CYStech Electronics Corp. Spec. No. : C303S2 Issued Date : 2003.12.11 Revised Date Page No. : 1/4 High –speed switching diode MDL914S2 Description The MDL914S2 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small SOD-323 plastic SMD package. Symbol Outline SOD-323 MDL914S2 Features • Small plastic SMD package • High switching speed: max. 4ns • Reverse voltage: max. 100V • Peak forward surge current: max. 500mA. Applications • High-speed switching in thick and thin-film circuits. Absolute Maximum Ratings @TA=25℃ Parameters Reverse voltage Forward current Peak forward surge current Junction Temperature Storage Temperature MDL914S2 Symbol VR IF IFSM Tj Tstg Min -65 Max 100 200 500 150 +150 Unit V mA mA °C °C CYStek Product Specification Spec. No. : C303S2 Issued Date : 2003.12.11 Revised Date Page No. : 2/4 CYStech Electronics Corp. Electrical Characteristics @ TA=25℃ unless otherwise specified Parameters Symbol Reverse breakdown voltage Forward voltage VR VF Reverse leakage current IR Diode capacitance CD Reverse recovery time trr Conditions Min Typ. Max Unit - - - - - - 1 25 5 4 V nA µA pF - - 4 ns IR=100µA IF=10mA VR=20V VR=75V VR=0V, f=1MHz when switched from IF=10mA to IR=10mA,RL=100Ω, measured at IR=1mA Thermal Characteristics Symbol Parameter Conditions Ptot, Ta=25℃ Derate above 25℃ Rth, j-a Total device dissipation on FR-4 board Note 1 Thermal resistance from junction to ambient Note 1 Max 200 1.57 635 Unit mW mW/℃ ℃/W Note 1: Device mounted on an FR-4 PCB. MDL914S2 CYStek Product Specification Spec. No. : C303S2 Issued Date : 2003.12.11 Revised Date Page No. : 3/4 CYStech Electronics Corp. Characteristic Curves Forward Current vs Forward Voltage Reverse Leakage Current vs Reverse Voltage 100 Reverse Leakage Current---IR( μA) Forward Current---I F(mA) 100 T a=8 5℃ 10 T a= 2 5℃ 1 T a=- 40℃ 0.1 10 T a= 150℃ 1 T a= 125 ℃ Ta=85℃ 0.1 Ta=55℃ 0.01 T a= 25℃ 0.001 0.2 0.4 0.6 0.8 1 1.2 Forward Voltage---VF(V) 0 10 20 30 40 50 Reverse Voltage---VR(V) Capacitance vs Reverse Voltage Diode Capacitance ---C D(pF) 0.68 f=1MHz Ta=25℃ 0.64 0.6 0.56 0.52 0 0.2 0.4 0.6 0.8 Reverse Voltage---VR(V) MDL914S2 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C303S2 Issued Date : 2003.12.11 Revised Date Page No. : 4/4 SOD-323 Dimension Marking: K A 55DH 2 1 Style: Pin 1.Cathode 2.Anode B D 2-Lead SOD-323 Plastic Surface Mounted Package, CYStek Package Code: S2 J H E C *: Typical Inches Min. Max. 0.0630 0.0709 0.0453 0.0531 0.0315 0.0394 0.0098 0.0157 DIM A B C D Millimeters Min. Max. 1.60 1.80 1.15 1.35 0.80 1.00 0.25 0.40 DIM E H J K Inches Min. Max. 0.0060 REF 0.0000 0.0040 0.0035 0.0070 0.0906 0.1063 Millimeters Min. Max. 0.15 REF 0.00 0.10 0.089 0.177 2.30 2.70 Notes: 1.Controlling dimension : millimeters. 2.Lead thickness specified per L/F drawing with solder plating. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MDL914S2 CYStek Product Specification