HY75N10T 100V / 75A N-Channel Enhancement Mode MOSFET 100V, RDS(ON)=13mW@VGS=10V, ID=30A Features TO-220AB • Low On-State Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current • Specially Desigened for DC-DC Converter, Off-line UPS, Automotive System, Solenoid and Motor Control • In compliance with EU RoHs 2002/95/EC Directives Mechanical Information 1 • Case: TO-220AB Molded Plastic Gate • Terminals : Solderable per MIL-STD-750,Method 2026 3 2 Drain 3 Source 2 1 Marking & Ordering Information TYPE MARKING PACKAGE PACKING HY75N10T 75N10T TO-220AB 50PCS/TUBE Absolute Maximum Ratings (TC=25°C unless otherwise specified ) Parameter Symbol Value Units Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS +20 V ID 75 A IDM 300 A PD 136 0.91 W EAS 300 mJ TJ, TSTG -55 to +175 ℃ Symbol Value Units Junction-to-Case Thermal Resistance RqJC 1.1 ℃/W Junction-to-Ambient Thermal Resistance RqJA 62.5 ℃/W Continuous Drain Current TC=25℃ Pulsed Drain Current 1) Maximum Power Dissipation Derating Factor TC=25℃ Avalanche Energy with Single Pulse, L=0.3mH Operating Junction and Storage Temperature Range Note : 1. Maximum DC current limited by the package Thermal Characteristics Parameter COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN、FUNCTIONS AND RELIABILITY WITHOUT NOTICE REV.1, 8-May-2012 PAGE.1 HY75N10T Electrical Characteristics ( TC=25, Unless otherwise noted ) Parameter Symbol Test Condition Min. Typ. Max. Units Drain-Source Breakdown Voltage BVDSS VGS=0V、ID=250uA 100 - - V Gate Threshold Voltage VGS(th) VDS=VGS、ID=250uA 2 3 4 V Drain-Source On-State Resistance RDS(ON) VGS=10V、ID=30A - 10 13 mW Zero Gate Voltage Drain Current IDSS VDS=80V、VGS=0V - - 1 uA Gate Body Leakage Current IGSS VGS=+20V、VDS=0V - - 100 nA - 156 - - 26.8 - Static Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd - 34 - Turn-On Delay Time td(on) - 32.2 - - 16.8 - - 62 - - 42 - - 4600 - - 320 - Turn-On Rise Time Turn-Off Delay Time tr td(off) Turn-Off Fall Time tf Input Capacitance Ciss VDS=50V，ID=30A VGS=10V VDD=50V，ID=30A VGS=10V，RG=3.6W VDS=30V，VGS=0V f=1.0MHZ nC ns Output Capacitance Coss Reverse Transfer Capacitance Crss - 120 - Gate Resistance Rg - 1.6 - W pF Source-Drain Diode Max. Diode Forwad Voltage IS - - - 75 A Diode Forward Voltage VSD IS=30A、VGS=0V - 0.84 1.4 V Reverse Recovery Time trr - 72 - ns Reverse Recovery Charge Qrr VGS=0V、IS=30A di/dt=100A/us - 210 - uC NOTE : Pulse Test : Pulse Width ≦ 300us, duty cycle ≦ 2% REV.1, 8-May-2012 PAGE.2 HY75N10T Typical Characteristics Curves ( TC=25℃, unless otherwise noted) 18 160 RDS(ON) - On Resistance(mW) ID - Drain-to-Source Current (A) 200 6.0V VGS= 10V~ 7.0V 120 5.0V 80 40 4.5V 0 14 12 10 8 6 0 5 10 15 20 0 20 60 80 100 ID - Drain Current (A) Fig.1 Output Characteristric Fig.2 On-Resistance vs Drain Current 2.4 26 RDS(ON) - On-Resistance (Normalized) ID =30A 22 18 14 10 VGS =10 V ID =30A 2 1.6 1.2 0.8 0.4 6 4 5 6 7 8 9 -50 10 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (oC) VGS - Gate-to-Source Voltage (V) Fig.4 On-Resistance vs Junction Temperature Fig.3 On-Resistance vs Gate to Source Voltage 6000 12 f = 1MHz VGS = 0V 5000 VGS - Gate-to-Source Voltage (V) C - Capacitance (pF) 40 VDS - Drain-to-Source Voltage (V) 30 RDS(ON) - On Resistance(mW) VGS=10V 16 Ciss 4000 3000 2000 1000 Coss Crss 8 6 4 2 0 0 0 VDS=50V ID =30A 10 10 20 30 40 0 20 40 60 80 100 120 140 VDS - Drain-to-Source Voltage (V) Qg - Gate Charge (nC) Fig.5 Capacitance Characteristic Fig.6 Gate Charge Characteristic REV.1, 8-May-2012 160 PAGE.3 HY75N10T Typical Characteristics Curves ( TC=25℃, unless otherwise noted) 1.3 160 BVDSS - Breakdown Voltage (Normalized) 140 Power Rating 120 100 80 60 40 ID = 250mA 1.2 1.1 1 0.9 20 0.8 0 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (oC) TJ - Junction Temperature (oC) Fig.7 Power Derating Curve Fig.8 Breakdown Voltage vs Junction Temperature 1000 IS - Source Current (A) VGS = 0V 100 TJ = 125oC 10 25oC 1 -55oC 0.1 0.01 0.3 0.5 0.7 0.9 1.1 1.3 VSD - Source-to-Drain Voltage (V) Fig.9 Body Diode Forward Voltage Characteristic REV.1, 8-May-2012 PAGE.4