JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors S9012M TRANSISTOR C WBFBP-03B DESCRIPTION PNP Epitaxial Silicon Transistor (1.2×1.2×0.5) unit: mm FEATURES Complementary to S9013M Excellent hFE linearity 1. BASE TOP B E C 2. EMITTER 3. COLLECTOR APPLICATION 150mW Output Amplifier of Potable Radios in Class B Push-pull Operation. For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM,Note book PC, etc.) BACK E B MARKING: 2T1 C 2T1 B E MAXIMUM RATINGS TA=25℃ unless otherwise noted Value Units VCBO Symbol Collector-Base Voltage Parameter -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Collector Dissipation 150 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Symbol unless Test otherwise conditions Collector-base breakdown voltage V(BR)CBO IC= -100μA, Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO specified） MIN TYP MAX -40 V IC= -1mA, IB=0 -25 V IE=-100μA, IC=0 -5 V IE=0 Collector cut-off current ICBO VCB=-40 V ,IE=0 -0.1 Collector cut-off current ICEO VCE=-20V ,IB=0 -0.1 Emitter cut-off current IEBO VEB= -5V , IC=0 DC current gain hFE VCE=-1V, IC=-50mA Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) Transition frequency Collector output capacitance fT Cob UNIT -0.1 120 μA μA μA 400 IC=-500mA, IB= -50mA -0.6 V IC=-500mA, IB= -50mA -1.2 V VCE=-6V, IC= -20mA f=30MHz VCB=-10V,IE=0,f=1MHz 150 MHz 5 pF CLASSIFICATION OF hFE Rank L H J Range 120-200 200-350 300-400 Typical Characteristics S9012M Sym bol A A1 b b1 b2 D E D2 E2 e L L1 L2 k z D im e n s io n s In M illim e t e r s M in . M ax. 0 .4 5 0 0 .5 5 0 0 .0 1 0 0 .0 9 0 0 .1 7 0 0 .2 7 0 0 .2 7 0 0 .3 7 0 0 .2 5 0 R E F . 1 .1 5 0 1 .2 5 0 1 .1 5 0 1 .2 5 0 0 .4 7 0 R E F . 0 .8 1 0 R E F . 0 .8 0 0 T Y P . 0 .2 8 0 R E F . 0 .2 3 0 R E F . 0 .1 5 0 R E F . 0 .3 0 0 R E F . 0 .0 9 0 R E F . D im e n s io n s In In c h e s M in . M ax. 0 .0 1 8 0 .0 2 2 0 .0 0 0 0 .0 0 4 0 .0 0 7 0 .0 1 1 0 .0 1 1 0 .0 1 5 0 .0 1 0 R E F . 0 .0 4 5 0 .0 4 9 0 .0 4 5 0 .0 4 9 0 .0 0 2 R E F . 0 .0 3 2 R E F . 0 .0 3 2 T Y P . 0 .0 1 1 R E F . 0 .0 0 9 R E F . 0 .0 0 6 R E F . 0 .0 1 2 R E F . 0 .0 0 4 R E F .