CHAMP CMT9926G

CMT9926G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GENERAL DESCRIPTION
FEATURES
‹
20V N-Channel Enhancement-Mode MOSFET
‹
Advanced trench process technology
‹
Vds=20V
‹
High Density Cell Design For Ultra Low On-Resistance
‹
RDS(ON)=30 mΩ (TYP.) , VGS @2.5V, [email protected]
‹
High Power and Current handing capacity
‹
RDS(ON)=22 mΩ (TYP.), VGS @4.5V, [email protected]
‹
Fully Characterized Avalanche Voltage and Current
‹
Ideal for Li ion battery pack applications
APPLICATIONS
‹
Power Management in Notebook
‹
Portable Equipment
‹
Battery Powered System
‹
DC/DC Converter
‹
Load Switch
‹
DSC
‹
LCD Display inverter
PIN CONFIGURATION
SYMBOL
8-PIN SOP (S08)
Top View
N-Channel MOSFET
ORDERING INFORMATION
Part Number
CMT9926G
Package
SOP-8
*Note: G : Suffix for Pb Free Product
2007/01/02 Rev1.0
Champion Microelectronic Corporation
Page 1
CMT9926G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
ABSOLUTE MAXIMUM RATINGS
(TA=25℃ unless otherwise notes)
Rating
Symbol
Value
Unit
Drain- to- Source Voltage
VDSS
20
V
Gate-to-Source Voltage
VGSS
±12
V
Continuous Drain Current (TJ=150℃) (TA=25℃)
ID
6
A
Pulsed Drain Current
IDM
20
A
TA=25℃
PD
2.0
W
TA=75℃
PD
1.3
W
TJ
-55 to150
℃
TSTG
-55 to 150
℃
Rthj-a
62.5
℃/W
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Thermal Resistance Junction-ambient (PCB mount)
Note : 1. Repetitive Rating : Pulse width limited by the Maximum junction temperation
2. 1-in2 2oz Cu PCB board
3. Guaranteed by design ; not subject to production testing
2007/01/02 Rev1.0
Champion Microelectronic Corporation
Page 2
CMT9926G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ unless otherwise notes)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
20
-
-
V
VGS=4.5V, ID=6A
-
22
28
mΩ
VGS=2.5V, ID=5.2A
-
30
40
mΩ
0.6
-
-
V
BVDSS
Drain-Source Breakdown Voltage
RDS(ON)
Static Drain-Source On-Resistancem
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
gfs
Forward Transconductance
VDS=10V, ID=6A
7
13
-
S
IDSS
Drain-Source Leakage Current
VDS=20V, VGS=0V
-
-
1
uA
IGSS
Gate-Source Forward Leakage
VGS=12V
-
-
100
nA
Gate-Source Reverse Leakage
VGS=-12V
-
-
-100
nA
Qg
Total Gate Charge
-
4.86
-
nC
Qgs
Gate-Source Charge
-
0.92
-
nC
Qgd
Gate-Drain ("Miller") Charge
ID=6A
VDS=10V
VGS=4.5V
-
1.4
-
nC
td(on)
Turn-on Delay Time
-
8.1
-
ns
tr
Rise Time
-
9.95
-
ns
td(off)
Turn-off Delay Time
-
21.85
-
ns
tf
Fall Time
VDD=10V
ID=1A
RG=6Ω
VGEN=4.5V
-
5.35
-
ns
Ciss
Input Capacitance
-
562
-
pF
Coss
Output Capacitance
-
106
-
pF
Crss
Reverse Transfer Capacitance
VGS=0V
VDS=8V
f=1.0MHz
-
75
-
pF
Min.
Typ.
Max.
Units
-
-
1.2
V
-
-
1.7
A
VGS=0V, ID=-250uA
Source-Drain Diode
Symbol
Parameter
VSD
Diode Forward Voltage
Is
Max. Diode Forward Current
Test Conditions
Tj=25℃ , IS=1.7A, VGS=0V
Notes:
Pulse test : Pulse width <300us , duty cycle <2%.
2007/01/02 Rev1.0
Champion Microelectronic Corporation
Page 3
CMT9926G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
TYPICAL
CHARACTERISTICS
2007/01/02 Rev1.0
Champion Microelectronic Corporation
Page 4
CMT9926G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
2007/01/02 Rev1.0
Champion Microelectronic Corporation
Page 5
CMT9926G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
PACKAGE DIMENSION
8-PIN SOP (S08)
2007/01/02 Rev1.0
Champion Microelectronic Corporation
Page 6
CMT9926G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
IMPORTANT NOTICE
Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any
integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information
to verify, before placing orders, that the information being relied on is current.
A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or
environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for
use in life-support applications, devices or systems or other critical applications.
Use of CMC products in such applications is
understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the
customer should provide adequate design and operating safeguards.
HsinChu Headquarter
Sales & Marketing
5F, No. 11, Park Avenue II,
Science-Based Industrial Park,
HsinChu City, Taiwan
7F-6, No.32, Sec. 1, Chenggong Rd., Nangang
District, Taipei City 115, Taiwan
T E L : +886-3-567 9979
F A X : +886-3-567 9909
T E L : +886-2-2788 0558
F A X : +886-2-2788 2985
2007/01/02 Rev1.0
Champion Microelectronic Corporation
Page 7