CMT2301 P-CHANNEL ENHANCEMENT MODE MOSFET GENERAL DESCRIPTION FEATURES The CMT2301 is the P-Channel logic enhancement mode -20V/-2.3A ,RDS(ON)=130 mΩ@VGS=-4.5V power field effect transistors are produced using high cell -20V/-1.9A ,RDS(ON)=190 mΩ@VGS=-2.5V density, DMOS trench technology. Super high density cell design for extremely low RDS(ON) This high density process is especially tailored to minimize Exceptional on-resistance and maximum DC current on-state resistance. capability These devices are particularly suited for low voltage SOT-23-3 package design application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS Power Management in Notebook Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter PIN CONFIGURATION SYMBOL SOT-23-3 D Top View 3 SOURCE DRAIN GATE G S 1 2 P-Channel MOSFET ORDERING INFORMATION Part Number Package CMT2301M233 SOT-23-3 CMT2301GM233* *Note: G : Suffix for Pb Free Product SOT-23-3 2005/01/05 Champion Microelectronic Corporation Page 1 CMT2301 P-CHANNEL ENHANCEMENT MODE MOSFET ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Drain- to- Source Voltage VDSS -20 V Gate-to-Source Voltage VGSS ±8 V TA=25℃ Continuous Drain Current(TJ=150℃) -2.5 ID TA=70℃ Pulsed Drain Current IDM Continuous Source Current(Diode Conduction) IS TA=25℃ Power Dissipation PD TA=70℃ Operating Junction Temperature A -1.5 -10 A -1.6 A 1.25 W 0.8 TJ 150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 120 ℃/W ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25℃. CMT2301 Characteristic Symbol Min Typ Max Units Static Drain-Source Breakdown Voltage V(BR)DSS (VGS = 0 V, ID = -250μA) Gate Threshold Voltage VGS(th) (VDS = VGS, ID = -250μA) Gate Leakage Current -20 V -0.45 -1.5 ±100 IGSS (VDS =0 V, VGS = ±8 V) V nA Zero Gate Voltage Drain Current IDSS (VDS = -20 V, VGS = 0 V) -1 (VDS = -20 V, VGS = 0 V, TJ = 55℃) μA -10 On-State Drain Current (VDS ≤ -5 V, VGS = -4.5V) ID(on) (VDS ≤ -5 V, VGS = -2.5V) -6 A -3 Drain-Source On-Resistance RDS(on) (VGS = -4.5 V, ID = -2.8A) (VGS = -2.5 V, ID = -2.0A) 0.105 0.13 0.145 0.19 Forward Transconductance (VDS = -5 V, ID = -2.8V) gFS 6.5 Diode Forward Voltage (IS=-1.6A,VGS=0V) VSD -0.8 Ω S -1.2 V Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time (VDS = -6 V, VGS =-0V, f = 1.0 MHz) (VDD = -6 V,RL=6Ω ID = -1.0 A,VGEN = -4.5 V, Turn-Off Time Total Gate Charge Gate-Source Charge Gate-Drain Charge 2005/01/05 RG = 6Ω) (VDS = -6 V, ID = -2.8 A, VGS =-4.5V) Ciss 415 Coss 223 pF Crss 87 td(on) 13 tr 36 60 td(off) 42 70 25 tf 34 60 Qg 5.8 10 Qgs 0.85 Qgd 1.7 Champion Microelectronic Corporation ns nC Page 2 CMT2301 P-CHANNEL ENHANCEMENT MODE MOSFET TYPICAL 2005/01/05 CHARACTERISTICS Champion Microelectronic Corporation Page 3 CMT2301 P-CHANNEL ENHANCEMENT MODE MOSFET TYPICAL 2005/01/05 CHARACTERISTICS Champion Microelectronic Corporation Page 4 CMT2301 P-CHANNEL ENHANCEMENT MODE MOSFET TYPICAL 2005/01/05 CHARACTERISTICS Champion Microelectronic Corporation Page 5 CMT2301 P-CHANNEL ENHANCEMENT MODE MOSFET PACKAGE DIMENSION SOT-23-3 D 3 b1 With Plating c c1 A A1 E1 E A2 b b Base Metal b1 c Section B-B c1 D E 1 2 e e1 E1 b L L1 e θ1 e1 θ θ1 θ A2 A θ2 θ2 A1 L 2005/01/05 See Section B-B L1 Champion Microelectronic Corporation Page 6 CMT2301 P-CHANNEL ENHANCEMENT MODE MOSFET IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the customer should provide adequate design and operating safeguards. HsinChu Headquarter Sales & Marketing 5F, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan T E L : +886-3-567 9979 F A X : +886-3-567 9909 11F, No. 306-3, SEC. 1, Ta Tung Road, Hsichih, Taipei Hsien 221, Taiwan 2005/01/05 T E L : +886-2-8692 1591 F A X : +886-2-8692 1596 Champion Microelectronic Corporation Page 7