FMA219 Datasheet v3.0 X-BAND LNA MMIC FEATURES: • • • • • • LAYOUT: 7.0 – 11.0 GHz Operating Bandwidth 1.1 dB Noise Figure 21 dB Small-Signal Gain 12 dBm Output Power +3V Single Bias Supply DC De-coupled Input and Output Ports GENERAL DESCRIPTION: The FMA219 is a 2-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use over 7.0 to 11.0 GHz. The amplifier requires a single +3V supply and one off-chip component for supply de-coupling. Both the input and output ports are DC de-coupled. Grounding of the amplifier is provided by plated thru-vias to the bottom of the die, no additional ground is required. The amplifier is unconditionally stable over all load states (-45 to +85°C), and conditionally stable if the input port is open-circuited. TYPICAL APPLICATIONS: • • Low noise front end amplifiers General X-Band gain block ELECTRICAL SPECIFICATIONS: PARAMETER SYMBOL CONDITIONS MIN Operating Frequency Bandwidth BW VDD = +3 V IDD = IOP 7 Small Signal Gain S21 VDD = +3 V IDD = IOP 19 Operating Current IOP No RF input 50 Small Signal Gain Flatness ∆S21 Noise Figure NF 3rd Order Intermodulation Distortion IMD MAX UNITS 11 GHz 21 23 dB 65 80 mA VDD = +3 V IDD = IOP ±0.5 ±0.8 VDD = +3 V, IDD = IOP 1.1 1.4 Power at 1dB Compression P1dB VDD = +3 V VDD = +3 V, IDD = IOP POUT = +1.5 dBm SCL Input Return Loss S11 VDD = +3 V IDD = IOP Input Return Loss @ 9.5GHz + 10GHz S11(9.5+10GHz) VDD = +3 V IDD = IOP Output Return Loss S22 VDD = +3 V IDD = IOP Reverse Isolation S12 VDD = +3 V IDD = IOP 11.5 TYP dB -47 dBc 12.5 dBm -7 -3 dB -4 dB -16 -10 dB -40 -30 dB Note: TAMBIENT = 22°C 1 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FMA219 Datasheet v3.0 1 ABSOLUTE MAXIMUM RATING : PARAMETER SYMBOL TEST CONDITIONS ABSOLUTE MAXIMUM Supply Voltage VDD For any operating current 6V Supply Current IDD For VDD < 5V 100mA RF Input Power PIN For standard bias conditions 5dBm TSTG Non-Operating Storage -40°C to 150°C PTOT See De-Rating Note below 750mW Comp. Under any bias conditions 5dB ΘJC 750mW dissipation, heatsink temp 22°C 175°C/W Storage Temperature Total Power Dissipation 2,3 Gain Compression Thermal Resistance 4 Notes: 1. TAmbient = 22°C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause permanent damage to the device 2. Total Power Dissipation is defined as: PTOT = PDC + PIN – POUT where PDC = DC Bias Power, PIN = RF Input Power, POUT = RF Output Power Total Power Dissipation shall be de-rated above 22°C as follows: PTOT = (150 – TCASE ) / ΘJC W where TCASE = Temperature of the on the underside of the package or substrate 3. The quoted Thermal Resistance value is a worst-case figure assuming Gold/Tin die attach onto a Copper substrate. The use of epoxy die attach and substrate materials of lower thermal conductivity will increase the Thermal Resistance. Further information and assistance is available on request. 4. ΘJC increases linearly from 175°C/W at a TCASE of 22°C to 210°C/W at a TCASE of 145°C PAD LAYOUT: A PAD NAME DESCRIPTION PIN COORDINATES (µm) IN RFIN 102, 888 ROUT 1527, 843 Drain Voltage 1177, 103 B A C B VD Note: Co-ordinates are referenced from the bottom left hand corner of the die to the centre of bond pad opening C DIE SIZE (µm) DIE THICKNESS (µm) MIN. BOND PAD PITCH (µm) MIN. BOND PAD OPENING (µm x µm ) 1624 x 1624 100 >150 92 x 92 2 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FMA219 Datasheet v3.0 TYPICAL MEASURED PERFORMANCE ON WAFER: Note: Measurement Conditions TAMBIENT = 22°C unless otherwise stated RF PERFORMANCE (VDD = +3V, IDD = IOP) NOISE FIGURE FMA219BF NOISE FIGURE FMA219 FREQUENCY RESPONSE 1.4 1.3 20 1.2 S21 16 1.1 12 Noise Figure (dB) SSG, Input / Output Return Loss (dB) 24 8 4 0 -4 1.0 0.9 0.8 0.7 -8 -12 0.6 -16 0.5 -20 0.4 5 6 7 8 9 10 11 12 13 14 15 7 8 9 10 11 Frequency (GHz) Frequency [GHz] Note: Multiple traces show typical die variation across a 150mm (6") wafer. Effect of typical bond wire inductances (25µm dia. 1mm length, 2 each on input and output ports) is less than a 0.5dB decrease in S21 (@11GHz), and no measurable effect on noise figure. 3RD-ORDER INTERMODULATION POWER TRANSFER CHARACTERISTIC FMA219BF POWER TRANSFER CHARACTERISTIC IMPRODUCTSvs. INPUT POWERAT 9.0GHz 4.0 16.0 -15.00 Pout@7GHz 14.0 3.5 11.0 Pout@9GHz Pout Pout@11GHz Output Power (dBm) Comp@9GHz 10.0 2.5 Comp@11GHz 8.0 2.0 6.0 1.5 4.0 1.0 2.0 0.5 -21.0 -19.0 -20.00 Ou 9.0 tp ut Po 7.0 we r (d B 5.0 m) -17.0 -15.0 -13.0 -11.0 -9.0 -7.0 -5.0 IM Pr od uc -30.00 ts (d Bc -35.00 ) -25.00 3.0 1.0 -19.0 0.0 0.0 -23.0 Im3, dBc 3.0 Comp@7GHz Compression Point, (dB) 12.0 -40.00 -45.00 -17.0 -15.0 -3.0 -13.0 -11.0 -9.0 -7.0 Input Power (dBm) Pin (dBm) Note: Equivalent output IP3 performance exceeds 24dBm, input IP3 is typically ≥+2dBm. 3 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FMA219 Datasheet v3.0 S-PARAMETERS (Vdd= 3.0V; Idd= 72mA): FREQ-GHZ 1 1.245 1.49 1.735 1.98 2.225 2.47 2.715 2.96 3.205 3.45 3.695 3.94 4.185 4.43 4.675 4.92 5.165 5.41 5.655 5.9 6.145 6.39 6.635 6.88 7.125 7.37 7.615 7.86 8.105 8.35 8.595 8.84 9.085 9.33 9.575 9.82 10.065 10.31 10.555 10.8 11.045 11.29 11.535 11.78 12.025 12.27 12.515 12.76 13.005 13.25 13.495 13.74 13.985 14.23 14.475 14.72 14.965 15.21 15.455 15.7 15.945 S11MAG 0.974 0.968 0.963 0.959 0.958 0.96 0.965 0.973 0.958 0.934 0.95 0.968 0.988 1.007 1.035 1.069 0.951 0.945 1.021 1.034 1.004 0.927 0.807 0.658 0.504 0.367 0.268 0.227 0.24 0.283 0.337 0.388 0.435 0.478 0.514 0.545 0.572 0.593 0.608 0.618 0.626 0.63 0.627 0.622 0.615 0.604 0.589 0.575 0.561 0.544 0.524 0.506 0.488 0.469 0.451 0.434 0.418 0.397 0.378 0.361 0.348 0.333 S11ANG -106.62 -125.3 -141.67 -156.2 -169.47 178.08 166.1 154.02 141.23 131.54 121.28 109.94 97.76 84.85 70.66 54.25 28.15 29.43 10.5 -9.95 -31.51 -53.66 -75.49 -95.15 -111.08 -120.38 -119.71 -109.46 -99.07 -96.28 -99.06 -105.01 -111.94 -119.7 -127.72 -135.89 -143.88 -151.64 -159.12 -166.45 -173.69 179.26 172.58 166.17 160.01 154.16 148.47 142.93 137.71 133.07 128.55 124.13 119.86 115.96 112.04 108.26 105.67 102.87 99.79 96.52 93.94 92.37 S21MAG 0.068 0.079 0.092 0.096 0.1 0.104 0.112 0.132 0.148 0.171 0.251 0.367 0.535 0.778 1.151 1.771 2.926 2.061 3.203 4.536 6.024 7.547 8.943 10.049 10.815 11.268 11.522 11.667 11.737 11.775 11.806 11.826 11.843 11.844 11.852 11.846 11.827 11.781 11.726 11.649 11.557 11.432 11.269 11.091 10.896 10.683 10.437 10.175 9.907 9.609 9.318 9.005 8.698 8.368 8.03 7.686 7.342 7.02 6.696 6.365 6.054 5.737 S21ANG -115.04 -144.82 -165.53 168.17 145.39 123.02 99.66 73.18 45.25 31.12 16.56 0.21 -15.43 -30.42 -45.48 -62.52 -102.1 -105.45 -113.56 -131.16 -151.54 -173.34 164.5 142.79 122.24 103.33 86.07 70.26 55.61 41.94 28.96 16.67 4.87 -6.52 -17.58 -28.41 -39.01 -49.39 -59.5 -69.51 -79.38 -89.1 -98.68 -108.08 -117.3 -126.44 -135.33 -144.15 -152.79 -161.3 -169.65 -177.82 173.99 166.14 158.31 150.71 143.44 136.17 129.12 122.22 115.62 109.22 S12MAG 0 0 0.001 0.001 0 0.001 0.001 0.001 0.001 0.001 0.001 0.001 0.002 0.002 0.002 0.003 0.009 0.004 0.003 0.004 0.005 0.006 0.007 0.009 0.01 0.01 0.011 0.011 0.012 0.012 0.013 0.013 0.014 0.014 0.015 0.015 0.016 0.016 0.016 0.017 0.017 0.017 0.017 0.018 0.017 0.018 0.018 0.018 0.018 0.018 0.018 0.018 0.018 0.018 0.018 0.017 0.017 0.017 0.017 0.017 0.017 0.017 S12ANG 107.89 96.58 76.88 55.16 53.04 46.09 23.97 42.06 52.06 18.31 -4.07 3.18 -9.97 -30.48 -27.77 -49.44 -120.99 118.66 65.1 24.75 -1.95 -23.74 -45.39 -65.6 -82.43 -97.87 -113.2 -125.36 -137.61 -146.86 -157.24 -165.6 -174.09 178.62 170.72 163.57 157.72 150.1 143.61 136.33 128.78 123.33 117.93 111.68 107.41 101.82 96.04 91.31 85.97 82.16 77.5 73.7 70.16 64.24 61.86 57.54 54.93 52.45 48.74 45.51 41.29 40.04 S22MAG 0.74 0.641 0.568 0.514 0.474 0.445 0.421 0.402 0.386 0.37 0.356 0.342 0.328 0.312 0.296 0.281 0.305 0.259 0.222 0.19 0.156 0.12 0.085 0.055 0.032 0.013 0.003 0.018 0.033 0.049 0.065 0.081 0.098 0.114 0.129 0.144 0.158 0.171 0.183 0.193 0.202 0.208 0.213 0.217 0.22 0.222 0.225 0.229 0.235 0.244 0.254 0.266 0.282 0.3 0.321 0.344 0.367 0.388 0.409 0.429 0.45 0.471 S22ANG -117.91 -135.03 -147.1 -156.86 -164.33 -170.58 -176 179.01 174.19 169.6 165.04 160.47 155.92 151.5 147.18 143.68 140.84 124.29 118.27 111.03 103.14 95.2 88.64 84.7 83.47 87.06 -101.15 -91.84 -91.39 -91.83 -92.12 -93.19 -94.77 -96.84 -99.55 -102.25 -104.77 -107.68 -110.27 -112.92 -115.51 -117.39 -119.05 -120.38 -121.13 -121.27 -120.82 -120.02 -118.85 -117.85 -116.67 -115.65 -114.8 -114.41 -114.35 -115.16 -116.62 -118.17 -120.11 -121.83 -123.8 -125.99 4 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FMA219 Datasheet v3.0 RECOMMENDED ASSEMBLY SCHEMATIC: Input and output thin film substrates with 50Ω microstrip transmission lines. Substrate thickness 250µm or thinner is recommended. 75µm nominal gap on each side 25µm dia. Au wire (x2) on input and output ports, less than 1000µm length each Note: The supply de-coupling capacitor (150 pF recommended value) should be placed as close to the MMIC as practical. 150pF capacitor To +VDD 250µm Au ribbon recommended should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 0 (0-250 V) as defined in JEDEC Standard No. 22-A114. Further information on ESD control measures can be found in MIL-STD-1686 and MILHDBK-263. PREFERRED ASSEMBLY INSTRUCTIONS: GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. The back of the die is metallised and the recommended mounting method is by the use of conductive epoxy following the manufacturer’s recommended curing temperature. For eutectic 80/20 gold/tin solder, use a stage temperature of 280-300°C for a maximum time of 60s. Use forming gas (90%N2, 10% H2) for best results. APPLICATION NOTES & DESIGN DATA: Application Notes and design data including Sparameters are available on request DISCLAIMERS: Recommended lead bond technique is thermocompression wedge bonding with 25µm diameter wire. The bond tool force shall be 35-38g. Bonding stage temperature shall be 230-240°C, heated tool (150-160°C) is recommended. Ultrasonic bonding is not recommended. This product is not designed for use in any space based or life sustaining/supporting equipment. ORDERING INFORMATION: HANDLING PRECAUTIONS: PART NUMBER DESCRIPTION FMA219 Die To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions 5 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com