A-POWER AP4578GM-HF

AP4578GM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
D2
D1 D2
D1 D1
D1
▼ Lower Gate Charge
▼ Fast Switching Performance
N-CH BVDSS
D2
D2
▼ RoHS Compliant
SO-8
SO-8
60V
RDS(ON)
64mΩ
ID
G2
G2
S2
G1 S2
S1 G1
S1
4.5A
P-CH BVDSS
-60V
RDS(ON)
Description
125mΩ
ID
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
-3A
D2
D1
G2
G1
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
S2
S1
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Units
P-channel
60
-60
V
±20
±20
V
Continuous Drain Current
3
4.5
-3
A
Continuous Drain Current
3
3.6
-2.4
A
20
-20
A
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
TSTG
TJ
2.0
W
Storage Temperature Range
-55 to 150
℃
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Unit
62.5
℃/W
1
200805191
AP4578GM-HF
o
N-CH Electrical [email protected]=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
60
-
-
V
-
0.05
-
V/℃
VGS=10V, ID=4A
-
55
64
mΩ
VGS=4.5V, ID=2A
-
65
80
mΩ
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=4A
-
7
-
S
IDSS
Drain-Source Leakage Current
VDS=60V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70oC)
VDS=48V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=4A
-
9
17
nC
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=48V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4
-
nC
2
td(on)
Turn-on Delay Time
VDS=30V
-
9
-
ns
tr
Rise Time
ID=1A
-
5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
22
-
ns
tf
Fall Time
RD=30Ω
-
7
-
ns
Ciss
Input Capacitance
VGS=0V
-
730
1170
pF
Coss
Output Capacitance
VDS=25V
-
80
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
60
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.8
2.7
Ω
Min.
Typ.
IS=1.7A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=4A, VGS=0V
-
28
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
39
-
nC
2
AP4578GM-HF
P-CH Electrical [email protected] j=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient
RDS(ON)
Min.
Typ.
-60
-
-
V
Reference to 25℃,ID=-1mA
-
-0.04
-
V/℃
VGS=-10V, ID=-3A
-
100
125
mΩ
VGS=-4.5V, ID=-2A
-
120
150
mΩ
VGS=0V, ID=-250uA
2
Static Drain-Source On-Resistance
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-2A
-
5
-
S
IDSS
Drain-Source Leakage Current
VDS=-60V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=70 C)
VDS=-48V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=-3A
-
12
20
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-48V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
6
-
nC
VDS=-30V
-
10
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
33
-
ns
tf
Fall Time
RD=30Ω
-
6
-
ns
Ciss
Input Capacitance
VGS=0V
-
905
1450
pF
Coss
Output Capacitance
VDS=-25V
-
90
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
75
-
pF
Rg
Gate Resistance
f=1.0MHz
-
12
18
Ω
Min.
Typ.
IS=-1.7A, VGS=0V
-
-
-1.2
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=-3A, VGS=0V
-
36
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
55
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in 2 copper pad of FR4 board ; 135℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP4578GM-HF
N-Channel
25
25
T A = 25 o C
10V
7.0V
5.0V
4.5V
20
ID , Drain Current (A)
ID , Drain Current (A)
20
10V
7.0V
5.0V
4.5V
T A =150 o C
15
10
5
15
10
V G =3.0V
5
V G =3.0V
0
0
0
1
2
3
4
5
0
1
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
4
5
1.6
I D =4A
V G =10V
ID=2A
T A =25 o C
70
1.4
Normalized RDS(ON)
RDS(ON) (mΩ )
3
Fig 2. Typical Output Characteristics
75
65
60
55
1.2
1.0
-6.3
-5
0.8
50
0.6
2
4
6
8
10
-50
Fig 3. On-Resistance v.s. Gate Voltage
3
1.5
Normalized VGS(th) (V)
2
T j =150 o C
50
100
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
4
2
0
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
IS(A)
2
V DS , Drain-to-Source Voltage (V)
T j =25 o C
1
0
1
0.5
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
T j ,Junction Temperature (
100
o
150
C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP4578GM-HF
N-Channel
f=1.0MHz
12
1000
C iss
ID=4A
V DS = 48 V
8
C (pF)
VGS , Gate to Source Voltage (V)
10
6
100
C oss
C rss
4
2
10
0
0
4
8
12
16
1
20
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthja)
100
10
100us
ID (A)
9
V DS , Drain-to-Source Voltage (V)
1ms
1
10ms
100ms
0.1
T A =25 o C
Single Pulse
1s
DC
0.01
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 135℃/W
Single Pulse
0.001
0.1
1
10
100
1000
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
25
VG
V DS =5V
ID , Drain Current (A)
20
T j =25 o C
QG
T j =125 o C
4.5V
15
QGS
QGD
10
5
Charge
Q
0
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
5
AP4578GM-HF
P-Channel
20
20
-10V
-7.0V
-5.0V
-4.5V
-ID , Drain Current (A)
15
o
T A =150 C
-ID , Drain Current (A)
o
T A = 25 C
10
V G = - 3.0V
5
-10V
-7.0V
-5.0V
-4.5V
15
10
V G = - 3.0V
5
0
0
0
1
2
3
4
5
6
7
0
1
-V DS , Drain-to-Source Voltage (V)
2
3
4
5
6
7
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
170
2.0
I D = -3 A
V G = - 10V
1.8
I D = -2 A
T A =25 o C
160
Normalized RDS(ON)
RDS(ON) (mΩ)
1.6
150
140
1.4
1.2
1.0
0.8
0.6
130
2
4
6
8
-50
10
0
50
100
150
o
-V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3
Normalized -VGS(th) (V)
2
-IS(A)
2
T j =25 o C
T j =150 o C
1
1.5
1
0.5
0
0
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6
AP4578GM-HF
P-Channel
f=1.0MHz
10000
I D =-3A
V DS =-48V
10
8
1000
C iss
C (pF)
-VGS , Gate to Source Voltage (V)
12
6
4
C oss
100
C rss
2
0
10
0.0
5.0
10.0
15.0
20.0
25.0
1
5
9
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthja)
100
10
100us
-ID (A)
13
-V DS , Drain-to-Source Voltage (V)
1ms
1
10ms
100ms
0.1
T A =25 o C
Single Pulse
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
1s
Rthja = 135℃/W
DC
0.01
0.1
Duty factor=0.5
1
10
100
0.001
1000
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
20
VG
-ID , Drain Current (A)
V DS =-5V
15
T j =25 o C
QG
T j =150 o C
-4.5V
QGS
10
QGD
5
Charge
Q
0
0
2
4
6
8
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
7
ADVANCED POWER ELECTRONICS CORP.
Package Outline : SO-8
D
8
7
Millimeters
6
5
E1
1
2
3
E
4
e
SYMBOLS
MIN
NOM
MAX
A
1.35
1.55
1.75
A1
0.10
0.18
0.25
B
0.33
0.41
0.51
c
0.19
0.22
0.25
D
4.80
4.90
5.00
E1
3.80
3.90
4.00
E
5.80
6.15
6.50
L
0.38
0.71
1.27
θ
0.00
4.00
8.00
e
B
1.27 TYP
A
A1
DETAIL A
L
θ
1.All Dimension Are In Millimeters.
2.Dimension Does Not Include Mold Protrusions.
c
DETAIL A
Part Marking Information & Packing : SO-8
Part Number
4578GM
YWWSSS
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
If last "S" is numerical letter : Rohs product
If last "S" is English letter : HF & Rohs
8