1MBI400S-120 IGBT Module 1200V / 400A 1 in one-package Features · High speed switching · Voltage drive · Low inductance module structure Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Unit Symbol Rating V VCES 1200 V VGES ±20 A Tc=25°C IC 600 A Tc=80°C 400 A Tc=25°C IC pulse 1200 A Tc=80°C 800 A -IC 400 A 1ms -IC pulse 800 W Max. power dissipation PC 3100 °C Operating temperature Tj +150 °C Storage temperature Tstg -40 to +125 Isolation voltage *1 V is AC 2500 (1min.) V N·m Screw torque Mounting *2 3.5 N·m Terminals *2 4.5 N·m Terminals *2 1.7 *1 : Aii terminals should be connected together when isolation test will be done *2 : Recommendable value : Mounting 2.5 to 3.5 N·m(M5 or M6) Terminal 3.5 to 4.5 N·m(M6), 1.3 to 1.7N·m(M4) Item Collector-Emitter voltage Gate-Emitter voltaga Collector Continuous current 1ms Equivalent Circuit Schematic C E G E Electrical characteristics (at Tj=25°C unless otherwise specified) Item Symbol Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage ICES IGES VGE(th) VCE(sat) Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Forward on voltage Cies Coes Cres ton tr tr(i) toff tf VF Reverse recovery time trr Turn-off time Characteristics Min. Typ. – – 5.5 – – – – – – – – – – – – – – – 7.2 2.3 2.8 48000 10000 8800 0.35 0.25 0.1 0.45 0.08 2.7 2.4 – Conditions Unit VGE=0V, VCE=1200V VCE=0V, VGE=±20V VCE=20V, IC=400mA Tc=25° C VGE=15V, IC=400A Tc=125°C VGE=0V V CE=10V f=1MHz V CC=600V mA µA V V Max. 4.0 0.8 8.5 2.6 – – – – 1.2 0.6 – 1.0 0.3 3.5 – 0.35 pF µs IC=400A VGE=±15V RG=1.8 ohm Tj=25°C Tj=125°C IF=400A IF=400A, VGE=0V V µs Thermal resistance characteristics Item Thermal resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f)*4 Characteristics Min. Typ. – – – – – 0.0125 Conditions Unit IGBT FWD the base to cooling fin °C/W °C/W °C/W Max. 0.04 0.12 – *4 : This is the value which is defined mounting on the additional cooling fin with thermal compound IGBT Module 1MBI400S-120 Characteristics Collector current vs. Collector-Emiiter voltage Tj= 25°C (typ.) Collector current vs. Collector-Emiiter voltage Tj= 125°C (typ.) 1000 1000 VGE= 20V 15V 12V VGE= 20V 15V 12V 800 Collector current : Ic [ A ] Collector current : Ic [ A ] 800 600 10V 400 600 10V 400 200 200 8V 8V 0 0 0 1 2 3 4 5 0 Collector - Emitter voltage : VCE [ V ] 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Collector current vs. Collector-Emiiter voltage VGE=15V (typ.) Collector-Emiiter voltage vs. Gate-Emitter voltage Tj= 25°C (typ.) 1000 10 Tj= 25°C Tj= 125°C 8 Collector - Emitter voltage : VCE [ V ] 800 Collector current : Ic [ A ] 1 600 400 200 6 4 Ic= 800A Ic= 400A 2 Ic=200A 0 0 1 2 3 4 5 5 15 20 Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emiiter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C Dynamic Gate charge (typ.) Vcc=600V, Ic=400A, Tj= 25°C 100000 Collector - Emitter voltage : VCE [ V ] Cies Capacitance : Cies, Coes, Cres [ pF ] 10 Collector - Emitter voltage : VCE [ V ] 10000 5000 Coes Cres 1000 1000 25 800 20 600 15 400 10 200 5 0 0 5 10 15 20 25 Collector - Emitter voltage : VCE [ V ] 30 35 25 0 1000 2000 Gate charge : Qg [ nC ] 3000 0 4000 Gate - Emitter voltage : VGE [ V ] 0 IGBT Module 1MBI400S-120 Switching time vs. Collector current (typ.) Vcc=600V, VGE=+-15V, Rg= 1.8ohm, Tj= 125°C Switching time vs. Collector current (typ.) Vcc=600V, VGE=+-15V, Rg= 1.8ohm, Tj= 25°C 1000 1000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] toff toff 500 ton tr 100 tf 50 500 ton tr tf 100 50 0 100 200 300 400 500 600 700 0 100 200 300 400 500 600 Collector current : Ic [ A ] Collector current : Ic [ A ] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=400A, VGE=+-15V, Tj= 25°C Switching loss vs. Collector current (typ.) Vcc=600V, VGE=+-15V, Rg=1.8ohm 700 100 5000 Eon(125°C) ton Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] toff tr 1000 500 100 tf 80 Eon(25°C) 60 Eoff(125°C) 40 Eoff(25°C) Err(125°C) 20 Err(25°C) 50 0.5 0 1 10 50 0 200 Gate resistance : Rg [ ohm ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=400A, VGE=+-15V, Tj= 125°C 600 800 Reverse bias safe operating area +VGE=15V, -VGE<=15V, Rg>=1.8ohm, Tj<=125°C 900 300 Eon 800 700 Collector current : Ic [ A ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] 400 Collector current : Ic [ A ] 200 100 Eoff 600 500 400 300 200 100 Err 0 0.5 0 1 10 Gate resistance : Rg [ ohm ] 50 0 200 400 600 800 1000 Collector - Emitter voltage : VCE [ V ] 1200 1400 IGBT Module 1MBI400S-120 Reverse recovery characteristics (typ.) Vcc=600V, VGE=+-15V, Rg=1.8ohm Forward current vs. Forward on voltage (typ.) 800 1000 Tj=125°C Tj=25°C Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] 600 400 200 0 trr(125°C) Irr(25°C) 100 trr(25°C) 10 0 1 2 3 4 Forward on voltage : VF [ V ] 0.5 FWD 0.1 0.05 IGBT 0.01 1E-3 0.001 0.01 0.1 Pulse width : Pw [ sec ] Outline Drawings, mm mass : 380g 0 100 200 300 400 500 Forward current : IF [ A ] Transient thermal resistance Thermal resistanse : Rth(j-c) [ °C/W ] Irr(125°C) 1 600 700