STT500GKXX!T
Thyristor-Thyristor Modules
Dimensions in mm (1mm=0.0394")
STT500GK08!T
STT500GK12!T
STT500GK14!T
STT500GK16!T
STT500GK18!T
Symbol
VRSM
VDSM
V
!900
1300
1500
1700
1900
Test Conditions
ITRMS, IFRMS TVJ=TVJM
ITAVM, IFAVM TC=85oC; 180o sine
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
2
TVJ=45oC
VR=0
TVJ=TVJM
VR=0
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
(di/dt)cr
re
c
i dt
tif
ITSM, IFSM
TVJ=45oC
VR=0
TVJ=TVJM
VR=0
VRRM
VDRM
V
!800
1200
1400
1600
1800
ier
Type
TVJ=TVJM
f=50Hz, tp=200us
VD=2/3VDRM
IG=1A
diG/dt=1A/us
Maximum Ratings
Unit
785
785
500
A
16000
18000
13000
14400
A
1125000
1062000
845000
813000
A 2s
repetitive, IT=960A
100
non repetitive, IT=ITAVM
500
TVJ=TVJM;
VDR=2/3VDRM
RGK= ; method 1 (linear voltage rise)
A/us
1000
V/us
120
60
W
PGAV
20
W
VRGM
10
V
TVJ
TVJM
Tstg
-40...+140
140
-40...+125
Si
(dv/dt)cr
PGM
VISOL
TVJ=TVJM
IT=ITAVM
50/60Hz, RMS
_
IISOL<1mA
tp=30us
tp=500us
t=1min
t=1s
Mounting torque (M6)
Terminal connection torque (M8)
Md
Weight
P1
Typical
2009 Sirectifier Electronics Technology Corp.
o
C
3000
3600
V~
4.5-7/40-60
11-13/97-115
Nm/lb.in.
1"!"
!!!!g
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STT500GKXX!T
Thyristor-Thyristor Modules
Symbol
Test Conditions
IRRM
TVJ=TVJM; VR=VRRM
VT!
o
IT!=1500A; TVJ=25 C
VTO
For power-loss calculations only (TVJ=TVJM)
Characteristic Values
Unit
30
mA
1."5
V
0.8
V
0.38
rT
o
m
TVJ=25 C
TVJ=-40oC
2
3
V
VD=6V;
TVJ=25oC
TVJ=-40oC
300
400
mA
VGD
TVJ=TVJM;
VD=2/3VDRM
0.25
V
IGD
TVJ=TVJM;
VD=2/3VDRM
IGT
o
IL
TVJ=25 C; tp=30us; VD=6V
IG=1A; diG/dt=1A/us
IH
TVJ=25oC; VD=6V; RGK=
o
TVJ=25 C; VD=1/2VDRM
IG=1A; diG/dt=1A/us
tq
TVJ=TVJM; IT=500A; tp=200us; -di/dt=10A/us
VR=100V; dv/dt=50V/us; VD=2/3VDRM
RthJC
DC current
RthJK
DC current
tif
tgd
ier
VD=6V;
VGT
typ.
10
mA
400
4
00
mA
300
mA
2
us
350
us
0.072
K/W
0.096
K/W
12.7
mm
Creeping distance on surface
dA
Creepage distance in air
9.6
mm
a
Maximum allowable acceleration
50
m/s2
FEATURES
re
c
dS
Si
* International
national standard package
pa kage
# $%&&'()base
base plate
* *('++,(')$%-./0.)1'02-%3%45
* 6,+6/()1'(78-/3
* Isolation voltage
oltage 3600 V~
* UL file NO.310749
* RoH! compliant"#
P2
APPLICATIONS
APPLICA
ADVANTAGES
* Motor control, softstarter
* Power converter
* Heat and temperature control for
industrial furnaces and chemical
processes
* Lighting control
* Solid state switches
* Simple mounting
* Improved temperature and power
)
cycling
* Reduced protection circuits
2009 Sirectifier Electronics Technology Corp.
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STT500GKXX!T
STT500.. Series
R thJC (DC) = 0.065 K/W
120
110
Conduction Angle
100
30°
80
60°
90°
120°
70
180°
60
0
100
200
300
400
500
Average On-state Current (A)
600
130
120
110
100
80
70
RMS Limit
300
Conduction Angle
200
STT500.. Series
Per Junction
TJ = 130°C
100
0
0
100
200
300
400
5
500
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
P3
90°
9
0°
120°
1
20°
180°
0
DC
900
100 200 300 400 500 600 700 800 90
Fig. 2 - Current Ratings Characteristics
2009 Sirectifier Electronics Technology Corp.
)
400
60°
60
1000
Maximum Average On-state Power Loss (W
500
re
c
600
30°
Average On-state Current (A)
Si
)
Maximum Average On-state Power Loss (W
180°
120°
90°
60°
30°
Conduction Period
90
Fig. 1 - Current Ratings Characteristics
700
STT500.. Series
R thJC (DC) = 0.065 K/W
ier
90
Maximum Allowable Case Temperature (
°C)
130
tif
Maximum Allowable Case Temperature (
°C)
Thyristor-Thyristor Modules
900
DC
180°
120°
90°
60°
30°
800
700
600
500
400 RMS Limit
Conduction Period
300
STT500.. Series
Per Junction
TJ = 130°C
200
100
0
0
100 200 300 400 500 600 700 800
Average On-state Current (A)
Fig. 4 - On-state Power Loss Characteristics
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STT500GKXX!T
18000
16000
At Any Rated Load Condition And With
Rated V RRM Applied Following Surge.
Initial TJ = 130°C
15000
14000
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
13000
12000
10000
9000
STT500.. Series
Per Junction
8000
7000
1
10
100
14000
12000
10000
8000
STT500.. Series
Per Junction
6000
0.01
0.1
tif
Number Of Equal Amplitude Half Cycle Current Pulses (N)
16000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial TJ = 130°C
No Voltage Reapplied
Rated V RRMReapplied
ier
11000
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A
)
Thyristor-Thyristor Modules
TJ = 130°C
STT500.. Series
Per Junction
100
0.5
1
1.5
2
2.5
3
3.5
4
4.5
4
Instantaneous On-state Voltage (V)
Fig. 9 - On-state Voltage Drop Characteristics
P4
2009 Sirectifier Electronics Technology Corp.
0.1
STT500.. Series
Per Junction
(K/W)
thJC
Transient Thermal Impedance Z
re
c
Si
Instantaneous On-state Current (A)
TJ = 25°C
1000
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 5 - Maximum Non-Repetitive Surge Current
10000
1
0.01
Steady St ate Value:
RthJC = 0.065 K/W
(DC Operation)
0.001
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Fig. ! - Thermal Impedance ZthJC Characteristics
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STT500GKXX!T
09
Rt
0.
A
hS
=
W
K/
W
K/
750
700
180°
650
120°
0.
16
90°
600
K
/W
60°
550
0.
2
30°
K/
500 Conduction Angle
W
450
400
0 .3
K/ W
350
0.4
300
K/ W
250
0. 6
K/ W
200
150
STT500.. Series
100
Per Module
TJ = 130°C
50
0
0 100 200 300 400 500 600 700 800
0
20
12
0.
07
0.
W
K/
-D
ta
el
ier
R
40
60
80
100
120
tif
Maximum Total On-state Power Loss (W )
Thyristor-Thyristor Modules
Maximum Allowable Ambient Temperature (°C)
Total RMS Output Current (A)
Fig. 9 - On-state Power Loss Characteristics
K/
W
R
Si
lta
2 x STT500.. Series
Single Phase Bridge
Connected
T = 130°C
0.12
e
0.0
8
-D
0.0
5K
/W
1000
500
K/
W
W
K/
1500
0.
03
01
0.
2000
0.
02
=
re
c
2500
A
hS
180°
(Sine)
180°
(Rect)
Rt
Maximum Total Power Loss (W)
3000
K/ W
K/ W
0.2 K
/W
J
0
0
200
400
600
800
Total Output Current (A)
0
1000
20
40
60
80
100
120
Maximum Allowable Ambient Tem perature (°C)
Fig. 10 - On-state Power Loss Characteristics
P5
2009 Sirectifier Electronics Technology Corp.
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STT500GKXX!T
Thyristor-Thyristor Modules
R
4000
120°
(Rect)
3500
0.0
2K
/W
0.0
3K
/W
0.05
K/ W
0.
3 x STT500.. Series 08 K/ W
Three Phase Bridge
0.2 K/ W
Connected
T J = 130°C
3000
2500
=0
.01
K/
W
-D
elt
a
R
ier
2000
1500
1000
500
250
500
tif
0
0
A
thS
Maximum Total Power Loss (W)
4500
750
1000
12500 1500
20
40
60
80
100
120
(°C)
Maximum Allowable Ambient Temperature (°C
Total Output Current (A)
100
re
c
Fig. 11 - On-state Power Loss Characteristics
Si
IGD
0.1
0.001
0.01
tp = 4ms
tp = 2ms
tp = 1ms
tp = 0.66ms
(a)
Tj=-40 °C
VGD
Tj=25
°C
1
(1) PGM = 10W,
(2) PGM = 20W,
(3) PGM = 40W,
(4) PGM = 60W,
(b)
Tj=130
°C
Instantaneous Gate Voltage (V)
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1
µs
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
10
tr<=1 µs
(1) (2) (3) (4)
STT500.. Series
0.1
Frequency Limited by PG(AV)
1
10
100
Instantaneous Gate Current (A)
Fig. 12 - Gate Characteristics
P6
2009 Sirectifier Electronics Technology Corp.
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