FLM1414-8F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P1dB = 39.0dBm (Typ.) High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 27% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed DESCRIPTION The FLM1414-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Condition Symbol Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 42.8 W Total Power Dissipation Tc = 25°C PT Storage Temperature Tstg -65 to +175 °C Channel Temperature Tch 175 °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 32.0 and -4.4 mA respectively with gate resistance of 100Ω. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Symbol IDSS Test Conditions Min. Limit Typ. Max. Unit VDS = 5V, VGS = 0V - 3400 5200 mA Transconductance gm VDS = 5V, IDS = 2200mA - 3400 - mS Pinch-off Voltage Vp VDS = 5V, IDS = 170mA -0.5 -1.5 -3.0 V IGS = -170µA -5.0 - - V 38.5 39.0 - dBm 5.0 6.0 - dB - 2200 2600 mA - 27 - % - - ±0.6 dB -44 -46 - dBc Gate Source Breakdown Voltage VGSO Output Power at 1dB G.C.P. P1dB Power Gain at 1dB G.C.P. G1dB Drain Current Power-Added Efficiency Idsr ηadd VDS = 10V f = 14.0 ~ 14.5 GHz IDS = 0.65 IDSS(Typ.) ZS = ZL = 50Ω Gain Flatness ∆G 3rd Order Intermodulation Distortion IM3 f = 14.5GHz, ∆f = 10MHz 2-Tone Test Pout = 28.5dBm S.C.L. Thermal Resistance Rth Channel to Case - 3.0 3.5 °C/W ∆Tch 10V x Idsr x Rth - - 80 °C Channel Temperature Rise CASE STYLE: IA Edition 1.2 August 2004 G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level 1 FLM1414-8F Internally Matched Power GaAs FET OUTPUT POWER & IM3 vs. INPUT POWER 35 Output Power (S.C.L.) (dBc) 40 30 20 10 0 50 100 150 33 31 VDS=10V f1 = 14.5 GHz f2 = 14.51 GHz 2 - tone test Pout 29 27 -25 25 23 -45 21 -55 -65 200 18 Case Temperature (°C) 22 24 26 28 OUTPUT POWER vs. INPUT POWER 40 Pin=34dBm 38 Output Power (dBm) Output Power (dBm) 39 20 Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level OUTPUT POWER vs. FREQUENCY VDS=10V P1dB -35 IM3 38 32dBm 37 36 30dBm 35 34 VDS=10V f = 14.25 GHz 36 Pout 34 25 32 20 30 15 ηadd 28 10 26 5 28dBm 33 0 14.0 14.1 14.2 22 14.3 14.4 14.5 24 26 28 30 32 Input Power (dBm) Frequency (GHz) 2 34 ηadd (%) Total Power Dissipation (W) 50 IM3 (dBc) POWER DERATING CURVE FLM1414-8F Internally Matched Power GaAs FET S11 S22 +j50 S21 S12 +90° +j100 +j25 14.2 14.0 14.2 14.0 +j250 13.8 GHz +j10 13.8 GHz 14.4 14.5 14.4 14.5 14.7 13.8 GHz 10 50Ω 14.5 14.4 1 180° 14.5 14.4 14.2 -j250 0.1 -j25 3 4 0° -j100 SCALE FOR |S12| 14.0 14.2 2 SCALE FOR |S21| 14.0 14.7 -j10 14.7 13.8 GHz 250 14.7 0 0.2 -90° -j50 FREQUENCY S11 (MHZ) MAG ANG S-PARAMETERS VDS = 10V, IDS = 2200mA S21 S12 MAG ANG MAG ANG S22 MAG ANG 13800 .337 18.1 2.004 130.1 .100 132.0 .513 4.9 13900 .284 4.4 2.044 119.3 .104 121.3 .497 -5.7 14000 .231 -12.4 2.081 108.6 .110 109.7 .474 -16.3 14100 .182 -33.2 2.103 97.6 .114 99.8 .444 -26.7 14200 .147 -64.5 2.116 86.4 .114 88.6 .413 -37.7 14300 .144 -103.7 2.115 75.1 .119 77.3 .373 -49.0 14400 .172 -137.1 2.097 63.7 .119 67.5 .338 -60.8 14500 .221 -160.1 2.067 52.4 .118 56.1 .300 -74.0 14600 .272 -176.7 2.017 41.3 .116 45.9 .264 -88.6 14700 .323 170.6 1.949 30.3 .115 35.6 .237 -105.3 3 FLM1414-8F Internally Matched Power GaAs FET 1.5 Min. (0.059) Case Style "IA" Metal-Ceramic Hermetic Package 1 0.1 (0.004) 9.7±0.15 (0.382) 2-R 1.25±0.15 (0.049) 4 2 3 1.8±0.15 (0.071) 1.5 Min. (0.059) 0.5 (0.020) 3.2 Max. (0.126) 13.0±0.15 (0.512) 1.15 (0.045) 0.2 Max. (0.008) 8.1 (0.319) 1. 2. 3. 4. Gate Source (Flange) Drain Source (Flange) Unit: mm(inches) 16.5±0.15 (0.650) For further information please contact: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: www.us.eudyna.com • Do not put this product into the mouth. Eudyna Devices Europe Ltd. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 4