IXZ12210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications VDSS = 500 V ID25 = 10 A 125V (operating) 175MHz Note: All data is per the IXZ1210N50L single ended device unless otherwise Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 Tc = 25°C 10 A IDM Tc = 25°C, pulse width limited by TJM 60 A IAR Tc = 25°C 16 A EAR Tc = 25°C TBD dv/dt IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 5 V/ns >200 V/ns Per Device PDC PDHS Tc = 25°C, Derate 6.0W/°C above 25°C PDAMB Tc = 25°C mJ Total 180 360 W 150 300 W 10 W RthJC 0.83 0.42 C/W RthJHS 1.00 0.50 C/W min. typ. VDSS VGS = 0 V, ID = 4 ma VGS(th) VDS = VGS, ID = 250µΑ IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8VDSS VGS=0 RDS(on) VGS = 20 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% 1.0 gfs VDS = 50 V, ID = 0.5ID25, pulse test 3.8 500 3.5 4.83 -55 TJM -55 Tstg TL Weight 1.6mm(0.063 in) from case for 10 s • IXYS RF Low Capacitance Z-MOSTM V TJ = 25C TJ =125C TJ Features max. 6.5 V ±100 nA 50 1 µA mA Process • Very low insertion inductance (<2nH) Advantages • High Performance RF Package • Easy to mount—no insulators needed • Standard RF Package Ω S +175 °C +175 °C + 175 °C 300 °C 4 g (1) Thermal specifications are for the package, not per transistor IXZ12210N50L RF Power MOSFET Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) min. Ciss Coss VGS = 0 V, VDS = 0.8 VDSS(MAX), f = 1 MHz Crss Td(off) 383 404 pF 48 60 105 pF 6 11 13 pF VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 1 Ω (External) Toff VHF COMMUNICATIONS Gps min. 16 ns 4 ns 5 ns 6 ns typ. Gps(1) 60 Drain Efficiency VDD= 50V, Pout=200W, f=175MHz % TBD min. VDD=120V, POUT=475W, F=128MHz db TBD Load Mismatch VDD= 150V, Pout=300W, f=175MHz 3T MRI max. TBD VDD= 50V, Pout=200W, f=175MHz Drain Efficiency VDD= 50V, Pout=200W, f=175MHz max. 366 Td(on) Ton typ. typ. max. TBD db TBD % IXZ12210N50L RF Power MOSFET IXZ12210N50L Capacitance Verses Vds Capacitance in pF 10000 Ciss 1000 Coss 100 Crss 10 1 0 50 100 150 200 250 VDS 300 350 400 450 IXZ12210N50L RF Power MOSFET Doc #dsIXZ12210N50L REV X1 © 2006 IXYS RF IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045 6,404,065 6,583,505 6,710,463 6,727,585 A IXYS Company 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: [email protected] Web: http://www.ixysrf.com