EUDYNA FMM5056VF

FMM5056VF
5.8-7.2GHz Power Amplifier MMIC
FEATURES
・High Output Power: 34.0dBm(typ.)
・High Linear Gain: 28.0dB(typ.)
・Low VSWR
・Broad Band: 5.8～7.2GHz
・Impedance Matched Zin/Zout = 50Ω
・Small Hermetic Metal-Ceramic Package(VF)
DESCRIPTION
The FMM5056VF is a MMIC amplifier that contains a four-stage
amplifier, internally matched, for standard communications band in the
5.8 to 7.2GHz frequency range.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25℃)
Item
DC Input Voltage
Symbol
Rating
Unit
VDD
12
V
DC Input Voltage
VGG
-7
V
Input Power
Pin
12
dBm
Tstg
-55 to +125
℃
Symbol
Condition
Unit
VDD
10
V
Input Power at Tc=25℃
Pin
10
dBm
DC Input Current at Tc=25℃
IDD
Storage Temperature
Recommended Operating Condition
Item
DC Input Voltage at Tc=25℃
Operating Case Temperature
Tc
≤1200
mA
-40 to +85
℃
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25℃)
Item
Test Conditions
Symbol
Frequency Range
Min.
P1dB
Power Gain at 1dB G.C.P.
G1dB
ΔG
Max.
Unit
5.8 - 7.2
32.0
34.0
-
GHz
dBm
25.0
28.0
-
dB
4.0
dB
f
Output Power at 1dB G.C.P.
Limit
Typ.
VDD=10V
VGG=-5V
f=5.8 to 7.2GHz
-
2.4
Input VSWR
VSWRi
-
2:1
2.6 : 1
-
Output VSWR
VSWRo
-
2:1
-
-
-
1100
1200
mA
15.0
mA
Gain Flatness
DC Input Current
IDD
DC Input Current
IGG
-
5.0
ΔTch
-
50
Channel Temperature Rise
VDD=10V,VGG=-5V
CASE STYLE: VF
Class 0
～ 199 V
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)
Edition 1.1
May 2003
℃
G.C.P.:Gain Compression Point
Note: G1dB is referenced to Linear Gain measured at Pin=-5dBm
ESD
-
1
FMM5056VF
5.8-7.2GHz Power Amplifier MMIC
OUTPUT POWER , POWER ADDED EFFICIENCY
vs. INPUT POWER
VDD=10V, VGG=-5V
VDD=10V, VGG=-5V
Pin=+11dBm
36
36
34
34
P1dB
32
Output Power [dBm]
Output Power[dBm]
40
30
Pin=+3dBm
28
26
24
22
Pin=-5dBm
32
30
30
25
28
20
26
15
24
10
22
5
20
20
5.5
6
6.5
Frequency[GHz]
7
0
-10
7.5
-5
0
5
10
15
Input Power [dBm]
VSWR vs. FREQUENCY
IMD vs OUTPUT POWER(S.C.L.)
VDD=10V, VGG=-5V
VDD=10V,VGG=-5V
-20
2.5
5.8GHz
6.4GHz
7.2GHz
-30
-40
2
IM3
VSWR
Intermodulation
Distortion[dBc]
35
5.8GHz
6.4GHz
7.2GHz
Power Added Efficiency [%]
OUTPUT POWER vs. FREQUENCY
-50
1.5
1
IM5
-60
0.5
INPUT
-70
OUTPUT
0
15
20
25
2-tone total Pout [dBm]
30
5.5
6
6.5
Frequency [GHz]
2
7
7.5
FMM5056VF
5.8-7.2GHz Power Amplifier MMIC
DRAIN CURRENT vs OUTPUT POWER
AMPM vs OUTPUT POWER
VDD=10V, VGG=-5V
VDD=10V,VGG=-5V
1150
20
5.8GHz
5.8GHz
6.4GHz
∆Phase [deg.]
1000
7.2GHz
10
5
950
0
900
-5
20
22
6.4GHz
15
7.2GHz
1050
24
26
28
30
32
34
25
36
OUTPUT POWER vs. DRAIN VOLTAGE
VGG=-5V, f=6.4GHz
34
VGG=-5V f=6.4GHz
1150
P1dB
1100
D rain C u rren t [m A]
32
30
Pin=+3dBm
26
24
22
35
DRAIN CURRENT vs OUTPUT POWER
Pin=+11dBm
36
28
30
Output Power [dBm]
Output Power [dBm]
O u tp u t P o w e r [d B m ]
D rain C urrent [mA]
1100
1050
VDD=10V
1000
VDD=9V
950
Pin=-5dBm
VDD=8V
20
900
7
8
9
10
11
20
Drain Voltage,VDD[V]
3
25
30
Output Power [dBm]
35
40
FMM5056VF
5.8-7.2GHz Power Amplifier MMIC
OUTPUT POWER , POWER ADDED EFFICIENCY
vs. INPUT POWER
OUTPUT POWER , POWER ADDED EFFICIENCY
vs. INPUT POWER
VDD=10V, f=6.4GHz
VGG=-5V, f=6.4GHz
35
34
VDD=9V
O u tp u t P o w e r [d B m ]
32
30
VDD=10V
20
26
15
24
10
5
22
5
0
20
20
26
15
24
10
22
20
5
10
0
-10
15
-5
0
5
10
15
Input Power [dBm]
Input Power [dBm]
OUTPUT POWER vs. GATE VOLTAGE
DRAIN CURRENT vs OUTPUT POWER
VDD=10V, f=6.4GHz
VDD=10V f=6.4GHz
1200
Pin=+11dBm
36
1150
34
VGG=-4.5V
1100
VGG=-5V
1050
1000
950
VGG=-5.5V
900
Output P ow er [dB m]
D ra in C u rre n t [m A ]
30
VGG=-5.5V
28
28
0
32
35
25
25
-5
VGG=-4.5V
VGG=-5V
30
30
-10
40
P1dB
32
Pin=+3dBm
30
28
26
24
Pin=-5dBm
22
850
20
800
20
25
30
Output Power [dBm]
Po w e r A d d e d Efficie n c y [%]
36
O u tp u t P o w e r [d B m ]
VDD=8V
34
40
P o w e r A d d e d E ffic ie n c y [ % ]
36
35
40
-6
-5.5
-5
Gate Voltage,VGG [V]
4
-4.5
-4
FMM5056VF
5.8-7.2GHz Power Amplifier MMIC
■ S-PARAMETER
+50j
+100j
+25j
+90°
+250j
+10j
6.5
5.8
10 Ω
6.5
100 Ω
25 Ω
∞
5.8
7.2G H z
7.2GHz
7.2G H z
-250j
-10j
20
±180° 40
0°
Scale for |S 21|
5.8
-25j
-100j
0.05
S 11
-50j
S 22
Scale for |S 12|
6.5
0
0.1
-90°
S12
S21
VDD=10.0V, VGG=-5.0V
Frequency
[GHz]
5.6
5.7
5.8
5.9
6
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
6.9
7
7.1
7.2
7.3
S11
MAG
0.11
0.08
0.06
0.05
0.06
0.06
0.06
0.06
0.05
0.05
0.08
0.13
0.18
0.22
0.25
0.28
0.29
0.29
ANG
60.30
36.46
3.99
-32.63
-63.96
-89.50
-113.38
-140.43
178.94
121.67
74.14
42.82
19.89
0.51
-16.23
-31.24
-45.18
-58.16
S21
MAG
25.75
24.87
24.46
24.49
24.97
25.80
27.01
28.37
29.70
30.74
31.19
31.06
30.58
29.67
28.78
27.80
26.86
25.84
ANG
-53.50
-83.02
-111.49
-139.66
-167.78
163.81
134.51
104.22
72.78
40.05
6.88
-26.88
-60.37
-93.74
-127.22
-160.64
165.59
130.81
5
S12
MAG
0.0013
0.0013
0.0011
0.0012
0.0013
0.0014
0.0016
0.0018
0.0021
0.0024
0.0026
0.0026
0.0026
0.0026
0.0024
0.0020
0.0017
0.0014
ANG
-167.09
-168.43
-159.93
-157.97
-154.12
-154.94
-156.94
-161.66
-170.22
-178.69
169.54
157.81
144.13
132.25
118.43
110.25
98.22
91.48
S22
MAG
0.24
0.22
0.20
0.19
0.18
0.19
0.21
0.24
0.28
0.32
0.34
0.34
0.32
0.29
0.23
0.17
0.09
0.02
ANG
3.68
-16.53
-39.28
-65.48
-95.80
-127.81
-159.39
170.47
141.84
114.82
88.83
63.73
40.09
17.13
-4.92
-27.22
-51.99
-122.39
FMM5056VF
5.8-7.2GHz Power Amplifier MMIC
■ Recommended Bias Circuit and Internal Block Diagram
1000pF
50Ω
VGG
N.C.
RFout
RFin
VDD
VDD
50Ω
50Ω
1000pF
1000pF
Note 1: The RC networks are recommended on the bias supply lines, close to the package,
to prevent video oscillations which could damage the module.
Note 2: Bias point VDD can be connected at the input side or at the output.
The two pins named VDD are internally connected.
6
PIN ASSIGMENT
1 : VDD
2 : RF in
3 : VGG
4 : N.C.
5 : RF out
6 : VDD
FMM5056VF
5.8-7.2GHz Power Amplifier MMIC
■ Package Out Line
3
2
4
3
5
6
1
PIN ASSIGMENT
1 : VDD
2 : RF in
3 : VGG
4 : N.C.
5 : RF out
6 : VDD
Unit : mm
7
FMM5056VF
5.8-7.2GHz Power Amplifier MMIC
For further information please contact :
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU QUANTUM DEVICES EUROPE LTD.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
FUJITSU QUANTUM DEVICES LIMITED
Business Development Division
11th Floor, Hachioji Daiichi-Seimei Bldg.
3-20-6 Myojin-cho
Hachioji-city, Tokyo 192-0046, Japan
TEL: +81-426-43-5885
FAX: +81-426-43-5582
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
・Do not put these products into the mouth.
・Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or
swallowed.
・Observe government laws and company regulations when
discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste
procedures.
FUJITSU QUANTUM DEVICES
SINGAPORE PTE LTD.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd.
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-23770226
FAX: +852-23763269
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 2003 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0202M200
8