CYSTEKEC DAP202N3

Spec. No. : C303N3P
Issued Date : 2003.05.27
Revised Date
Page No. : 1/4
CYStech Electronics Corp.
High –speed double diode
DAP202N3
Description
The DAP202N3 consists of two high-speed switching diodes with common anodes, fabricated in planar
technology, and encapsulated in a small SOT-23 plastic SMD package.
Equivalent Circuit
Outline
DAP202N3
SOT-23
1
2
Common Anode
3
1:Cathode
2:Cathode
3:Common Anode
Cathode
Cathode
Features
• Small plastic SMD package
• High switching speed: max. 4ns
• Continuous reverse voltage: max. 75V
• Repetitive peak reverse voltage: max. 85V
• Repetitive peak forward current: max. 450mA.
Applications
• High-speed switching in thick and thin-film circuits.
DAP202N3
CYStek Product Specification
Spec. No. : C303N3P
Issued Date : 2003.05.27
Revised Date
Page No. : 2/4
CYStech Electronics Corp.
Absolute Maximum Ratings @TA=25℃
Parameters
Repetitive peak reverse voltage
Continuous reverse voltage
Continuous forward current(single diode loaded)
Continuous forward current(double diode loaded)
Repetitive peak forward current
Non-repetitive peak forward current
@square wave, Tj=125℃ prior to surge t=1µs
t=1ms
t=1s
Total power dissipation(Note 1)
Junction Temperature
Storage Temperature
Symbol
VRRM
VR
IF
Min
-
IFRM
IFSM
Ptot
Tj
Tstg
-65
Max
85
75
215
125
450
Unit
V
V
4
1
0.5
250
150
+150
A
A
A
mW
°C
°C
mA
mA
Note 1: Device mounted on an FR-4 PCB.
Electrical Characteristics @ Tj=25℃ unless otherwise specified
Parameters
Symbol
Forward voltage
VF
Reverse current
IR
Diode capacitance
Cd
Reverse recovery time
trr
Forward recovery voltage
Vfr
Conditions
Min
Typ.
-
-
-
-
-
IF=1mA
IF=10mA
IF=50mA
IF=150mA
VR=25V
VR=75V
VR=25V,Tj=150℃
VR=75V,Tj=150℃
VR=0V, f=1MHz
when switched from IF=10mA to
IR=10mA,RL=100Ω, measured
at IR=1mA
when switched from IF=10mA
tr=20ns
Max
715
855
1
1.25
30
1
30
50
Unit
mV
mV
V
V
nA
µA
µA
µA
-
2
pF
-
-
4
ns
-
-
1.75
V
Thermal Characteristics
Symbol
Parameter
Rth,j-tp
Rth, j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
Conditions
Value
Note 1
360
500
Unit
℃/W
℃/W
Note 1: Device mounted on an FR-4 PCB.
DAP202N3
CYStek Product Specification
Spec. No. : C303N3P
Issued Date : 2003.05.27
Revised Date
Page No. : 3/4
CYStech Electronics Corp.
Characteristic Curves
Forward Current vs Forward Voltage
Forward Current vs Ambient Temperature
275
225
250
225
single diode loaded
200
Forward Current---IF(mA)
Forward Current---IF(mA)
250
175
double diode loaded
150
125
100
75
50
200
175
150
125
100
75
50
25
25
0
0
0
50
100
150
0
200
0.2
Ambient Temperature---Ta(℃)
Non-repetitive peak forward
current vs pulse duration
1.2
1.4
Diode Capacitance vs Reverse Voltage
100
0.7
Diode Capacitance---CD(pF)
Non-repetitive peak forward
current---IFSM(A)
0.4 0.6 0.8
1
Forward Voltage---VF(V)
10
1
0.1
0.6
0.5
0.4
0.3
0.2
0.1
0
1
10
100
1000
Pulse Duration---tp(μs)
DAP202N3
10000
0
2
4
6
8
10
12
14
16
Reverse Voltage---VR(V)
CYStek Product Specification
Spec. No. : C303N3P
Issued Date : 2003.05.27
Revised Date
Page No. : 4/4
CYStech Electronics Corp.
SOT-23 Dimension
Marking:
A
L
A1
TE
3
B
S
2
1
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
G
V
Style: Pin 1.Cathode 2.Cathode
3.Common Anode
C
D
K
H
J
*: Typical
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0005 0.0040
DIM
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.60
0.89
1.30
0.30
0.50
1.70
2.30
0.013
0.10
DIM
J
K
L
S
V
Inches
Min.
Max.
0.0034 0.0070
0.0128 0.0266
0.0335 0.0453
0.0830 0.1083
0.0098 0.0256
Millimeters
Min.
Max.
0.085
0.177
0.32
0.67
0.85
1.15
2.10
2.75
0.25
0.65
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
DAP202N3
CYStek Product Specification