FMA3019QFN Preliminary Datasheet v2.1 HIGH LINEARITY INTEGRATED BALANCED AMPLIFIER MODULE BOARD PHOTOGRAPH: FEATURES (1.7-2.0GHZ): • • • • • • • • • • • Balanced low noise amplifier module No external couplers required Excellent 42 dBm Output IP3 28.5 dBm Output Power (P1dB) Excellent Return Loss (RL): -25dB 14 dB Small-Signal Gain (SSG) 1.7 dB Noise Figure 6 V supply (380mA current) Cost effective footprint: 4mm x 4mm QFN 6 mm x 6mm evaluation board available RoHS compliant: (Directive 2002/95/EC) GENERAL DESCRIPTION: The BA2250QFN MMIC module is a selfbiased, integrated and packaged balanced amplifier mounted onto 6x6mm2 FR4 board. The active device is a pair of pseudomorphic High Electron Mobility Transistors (pHEMT) specifically optimised for balanced configuration systems. The Filtronic 0.25µm process ensures class-leading noise performance. The use of a small footprint plastic package allows for a cost effective total system implementation. TYPICAL APPLICATIONS: • • Wireless infrastructure: Tower mounted Amplifiers and front end LNAs for EGSM/PCS/WCDMA/UMTS base stations High intercept-point LNAs ELECTRICAL SPECIFICATIONS: PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Frequency Freq VDS = 6.0 V; IDS = 380mA 1.7 1.85 2 GHz Minimum Noise Figure NF VDS = 6.0 V; IDS = 380mA 1.75 1.8 2.1 dB Input Third-Order Intercept Point IIP3 VDS = 6.0 V; IDS = 380mA 27.5 28.5 30 dBm Small-Signal Gain SSG VDS = 6.0 V; IDS = 380mA 13 14 14.3 dB Small-Signal Input Return Loss S11 VDS = 6.0 V; IDS = 380mA -30 -25 -20 dB Small-Signal Output Return Loss S22 VDS = 6.0 V; IDS = 380mA -40 -30 -25 dB Power at 1dB Gain Compression P1dB VDS = 6.0 V; IDS = 380mA 28 28.5 29 dBm Note: TAMBIENT = 22°C 1 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FMA3019QFN Preliminary Datasheet v2.1 1 ABSOLUTE MAXIMUM RATING : PARAMETER SYMBOL TEST CONDITIONS ABSOLUTE MAXIMUM Drain-Source Voltage VDS 6 9V Channel Operating Temperature TCH Under any acceptable bias state 175°C Storage Temperature TSTG Non-Operating Storage -55°C to 150°C Notes: 1. 2. TAmbient = 22°C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause permanent damage to the device Information on the mounting of QFN style packages for optimum thermal performance is available on request. BIASING GUIDELINE: • The BA2250QFN module is a self-biased circuit, which employ an RF-bypassed source resistor to provide the negative Gate-Source bias voltage, and such circuits provide some temperature stabilization for the device TYPICAL MEASURED PERFORMANCE ON EVALUATION BOARD: S21 (dB) 18 15 12 9 6 3 0 0.5 Return Loss (dB) 0 -10 -20 1 1.5 2 2.5 Frequency (GHz) -40 0.5 3 NF (dB) 2.5 2.3 2.1 1.9 1.7 1.5 1.6 S11 -30 1.7 1.8 1.9 2 Frequency (GHz) 1 1.5 2 2.5 Frequency (GHz) S22 3 IIP3 (dBm) 30 29 28 27 26 25 1.7 2.1 1.8 1.9 Frequency (GHz) 2 Note: NF can be centred by optimising printed inductive elements 2 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FMA3019QFN Preliminary Datasheet v2.1 REFERENCE DESIGN (1.7-2GHZ): COMPONENT (1.7-2)GHZ C1,C2 1pF (0603) QFN 4x4 QFN package Eval board material 6x6 mm RF4 Board (0.8 mm thick 1/2 Ounce Cu on both sides and printed inductors) EVALUATION BOARD LAYOUT (DRAWINGS AVAILABLE ON REQUEST): VD1 C1 4x4QFN package SMA connector RFin RFout SMA connector C2 VD2 SIMPLIFIED MODULE SCHEMATIC: 2 FSS25_SSpHEMT 1 PORT P=1 SUBCKT ID=Coupler 2 1 INDQ INDQ 3 3 RES CAP 3 2 2 SUBCKT ID=Coupler 1 PORT P=2 1 INDQ FSS25_SSpHEMT 3 INDQ RES CAP 3 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FMA3019QFN Preliminary Datasheet v2.1 PACKAGE OUTLINE: (Dimensions in millimetres – mm) Pin identifier 0.4 4±0.05 SLP 24L 4X4 0.5 4±0.05 2.75 Bottom View Top View 0.9 0.5 side View PREFERRED ASSEMBLY INSTRUCTIONS: APPLICATION NOTES & DESIGN DATA: Please contact Filtronic Compound Semiconductors Ltd for further details. Application Notes and design data including Sparameters are available; please contact Filtronic Compound Semiconductors Ltd. HANDLING PRECAUTIONS: DISCLAIMERS: To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V) as defined in JEDEC Standard No. 22-A114. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. This product is not designed for use in any space based or life sustaining/supporting equipment. ORDERING INFORMATION: PART NUMBER DESCRIPTION FMA3019QFN-EB Packaged Balanced MMIC LNA Evaluation Board 4 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com