DHG 20 C 600QB advanced V RRM = 600 V I FAV = 2x 10 A t rr = 35 ns Sonic-FRD High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode 1 2 3 Part number (Marking on product) DHG 20 C 600QB Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) TO-3P ● Industry standard outline - compatible with TO-247 ● Epoxy meets UL 94V-0 ● RoHS compliant Ratings Symbol Definition VRRM max. repetitive reverse voltage IR reverse current VF Conditions forward voltage I FAV average forward current VF0 rF threshold voltage slope resistance min. TVJ = 25 °C thermal resistance junction to case 600 V TVJ = 25 °C 15 µA TVJ = 125 °C 1.5 mA I F = 10 A I F = 20 A TVJ = 25 °C 2.35 V I F = 10 A I F = 20 A TVJ = 125 °C 2.20 V V rectangular, d = 0.5 T C = 100 °C 10 A T VJ = 150 °C 1.20 93 V mΩ 1.80 K/W V TVJ Ptot total power dissipation I FSM max. forward surge current I RM max. reverse recovery current t rr reverse recovery time CJ junction capacitance EAS non-repetitive avalanche energy I AR repetitive avalanche current VA = 1.5·VR typ.; f = 10 kHz 150 °C = 25 °C -55 70 W t p = 10 ms (50 Hz), sine TVJ = 45 °C 100 A I F = 10 A; TVJ = 25 °C TVJ = 125 °C 4 A A VR = 400 V TVJ = 25 °C TVJ = 125 °C 35 ns ns VR = 300 V; f = 1 MHz TVJ = 25 °C I AS = TVJ = 25 °C TC -diF /dt = 200 A/µs A; L = 100 µH * Data according to IEC 60747and per diode unless otherwise specified pF tbd mJ tbd A 0614 © 2006 IXYS all rights reserved Unit VR = 600 V virtual junction temperature IXYS reserves the right to change limits, conditions and dimensions. max. VR = 600 V for power loss calculation only R thJC typ. DHG 20 C 600QB advanced Ratings Symbol Definition Conditions I RMS RMS current per pin* R thCH thermal resistance case to heatsink MD mounting torque FC mounting force with clip T stg storage temperature min. typ. max. Unit A 0.25 K/W 0.8 1.2 Nm 20 120 N -55 150 °C Weight 5 g * Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Outlines TO-3P SYM MIN MAX MIN MAX A A1 A2 b b2 b4 c D D1 E E1 e L L1 ØP ØP1 S © 2006 IXYS all rights reserved * Data according to IEC 60747and per diode unless otherwise specified 0614 IXYS reserves the right to change limits, conditions and dimensions.