DYNEX DIM375WKS06-S000

DIM375WKS06-S000
DIM375WKS06-S000
IGBT Chopper Module (Upper Arm Control)
DS5732-1.0 February 2004
FEATURES
KEY PARAMETERS
■
Low Forward Voltage Drop
VCES
600V
■
Isolated Copper Baseplate
VCE(sat)* (typ)
2.1V
IC
(max)
375A
IC(PK)
(max)
750A
APPLICATIONS
■
Choppers
■
Motor Controllers
*(measured at the power busbars and not the auxiliary terminals)
The Powerline range of modules includes half bridge,
chopper, bi-directional, dual and single switch configurations
covering voltages from 600V to 3300V and currents up to 3600A.
The DIM375WKS06-S000 is a 600V n channel enhancement
mode, insulated gate bipolar transistor (IGBT) chopper module
configured with the upper arm of the bridge controlled. The
module is suitable for a variety of medium voltage applications in
motor drives and power conversion.
1(K,E)
2(A)
3(C1)
4(G1)
5(E1)
The IGBT has a wide reverse bias safe operating area
(RBSOA) for ultimate reliability in demanding applications.
These modules incorporate electrically isolated base plates
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
Fig. 1 Chopper circuit diagram
Typical applications include dc motor drives, ac pwm
drivesand ups systems..
ORDERING INFORMATION
Order as: DIM375WKS06-S000
Note: When ordering, use complete part number.
Outline type code: W
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM375WKS06-S000
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Symbol
Test Conditions
Parameter
VCES
Collector-emitter voltage
VGES
Gate-emitter voltage
VGE = 0V
-
Max.
Units
600
V
±20
V
Continuous collector current
Tcase = 65˚C
375
A
IC(PK)
Peak collector current
1ms, Tcase = 95˚C
750
A
Pmax
Max. transistor power dissipation
Tcase = 25˚C, Tj = 150˚C
1736
W
Diode I2t value
VR = 0, tp = 10ms, Tvj = 125˚C
TBD
kA2s
Isolation voltage - per module
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
2.5
kV
IC
I2t
Visol
THERMAL AND MECHANICAL RATINGS
Internal insulation: Al2O3
Baseplate material: Cu
Creepage distance: 24mm
Test Conditions
Parameter
Symbol
Rth(j-c)
Clearance: 13mm
CTI (Critical Tracking Index): 175
Thermal resistance - transistor arm
Continuous dissipation -
Min.
Typ.
Max.
Units
-
-
72
˚C/kW
-
-
135
˚C/kW
-
-
15
˚C/kW
junction to case
Rth(j-c)
Rth(c-h)
Tj
Tstg
-
Thermal resistance - diode (per arm)
Continuous dissipation -
(Antiparallel and freewheel diode)
junction to case
Thermal resistance - case to heatsin
Mounting torque 5Nm
(per module)
(with mounting grease)
Junction temperature
Transistor
-
-
150
˚C
Diode
-
-
125
˚C
–40
-
125
˚C
3
-
5
Nm
2.5
-
5
Nm
-
Storage temperature range
Screw torque
Mounting - M6
Electrical connections - M6
2/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM375WKS06-S000
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Collector cut-off current
VGE = 0V, VCE = VCES
-
-
2
mA
(IGBT and Diode arm)
VGE = 0V, VCE = VCES, Tcase = 125˚C
-
-
10
mA
Gate leakage current
VGE = ±20V, VCE = 0V
-
-
2
µA
VGE(TH)
Gate threshold voltage
IC = 15mA, VGE = VCE
4.5
5.5
7.5
V
VCE(sat)†
Collector-emitter saturation voltage
VGE = 15V, IC = 350A
-
2.1
2.6
V
VGE = 15V, IC = 350A, , Tcase = 125˚C
-
2.3
2.8
V
ICES
IGES
IF
Diode forward current
DC
-
-
375
A
IFM
Diode maximum forward current
tp = 1ms
-
-
750
A
VF†
Diode forward voltage
IF = 350A
-
1.5
1.8
V
(IGBT and Diode arm)
IF = 350A, Tcase = 125˚C
-
1.5
1.8
V
Cies
Input capacitance
VCE = 25V, VGE = 0V, f = 1MHz
-
40
-
nF
LM
Module inductance
-
-
20
-
nH
Internal transistor resistance - per arm
-
-
0.23
RINT
mΩ
Note:
†
Measured at the power busbars and not the auxiliary terminals.
L* is the circuit inductance + LM
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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3/8
DIM375WKS06-S000
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise
Min.
Typ.
Max.
Units
IC = 375A
-
600
-
ns
Fall time
VGE = ±15V
-
250
-
ns
EOFF
Turn-off energy loss
VCE = 300V
-
26
-
mJ
td(on)
Turn-on delay time
RG(ON) = RG(OFF) = 4.7Ω
-
200
-
ns
L ~ 100nH
-
150
-
ns
Parameter
Symbol
td(off)
tf
tr
Turn-off delay time
Rise time
Test Conditions
EON
Turn-on energy loss
-
16
-
mJ
Qg
Gate charge
-
3
-
µC
Qrr
Diode reverse recovery charge
IF = 375A, VR = 300V,
-
20
-
µC
Irr
Diode reverse current
dIF/dt = 3000A/µs
-
200
-
A
-
5
-
mJ
Min.
Typ.
Max.
Units
IC = 375A
-
650
-
ns
Fall time
VGE = ±15V
-
500
-
ns
EOFF
Turn-off energy loss
VCE = 300V
-
40
-
mJ
td(on)
Turn-on delay time
RG(ON) = RG(OFF) = 4.7Ω
-
200
-
ns
L ~ 100nH
-
100
-
ns
-
15
-
mJ
IF = 375A, VR = 300V,
-
30
-
µC
dIF/dt = 3000A/µs
-
230
-
A
-
8
-
mJ
EREC
Diode reverse recovery energy
Tcase = 125˚C unless stated otherwise
Parameter
Symbol
td(off)
tf
tr
Turn-off delay time
Rise time
EON
Turn-on energy loss
Qrr
Diode reverse recovery charge
Irr
Diode reverse current
EREC
4/8
Diode reverse recovery energy
Test Conditions
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM375WKS06-S000
TYPICAL CHARACTERISTICS
700
600
700
Common emitter
Tcase = 125˚C
Vce is measured at power
600 busbars and not the
auxiliary terminals
Common emitter
Tcase = 25˚C
Vce is measured at power
busbars and not the
auxiliary terminals
500
Collector current, Ic - (A)
Collector current, Ic - (A)
500
400
300
200
400
300
200
VGE = 10V
VGE = 12V
VGE = 15V
VGE = 20V
100
0
0
1
2.0
3
4
Collector-emitter voltage, Vce - (V)
VGE = 10V
VGE = 12V
VGE = 15V
VGE = 20V
100
0
0
5
1.0
2.0
3.0
4.0
5.0
6.0
14
16
Collector-emitter voltage, Vce - (V)
Fig.3 Typical output characteristics
Fig.4 Typical output characteristics
45
60
Conditions:
Tcase = 125ºC
40 Vcc = 300V
Rg = 4.7 ohms
Eoff
Eon
Erec
50
Switching Energy, Esw - (mJ)
Switching energy, Esw - (mJ)
35
30
25
20
15
40
30
20
10
10
Eon
Eoff
Erec
5
0
0
50
100
150
200
250
300
Collector current, IC - (A)
350
400
Fig.4 Typical switching energy vs collector current
0
2
4
10
12
6
8
Gate resistance, Rg - (Ohms)
Fig.5 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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5/8
DIM375WKS06-S000
700
VF is measured at power busbars
and not the auxiliary terminals
600
900
800
Tj = 25˚C
Tj = 125˚C
700
Collector current, IC - (A)
Foward current, IF - (A)
500
400
300
200
600
Chip
500
400
Module
300
200
100
100
Tj = 125˚C
Vge = ±15V
Rg = 4.7
0
0
0
0
0.5
2.0
1.0
1.5
Foward voltage, VF - (V)
2.5
600
200
400
Collector-emitter voltage, Vce - (V)
3.0
Fig.7 Reverse bias safe operating area
Fig.6 Diode typical forward characteristics
1000
300
Tj = 125˚C
Transient thermal impedance, Zth (j-c) - (°C/kW )
Transistor
Diode
Reverse recovery current, Irr - (A)
250
200
150
100
50
100
10
IGBT
Diode
0
0
100
200
300
400
500
Reverse voltage, VR - (V)
600
Fig.7 Diode reverse bias safe operating area
6/8
800
700
1
0.001
Ri (˚C/KW)
τi (ms)
Ri (˚C/KW)
τi (ms)
0.01
1
2
3
1.6941 6.7097 9.0831
0.1069 4.363 21.9182
3.0955 17.2139 16.1073
0.0895 2.6571 17.3886
0.1
Pulse width, tp - (s)
1
4
54.477
92.4022
98.6071
71.8108
10
Fig.8 Transient thermal impedance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM375WKS06-S000
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
1(K,E)
2(A)
3(C1)
4(G1)
5(E1)
Nominal weight: 420g
Module outline type code: W
Fig. 15 Package details
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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7/8
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
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These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
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