ETC CMT2301GM233

CMT2301
P-CHANNEL ENHANCEMENT MODE MOSFET
GENERAL DESCRIPTION
FEATURES
The CMT2301 is the P-Channel logic enhancement mode
-20V/-2.3A ,RDS(ON)=130 [email protected]=-4.5V
power field effect transistors are produced using high cell
-20V/-1.9A ,RDS(ON)=190 [email protected]=-2.5V
density, DMOS trench technology.
Super high density cell design for extremely low RDS(ON)
This high density process is especially tailored to minimize
Exceptional on-resistance and maximum DC current
on-state resistance.
capability
These devices are particularly suited for low voltage
SOT-23-3 package design
application such as cellular phone and notebook computer
power management and other battery powered circuits, and
low in-line power loss are needed in a very small outline
surface mount package.
APPLICATIONS
Power Management in Notebook
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
PIN CONFIGURATION
SYMBOL
SOT-23-3
D
Top View
3
SOURCE
DRAIN
GATE
G
S
1
2
P-Channel MOSFET
ORDERING INFORMATION
Part Number
Package
CMT2301M233
SOT-23-3
CMT2301GM233*
*Note: G : Suffix for Pb Free Product
SOT-23-3
2005/01/05
Champion Microelectronic Corporation
Page 1
CMT2301
P-CHANNEL ENHANCEMENT MODE MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain- to- Source Voltage
VDSS
-20
V
Gate-to-Source Voltage
VGSS
±8
V
TA=25℃
Continuous Drain Current(TJ=150℃)
-2.5
ID
TA=70℃
Pulsed Drain Current
IDM
Continuous Source Current(Diode Conduction)
IS
TA=25℃
Power Dissipation
PD
TA=70℃
Operating Junction Temperature
A
-1.5
-10
A
-1.6
A
1.25
W
0.8
TJ
150
℃
Storage Temperature Range
TSTG
-55/150
℃
Thermal Resistance-Junction to Ambient
RθJA
120
℃/W
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25℃.
CMT2301
Characteristic
Symbol
Min
Typ
Max
Units
Static
Drain-Source Breakdown Voltage
V(BR)DSS
(VGS = 0 V, ID = -250μA)
Gate Threshold Voltage
VGS(th)
(VDS = VGS, ID = -250μA)
Gate Leakage Current
-20
V
-0.45
-1.5
±100
IGSS
(VDS =0 V, VGS = ±8 V)
V
nA
Zero Gate Voltage Drain Current
IDSS
(VDS = -20 V, VGS = 0 V)
-1
(VDS = -20 V, VGS = 0 V, TJ = 55℃)
μA
-10
On-State Drain Current
(VDS ≤ -5 V, VGS = -4.5V)
ID(on)
(VDS ≤ -5 V, VGS = -2.5V)
-6
A
-3
Drain-Source On-Resistance
RDS(on)
(VGS = -4.5 V, ID = -2.8A)
(VGS = -2.5 V, ID = -2.0A)
0.105
0.13
0.145
0.19
Forward Transconductance (VDS = -5 V, ID = -2.8V)
gFS
6.5
Diode Forward Voltage (IS=-1.6A,VGS=0V)
VSD
-0.8
Ω
S
-1.2
V
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
(VDS = -6 V, VGS =-0V,
f = 1.0 MHz)
(VDD = -6 V,RL=6Ω
ID = -1.0 A,VGEN = -4.5 V,
Turn-Off Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
2005/01/05
RG = 6Ω)
(VDS = -6 V, ID = -2.8 A,
VGS =-4.5V)
Ciss
415
Coss
223
pF
Crss
87
td(on)
13
tr
36
60
td(off)
42
70
25
tf
34
60
Qg
5.8
10
Qgs
0.85
Qgd
1.7
Champion Microelectronic Corporation
ns
nC
Page 2
CMT2301
P-CHANNEL ENHANCEMENT MODE MOSFET
TYPICAL
2005/01/05
CHARACTERISTICS
Champion Microelectronic Corporation
Page 3
CMT2301
P-CHANNEL ENHANCEMENT MODE MOSFET
TYPICAL
2005/01/05
CHARACTERISTICS
Champion Microelectronic Corporation
Page 4
CMT2301
P-CHANNEL ENHANCEMENT MODE MOSFET
TYPICAL
2005/01/05
CHARACTERISTICS
Champion Microelectronic Corporation
Page 5
CMT2301
P-CHANNEL ENHANCEMENT MODE MOSFET
PACKAGE DIMENSION
SOT-23-3
D
3
b1
With Plating
c
c1
A
A1
E1
E
A2
b
b
Base Metal
b1
c
Section B-B
c1
D
E
1
2
e
e1
E1
b
L
L1
e
θ1
e1
θ
θ1
θ
A2
A
θ2
θ2
A1
L
2005/01/05
See Section B-B
L1
Champion Microelectronic Corporation
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CMT2301
P-CHANNEL ENHANCEMENT MODE MOSFET
IMPORTANT NOTICE
Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any
integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information
to verify, before placing orders, that the information being relied on is current.
A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or
environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for
use in life-support applications, devices or systems or other critical applications.
Use of CMC products in such applications is
understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the
customer should provide adequate design and operating safeguards.
HsinChu Headquarter
Sales & Marketing
5F, No. 11, Park Avenue II,
Science-Based Industrial Park,
HsinChu City, Taiwan
T E L : +886-3-567 9979
F A X : +886-3-567 9909
11F, No. 306-3, SEC. 1, Ta Tung Road,
Hsichih, Taipei Hsien 221, Taiwan
2005/01/05
T E L : +886-2-8692 1591
F A X : +886-2-8692 1596
Champion Microelectronic Corporation
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