Infrared LED Chip OPA9425AL GaAs/GaAs 1. Material Substrate GaAs Epitaxial Layer GaAs (N Type) (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Aluminum Alloy Parameter Symbol Min 3. Electro-Optical Characteristics Forward Voltage VF VR Reverse Voltage Power PO A B C D E F Max Unit Condition 1.3 1.45 V IF=20mA V IR=10uA mW IF=20mA nm IF=20mA 8 1.14 1.22 1.30 1.38 1.46 1.54 λP Wavelength Typ 940 ∆λ IF=20mA 45 nm ※ Note : LED Chip is mounted on TO-18 gold header without resin coati 4. Mechanical Data (a) Emission Area ----------------------------- 9mil x (b) Bottom Area ----------------------------- 10mil x (c) Bonding Pad ----------------------------- 130um 10mil (d) Chip Thickness ------------------------------(e) Junction Height ------------------------------- 6.5mil (b) (d) P Side Electrode AUK Corp. Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea Tel. +82 63 839 1111 Fax. +82 63 835 8259 N Epi P Epi (a) Substrate (e) (c) www.auk.co.kr 9mil 10mil N Side Electrode