Infrared LED Chip OPA9437EU GaAlAs/GaAs 1. Material Substrate GaAs (P Type) Epitaxial Layer GaAlAs(N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy (Au/Sn Eutectic Metal) Parameter Symbol Min 3. Electro-Optical Characteristics Forward Voltage VF Reverse Voltage VR 8 Power PO 9 λP Wavelength Typ Max Unit Condition 1.3 1.45 V IF=30mA V IR=10uA 13 mW IF=100mA 920 nm IF=20mA ∆λ 45 nm IF=20mA ※ Note : Power is measured by Sorter E/T system with bare chip. (b) Bottom Area (c) Bonding Pad (d) Chip Thickness (e) Junction Height --------------------- 14mil x --------------------- 15mil x --------------------- 130um --------------------- 8.2mil 2mil --------------------- (b) (d) (e) (a) N Side Electrode AUK Corp. Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea Tel. +82 63 839 1111 Fax. +82 63 835 8259 N Epi (c) www.auk.co.kr 14mil 15mil P Epi 4. Mechanical Data (a) Emission Area P Side Electrode