SPN12T20 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN12T20 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN12T20 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS High Frequency Small Power Switching for MB/NB/VGA Network DC/DC Power System Load Switch FEATURES 200V/12A,RDS(ON)=210mΩ@VGS= 10V High density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-252 package design PIN CONFIGURATION TO-252 PART MARKING 2013/01/09 Ver.1 Page 1 SPN12T20 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description 1 G Gate 2 S Source 3 D Drain ORDERING INFORMATION Part Number Package Part SPN12T20T252RGB TO-252 ※ SPN12T20T252RGB : Tape Reel ; Pb – Free ; Halogen - Free Marking SPN12T20 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 200 V Gate –Source Voltage VGSS ±20 V Continuous Drain Current(TJ=150℃) TA=25℃ TA=70℃ ID 18 12 A IDM 32 A PD 40 W TJ -55/150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 100 ℃/W Pulsed Drain Current Power Dissipation TA=25℃ Operating Junction Temperature 2013/01/09 Ver.1 Page 2 SPN12T20 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. V(BR)DSS VGS=0V,ID=250uA 200 Typ Max. 3.8 5.0 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage VGS(th) VDS=VGS,ID=250uA 2.0 V Gate Leakage Current IGSS VDS=0V,VGS=±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS=160V,VGS=0V 2 uA On-State Drain Current ID(on) VDS≥5V,VGS =10V 18 A 0.21 Ω Drain-Source On-Resistance RDS(on) VGS= 10V,ID=12A Forward Transconductance gfs VDS=5V,ID=12A Diode Forward Voltage VSD IS=1A,VGS =0V 0.18 8.5 S 1 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Time Turn-Off Time 2013/01/09 Ver.1 VDS=160V,VGS=10V ID= 12A VDS=25V,VGS=0V f=1MHz td(on) tr td(off) tf VDD=100V, ID=12A, VGEN=10V, RG=3.3Ω 17.6 25 7.6 11 3.7 5.2 1000 1400 110 155 2.4 3.5 9.4 19 23 41 18.4 37 15.6 21.8 Page 3 nC pF nS SPN12T20 N-Channel Enhancement Mode MOSFET TO-252 PACKAGE OUTLINE 2013/01/09 Ver.1 Page 4 SPN12T20 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com 2013/01/09 Ver.1 Page 5