ISAHAYA INA6005AC1

INA6005AC1
PRELIMINARY
Notice:This is not a final specification
Some parametric are subject to change.
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
OUTLINE DRAWING
INA6005AC1 is a silicon PNP transistor.
2.8
1.90
0.95 0.95
FEATURE
・Super mini package for easy mounting
・High voltage VCEO=-400V
1.5
0.65
0.4
0.65
It is designed with high voltage.
UNIT:mm
2.8
①
②
③
APPLICATION
0.13
0~0.1
0.8
1.1
DC/DC convertor, High voltage switching
Terminal Connector
①:Base
②:Emitter
③:Collector
JEITA:SC-59
JEDEC: Similar to TO-236
MAXIMUM RATING(Ta=25℃)
SYMBOL
PARAMETER
RATING
UNIT
-400
V
-7
V
Collector to Emitter voltage
-400
V
Collector current
-100
mA
PC
Collector dissipation(Ta=25℃)
200
mW
Tj
Junction temperature
+150
℃
Tstg
Storage temperature
-55~+150
℃
VCBO
Collector to Base voltage
VEBO
Emitter to Base voltage
VCEO
I
C
MARKING
Type Name
ALA
ELECTRICAL CHARACTERISTICS(Ta=25℃)
SYMBOL
V(BR)CBO
V(BR)EBO
V(BR)CEO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
PARAMETER
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E saturation voltage
Gain bandwidth product
Collector output capacitance
TEST CONDITIONS
I C=-50μA,I E=0mA
I E=-50μA,I C=0mA
I C=-1mA,R BE=∞
VCB=-400V,I E =0mA
VEB=-6V,I C=0mA
VCE=-10V,I C=-10mA
I C=-20mA,I B=-2mA
VCE=-20V,I E=10mA,f=100MHz
VCB=-10V,I E=0mA,f=1MHz
ISAHAYA ELECTRONICS CORPORATION
MIN
-400
-7
-400
82
-
LIMITS
TYP
MAX
-1
-1
200
-0.6
65
5.5
-
UNIT
V
V
V
μA
μA
V
MHz
pF
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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mishap.
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Mar.2013