PolarHVTM Power MOSFET IXTH 22N50P IXTQ 22N50P IXTV 22N50P IXTV 22N50PS N-Channel Enhancement Mode Avalanche Rated = 500 V = 22 A ≤ 270 mΩ Ω VDSS ID25 RDS(on) TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient ±30 ±40 V V ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM 22 66 A A IAR EAR EAS TC = 25°C TC = 25°C TC = 25°C 22 30 750 A mJ mJ dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω 10 V/ns PD TC = 25°C 350 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C G TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque Weight TO-3P PLUS220 & PLUS220SMD 5.5 4 TO-3P (IXTQ) G D (TAB) S PLUS220 (IXTV) G D D (TAB) S PLUS220SMD (IXTV...S) g g Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 μA 500 VGS(th) VDS = VGS, ID = 250μA 3.0 IGSS VGS = ±30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V G S G = Gate S = Source TJ = 125°C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % D (TAB) D = Drain TAB = Drain Features V z 5.5 V ±10 nA 5 50 μA μA z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages 270 mΩ z z z © 2006 IXYS All rights reserved (TAB) S 1.13/10 Nm/lb.in. Symbol Test Conditions (TJ = 25°C, unless otherwise specified) RDS(on) D Easy to mount Space savings High power density DS99351E(03/06) IXTH 22N50P IXTQ 22N50P IXTV 22N50P IXTV 22N50PS Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS= 20 V; ID = 0.5 ID25, pulse test 20 S 2630 pF 310 pF Crss 27 pF td(on) 25 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 27 ns td(off) RG = 10 Ω (External) 75 ns tf 21 ns Qg(on) 50 nC 16 nC 18 nC Qgs 1 2 3 Terminals: 1 - Gate 3 - Source Dim. VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC RthCS RthCS TO-247 (IXTH) Outline 0.35 K/W (TO-247) (TO-3P) Source-Drain Diode 0.21 0.21 K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 16 A ISM Repetitive 55 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % 1.5 V trr IF = 22 A, -di/dt = 100 A/μs, VGS = 0 V 400 Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC TO-3P (IXTQ) Outline ns IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXTH 22N50P IXTQ 22N50P IXTV 22N50P IXTV 22N50PS Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25ºC @ 25ºC 22 55 VGS = 10V 20 16 40 14 35 12 6V 10 8V 45 I D - Amperes I D - Amperes 18 VGS = 10V 50 8V 7V 8 6 7V 30 25 6V 20 15 10 4 5V 2 5 0 5V 0 0 1 2 3 4 5 6 0 7 3 6 9 Fig. 3. Output Characteristics 22 18 21 24 27 30 3.1 VGS = 10V 20 2.8 7V VGS = 10V R D S ( o n ) - Normalized 18 16 I D - Amperes 15 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature @ 125ºC 6V 14 12 10 8 5V 6 4 2.5 2.2 I D = 22A 1.9 1.6 I D = 11A 1.3 1 0.7 2 0 0.4 0 2 4 6 8 10 12 14 -50 16 -25 V D S - Volts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to Fig. 6. Drain Current vs. Case Tem perature 0.5 ID25 Value vs. ID 24 3.1 2.8 VGS = 10V 20 TJ = 125º C 2.5 I D - Amperes R D S ( o n ) - Normalized 12 V D S - Volts V D S - Volts 2.2 1.9 1.6 1.3 TJ = 25º C 16 12 8 4 1 0 0.7 0 5 10 15 20 25 30 35 I D - Amperes © 2006 IXYS All rights reserved 40 45 50 55 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXTH 22N50P IXTQ 22N50P IXTV 22N50P IXTV 22N50PS Fig. 8. Transconductance Fig. 7. Input Adm ittance 35 40 30 35 20 15 TJ = 125º C 10 25º C g f s - Siemens I D - Amperes TJ = -40º C 30 25 25 125º C 20 15 25º C 10 -40º C 5 5 0 0 3.5 4 4.5 5 5.5 6 6.5 7 0 5 10 15 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 25 30 35 40 Fig. 10. Gate Charge 10 70 9 VDS = 250V 8 I D = 11A 7 I G = 10mA 60 VG S - Volts 50 I S - Amperes 20 I D - Amperes 40 30 TJ = 125º C 6 5 4 3 20 TJ = 25º C 2 10 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0 5 10 15 V S D - Volts 20 25 30 35 40 45 50 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area Fig. 11. Capacitance 100 10000 f = 1MHz C iss I D - Amperes Capacitance - picoFarads R DS(on) Limit 1000 C oss 25µs 100µs 10 1ms 100 TJ = 150ºC DC 10ms TC = 25ºC C rss 1 10 0 5 10 15 20 25 30 35 40 V D S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V D S - Volts 1000 IXTH 22N50P IXTQ 22N50P IXTV 22N50P IXTV 22N50PS Fig. 13. Maxim um Transient Therm al Resistance R ( t h ) J C - ºC / W 1.00 0.10 0.01 0.1 1 10 100 1000 Pulse Width - milliseconds PLUS220 (IXTV) Outline © 2006 IXYS All rights reserved PLUS220SMD (IXTV_S) Outline