
31
-
ns
tf
Fall Time
RD=15Ω
-
12
-
ns
Ciss
Input Capacitance
VGS=0V
-
1450 2320
pF
Coss
Output Capacitance
VDS=25V
-
320
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
230
-
pF
Min.
Typ.
IS=1.7A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=8A, VGS=0V,
-
27
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
18
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135℃/W when mounted on Min. copper pad.
AP4226GM
35
35
10V
T A =25 o C
5.0V
5.0V
28
ID , Drain Current (A)
ID , Drain Current (A)
28
10V
T A =150 o C
4.0V
21
14
4.0V
21
14
V G =3.0V
7
7
V G =3.0V
0
0
0
1
1
2
2
0
3
V DS , Drain-to-Source Voltage (V)
1
1
2
2
3
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
80
1.8
I D =6.0A
T A =25 ℃
I D =6A
V GS =10V
1.6
Normalized RDS(ON)
RDS(ON) (mΩ )
60
40
1.4
1.2
1
20
0.8
0
0.6
2
4
6
8
10
12
-50
V GS , Gate-to-Source Voltage (V)
0
50
100
150
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.50
10
2.25
T j =25 o C
T j =150 o C
1
VGS(th) (V)
IS(A)
2.00
1.75
1.50
1.25
0.1
1.00
0
0.4
0.8
1.2
V SD ,Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
T j , Junction Temperature (
150
o
C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
AP4226GM
f=1.0MHz
10000
16
V DS =15V
V DS =20V
V DS =24V
12
Ciss
1000
C (pF)
VGS , Gate to Source Voltage (V)
I D =8A
8
Coss
Crss
100
4
0
10
0
10
20
30
40
50
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (R thja)
Duty factor=0.5
100us
10
ID (A)
1ms
10ms
1
100ms
1s
0.1
T c =25 o C
Single Pulse
DC
0.01
0.2
0.1
0.1
0.05
0.02
PDM
0.01
t
0.01
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 135℃
℃ /W
0.001
0.1
1
10
100
0.0001
0.001
0.01
V DS (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q