APTGT300SK60D3G Buck Chopper Trench + Field Stop IGBT3 Power Module Q1 3 VCES = 600V IC = 300A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies 4 5 1 2 Features • Trench + Field Stop IGBT3 Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • High level of integration • M6 power connectors Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant Absolute maximum ratings IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 600 400 300 600 ±20 940 Tj = 125°C 600A @ 520V TC = 25°C TC = 80°C TC = 25°C Unit V A March , 2011 Parameter Collector - Emitter Breakdown Voltage V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT300SK60D3G – Rev 1 Symbol VCES APTGT300SK60D3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25°C VGE = 15V IC = 300A Tj = 150°C VGE = VCE , IC = 4.8 mA VGE = 20V, VCE = 0V Min Typ 5.0 1.5 1.7 5.8 Max Unit 500 1.9 µA 6.5 400 V nA Max Unit V Dynamic Characteristics Symbol Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Eon Turn on Energy Eoff Turn off Energy Isc Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz Min VGE=±15V, IC=300A VCE=300V Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 300A RG = 2.2Ω Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 300A RG = 2.2Ω VGE = ±15V Tj = 25°C VBus = 300V Tj = 150°C IC = 300A Tj = 25°C RG = 2.2Ω Tj = 150°C VGE ≤15V ; VBus = 360V tp ≤ 6µs ; Tj = 150°C Typ 18.5 1.2 0.5 nF 3.2 µC 110 50 490 ns 50 130 60 ns 530 70 3.1 3.3 12 12.5 mJ 1500 A Reverse diode ratings and characteristics IF Maximum Reverse Leakage Current VR=600V DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 300A VGE = 0V IF = 300A VR = 300V di/dt =4800A/µs Err Reverse Recovery Energy Min 600 Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C www.microsemi.com Typ Max 500 750 300 1.6 1.5 100 150 14.4 30.4 3.4 7.2 Unit V µA A 2 V March , 2011 IRRM Test Conditions ns µC mJ 2-5 APTGT300SK60D3G – Rev 1 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTGT300SK60D3G Thermal and package characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight For terminals To Heatsink M6 M6 4000 -40 -40 -40 3 3 Typ Max 0.16 0.25 Unit °C/W V 175 125 125 5 5 350 °C N.m g D3 Package outline (dimensions in mm) 1° A www.microsemi.com 3-5 APTGT300SK60D3G – Rev 1 March , 2011 DÉTAIL A APTGT300SK60D3G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 500 500 400 400 TJ = 150°C VGE=19V TJ=150°C IC (A) IC (A) VGE=13V 300 300 200 200 100 100 VGE=15V VGE=9V TJ=25°C 0 0 0 0.5 1 1.5 2 0 2.5 0.5 1 VCE (V) 25 20 300 15 E (mJ) IC (A) TJ=25°C 400 200 TJ=150°C 100 VCE = 300V VGE = 15V RG = 2.2Ω TJ = 150°C 3 3.5 Eoff Er 10 5 Eon 0 0 5 6 7 8 9 10 0 11 100 200 Switching Energy Losses vs Gate Resistance 35 20 500 600 Reverse Bias Safe Operating Area Eon 600 500 IC (A) 25 400 700 VCE = 300V VGE =15V IC = 300A TJ = 150°C 30 300 IC (A) VGE (V) E (mJ) 2.5 Energy losses vs Collector Current Transfert Characteristics 500 1.5 2 VCE (V) Eoff 15 10 400 300 200 Er 5 VGE=15V TJ=150°C RG=2.2Ω 100 0 0 0 2.5 5 7.5 10 12.5 Gate Resistance (ohms) 15 0 100 200 300 400 VCE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration IGBT 0.12 0.08 0.04 0.9 March , 2011 0.16 0.7 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 4-5 APTGT300SK60D3G – Rev 1 Thermal Impedance (°C/W) 0.2 APTGT300SK60D3G Forward Characteristic of diode 500 ZCS 60 VCE=300V D=50% RG=2.2Ω TJ=150°C 400 Tc=85°C ZVS IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 80 40 Hard switching 20 300 200 TJ=150°C 100 TJ=25°C 0 0 0 100 200 IC (A) 300 0 400 0.4 0.8 1.2 1.6 VF (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.3 Diode 0.25 0.9 0.2 0.7 0.15 0.5 0.1 0.3 0.05 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein www.microsemi.com 5-5 APTGT300SK60D3G – Rev 1 March , 2011 Rectangular Pulse Duration in Seconds