OPA8950HN Infrared LED Chip High Speed / N Side-Up GaAlAs/GaAlAs 1. Material Substrate GaAlAs (P Type) Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage Min VF(1) Typ Max Unit Condition V IF=10uA V IF=50mA V IR=10uA 1.1 VF(2) 1.6 Reverse Voltage VR Power PO 6.5 mW IF=50mA λP 888 nm IF=50mA ∆λ 45 nm Wavelength 4 IF=50mA Tp=400ns, Rise Time Tr 25 ns Duty=50%, Fall Time Tf 20 ns IFP=50mA ※ Note : LED chip is mounted on TO-18 gold header without resin coating. 4. Mechanical Data (a) Emission Area (b) Bottom Area (c) Bonding Pad (d) Chip Thickness (e) Junction Height --------------------- 18.7mil x 18.7mil --------------------- 19.7mil x 19.7mil --------------------- double pad --------------------7mil --------------------4.6mil (b) (d) N Side Electrode AUK Corp. Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea Tel. +82 63 839 1111 Fax. +82 63 835 8259 www.auk.co.kr P Epi (a) N Epi (e) P Side Electrode