JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors KSA928A TRANSISTOR（ PNP ） TO-92L FEATURE Audio power amplifier Complement to Application 1.EMITTER 2.COLLECTOR 3.BASE 123 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -2 A PC Collector Dissipation 1 W TJ, Tstg Junction and Storage Temperature -55 to +150 ℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Symbol unless Test otherwise conditions specified） MIN TYPE MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -100μA ， IE=0 -30 V Collector-emitter breakdown voltage V(BR)CEO IC= -10 mA , -30 V Emitter-base breakdown voltage V(BR)EBO IE= -1mA， IC=0 -5 V Collector cut-off current ICBO VCB= -30 V, IE=0 -0.1 μA Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 μA DC current gain hFE VCE=-2 V, IC= -500mA Collector-emitter saturation voltage VCE(sat) IC= -1.5 A, IB= -0.03A -2 V VBE IC= -500 mA, VCE= -2V -1 V fT VCE= -2 V, IC= -500mA 120 MHz Cob VCB=-10V,IE=0,f=1MHz 48 pF Base-emitter voltage Transition frequency Collector output capacitance IB=0 100 CLASSIFICATION OF hFE Rank Range O Y 100-200 160-320 320