SYNC-POWER SPC1016S56RGB

SPC1016
N & P Pair Enhancement Mode MOSFET
DESCRIPTION
The SPC1016 is the Dual P-Channel enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
‹
N-Channel
20V/0.65A,RDS(ON)=380mΩ@VGS=4.5V
20V/0.55A,RDS(ON)=450mΩ@VGS=2.5V
20V/0.45A,RDS(ON)=800mΩ@VGS=1.8V
‹
P-Channel
-20V/0.45A,RDS(ON)= 0.52Ω@VGS=-4.5V
-20V/0.35A,RDS(ON)= 0.70Ω@VGS=-2.5V
-20V/0.25A,RDS(ON)= 0.95Ω@VGS=-1.8V
‹
Super high density cell design for extremely low
RDS (ON)
‹
Exceptional on-resistance and maximum DC
current capability
‹
SOT-563 (SC-89-6L) package design
PIN CONFIGURATION( SOT-563 / SC-89-6L)
PART MARKING
2009/06/20 Ver.2
Page 1
SPC1016
N & P Pair Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
Symbol
Description
1
S1
Source 1
2
G1
3
D2
Gate 1
Drain 2
4
S2
Source 2
5
G2
6
D1
Gate 2
Drain1
ORDERING INFORMATION
Part Number
Package
Part
Marking
SPC1016S56RG
SOT-563
C
SPC1016S56RGB
SOT-563
C
※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 )
※ SPC1016S56RG : Tape Reel ; Pb – Free
※ SPC1016S56RGB : Tape Reel ; Pb – Free ; Halogen -Free
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Typical
Parameter
Symbol
Unit
N-Channel
P-Channel
Drain-Source Voltage
VDSS
20
-20
V
Gate –Source Voltage
VGSS
±12
±12
V
0.65
-0.45
0.45
-0.35
IDM
1.0
IS
0.3
-1.0
-0.3
Continuous Drain Current(TJ=150℃)
TA=25℃
TA=80℃
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
2009/06/20 Ver.2
TA=25℃
TA=70℃
ID
PD
TJ
TSTG
0.35
0.19
-55/150
-55/150
A
A
A
W
℃
℃
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SPC1016
N & P Pair Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Symbol
V(BR)DSS
VGS(th)
Gate Leakage Current
IGSS
Zero Gate Voltage Drain
Current
IDSS
On-State Drain Current
ID(on)
Drain-Source On-Resistance RDS(on)
Forward Transconductance
gfs
Diode Forward Voltage
VSD
Conditions
VGS=0V,ID= 250uA
VGS=0V,ID=-250uA
VDS=VGS,ID=250uA
VDS=VGS,ID=-250uA
VDS=0V,VGS=±12V
VDS=0V,VGS=±12V
VDS= 20V,VGS=0V
VDS=-20V,VGS=0V
VDS= 20V,VGS=0V TJ=55℃
VDS=-20V,VGS=0V TJ=55℃
VDS≥ 4.5V,VGS = 5V
VDS≤ -4.5V,VGS =-5V
VGS=4.5V,ID=0.65A
VGS=-4.5V,ID=-0.45A
VGS=2.5V,ID=0.55A
VGS=-2.5V,ID=-0.35A
VGS=1.8V,ID=0.45A
VGS=-1.8V,ID=-0.25A
VDS=10V,ID=0.4A
VDS=-10V,ID=-0.25A
IS= 0.15A,VGS =0V
IS=-0.15A,VGS =0V
Min.
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Typ
20
-20
0.35
-0.35
Max. Unit
1.0
-0.8
±100
±100
1
-1
10
-10
0.7
-0.7
V
nA
uA
A
0.26
0.42
0.32
0.58
0.42
0.75
1.0
0.4
0.8
-0.8
0.38
0.52
0.45
0.70
0.80
0.95
1.2
1.5
0.2
0.3
0.3
0.35
5
5
8
15
10
8
1.2
1.4
1.5
2.0
Ω
S
1.2
-1.2
V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
td(on)
Turn-On Time
tr
td(off)
Turn-Off Time
tf
2009/06/20 Ver.2
N-Channel
VDS=10V,VGS=4.5V, ID≡0.6A
P-Channel
VDS=-10V,VGS=-4.5V ,ID≡-0.6A
N-Channel
VDD=10V,RL=10Ω ,
ID≡0.5A
VGEN=4.5V ,RG=6Ω
P-Channel
VDD=-10V,RL=10Ω ,
ID≡-0.4A
VGEN=-4.5V ,RG=6Ω
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
nC
10
10
15
25
18
15
2.8
1.8
nS
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SPC1016
N & P Pair Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS ( N-Channel )
2009/06/20 Ver.2
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SPC1016
N & P Pair Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS ( N-Channel )
2009/06/20 Ver.2
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SPC1016
N & P Pair Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS ( N-Channel )
2009/06/20 Ver.2
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SPC1016
N & P Pair Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS ( P-Channel )
2009/06/20 Ver.2
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SPC1016
N & P Pair Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS ( P-Channel )
2009/06/20 Ver.2
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SPC1016
N & P Pair Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS ( P-Channel )
2009/06/20 Ver.2
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SPC1016
N & P Pair Enhancement Mode MOSFET
SOT-563 PACKAGE OUTLINE
2009/06/20 Ver.2
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SPC1016
N & P Pair Enhancement Mode MOSFET
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SYNC Power Corporation
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NanKang District (NKSP), Taipei, Taiwan 115
Phone: 886-2-2655-8178
Fax: 886-2-2655-8468
©http://www.syncpower.com
2009/06/20 Ver.2
Page 11