Point Light Source LED Chip OPA6530SR GaAsP/GaAs 1. Material Substrate GaAs (N Type) Epitaxial Layer GaAsP (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Aluminum Alloy 3. Electro-Optical Characteristics Parameter Symbol Min Forward Voltage VF Typ Max Unit Condition 1.68 V IF=10mA Reverse Voltage VR 5 V IR=10uA PO 0.4 mW IF=10mA nm IF=10mA Power Wavelength λd 650 ∆λ 35 nm IF=10mA ※ Note : LED Chip is mounted on TO-18 gold header without resin coat 4. Mechanical Data (a) Emission Area (b) Bottom Area (c) Bonding Pad (d) Chip Thickness ----------------------- 8.3mil x 8.3mil ----------------------- ####### ##### ----------------------- 100um 7mil ----------------------- AUK Corp. Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea Tel. +82 63 839 1111 Fax. +82 63 835 8259 www.auk.co.kr