HiPerFETTM Power MOSFETs IXFR 15N80Q VDSS ISOPLUS247TM Q Class ID25 = 800 V = 13 A = 0.60 W (Electrically Isolated Back Surface) RDS(on) N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances trr £ 250 ns Preliminary data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 800 800 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C TC = 25°C, Note 1 TC = 25°C 13 60 15 A A A EAR EAS TC = 25°C TC = 25°C 30 1.0 mJ J dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W 5 V/ns PD TC = 25°C 250 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 2500 V~ 5 g TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s VISOL 50/60 Hz, RMS t = 1 min Weight ISOPLUS 247TM G D Isolated back surface* G = Gate S = Source D = Drain * Patent pending Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to tab capacitance(<50pF) • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Fast intrinsic Rectifier Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 3 mA 800 VGS(th) VDS = VGS, ID = 4mA 2.0 IGSS VGS = ±20 V, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 7.5A Note 2 TJ = 25°C TJ = 125°C IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved V 4.5 V ±100 nA 25 1 mA mA 0.60 W • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC motor control Advantages • Easy assembly • Space savings • High power density 98590A (7/00) 1-2 IXFR 15N80Q Symbol Test Conditions gfs VDS = 10 V; ID = 7.5A Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Note 2 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) 8 16 S 4300 pF 360 pF 60 pF 18 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 7.5A 27 ns td(off) RG = 1 W (External), 53 ns tf 16 ns Qg(on) 90 nC 20 nC 30 nC Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 7.5A Qgd RthJC 0.50 0.15 RthCK Source-Drain Diode K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 15 A ISM Repetitive, Note 1 60 A VSD IF = Is, 100A, VGS = 0 V, Note 2 1.5 V 250 ns t rr QRM IF = Is, -di/dt = 100 A/ms, VR = 100 V IRM 0.8 mC 7.5 A ISOPLUS 247 (IXFR) OUTLINE 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection Dim. Millimeter Min. Max. A 4.83 5.21 A1 2.29 2.54 A2 1.91 2.16 b 1.14 1.40 1.91 2.13 b1 b2 2.92 3.12 C 0.61 0.80 D 20.80 21.34 E 15.75 16.13 e 5.45 BSC L 19.81 20.32 L1 3.81 4.32 Q 5.59 6.20 R 4.32 4.83 S 13.21 13.72 T 15.75 16.26 U 1.65 3.03 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 .520 .540 .620 .640 .065 .080 Note: 1. Pulse width limited by TJM 2. Pulse test, t £ 300 ms, duty cycle d £ 2 % © 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2