KODENSHI OPA8736H

OPA8736H
Infrared LED Chip
High Speed / N Side-Up
GaAlAs/GaAlAs
1. Material
Substrate
GaAlAs (P Type) Removed
Epitaxial Layer GaAlAs (N/P Type)
2. Electrode
N(Cathode) Side Gold Alloy
P(Anode) Side Gold Alloy
3. Electro-Optical
Characteristics
Parameter
Symbol
Forward Voltage
Min
Typ
Unit
Condition
V
IF=10uA
V
IF=50mA
V
IR=10uA
20
mW
IF=50mA
878
nm
IF=50mA
VF(1)
1.1
VF(2)
1.65
Reverse Voltage
VR
5
Power
PO
16
λP
Wavelength
Max
1.8
∆λ
45
nm
IF=50mA
Rise Time
Tr
28
ns
Fall Time
Tf
18
ns
※ Note : Power is measured by Sorter E/T system with bare chip.
(b) Bottom Area
(c) Bonding Pad
(d) Chip Thickness
(e) Junction Height
--------------------- 11.6mil x 11.6mil
--------------------- 12.6mil x 12.6mil
--------------------130um
--------------------8mil
--------------------3.5mil
(b)
(d)
(e)
(a)
N Side Electrode
AUK Corp.
Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea
Tel. +82 63 839 1111 Fax. +82 63 835 8259
www.auk.co.kr
N Epi
(c)
P Epi
4. Mechanical Data (a) Emission Area
P Side Electrode