SPN80T10 N-Channel Enhancement Mode

SPN80T10
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN80T10 is the N-Channel logic enhancement mode
power field effect transistor which is produced using super
high cell density DMOS trench technology. The SPN80T10
has been designed specifically to improve the overall
efficiency of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been
optimized for low gate charge, low RDS(ON) and fast
switching speed.
FEATURES
100V/85A, RDS(ON)=7.1mΩ@VGS= 10V

High density cell design for extremely low RDS (ON)

Exceptional on-resistance and maximum DC current
capability

TO-220-3L/TO-263-2L/TO-262-3L package design

APPLICATIONS
 Powered System
 DC/DC Converter
 Load Switch
PIN CONFIGURATION
TO-220
TO-263-2L TO-262-3L
PART MARKING
2015/01/07 Ver.2
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SPN80T10
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
Symbol
Description
1
G
Gate
2
D
Drain
3
S
Source
ORDERING INFORMATION
Part Number
Package
Part
SPN80T10T220TGB
TO-220-3L
SPN80T10T262RGB
TO-263-2L
SPN80T10K262TGB
TO-262-3L
※ SPN80T10T220TGB : Tube ; Pb – Free ; Halogen - Free
※ SPN80T10T262RGB : Tape&Reel ; Pb – Free ; Halogen - Free
※ SPN80T10K262TGB : Tube ; Pb – Free ; Halogen - Free
Marking
SPN80T10
SPN80T10
SPN80T10
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
100
V
Gate –Source Voltage
VGSS
±25
V
Continuous Drain Current(TJ=150℃)
TA=25℃
TA=70℃
ID
85
60
A
Pulsed Drain Current
IDM
300
A
Power Dissipation @ TA=25℃
PD
166
W
Operating Junction Temperature
TJ
-55/150
℃
Storage Temperature Range
TSTG
-55/150
℃
Thermal Resistance-Junction to Ambient
RθJA
62
℃/W
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SPN80T10
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Min.
V(BR)DSS VGS=0V,ID=250uA
100
Typ
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
VGS(th) VDS=VGS,ID=250uA
Gate Leakage Current
IGSS
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-Resistance
2.0
VDS=0V,VGS=±25V
VDS=80V,VGS=0V
VDS=80V,VGS=0V
TJ=125℃
±100
25
gfs
VDS=10V,ID=40A
Diode Forward Voltage
VSD
IS=30A,VGS =0V
nA
uA
100
RDS(on) VGS= 10V,ID=40A
Forward Transconductance
V
4.0
7.1
mΩ
75
S
1.3
V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-On Time
Turn-Off Time
2015/01/07 Ver.2
VDS=80V,VGS=10V
ID= 40A
VDS=25,VGS=0V
f=1MHz
td(on)
tr
td(off)
tf
115
180
20
nC
48
6000
9600
pF
550
300
21
VDD=50V,RL=1Ω
ID≡30A,VGEN=10V
RG=1.66Ω
58
nS
41
15
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SPN80T10
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2015/01/07 Ver.2
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SPN80T10
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2015/01/07 Ver.2
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SPN80T10
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2015/01/07 Ver.2
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SPN80T10
N-Channel Enhancement Mode MOSFET
TO-220 PACKAGE OUTLINE
2015/01/07 Ver.2
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SPN80T10
N-Channel Enhancement Mode MOSFET
TO-263-2L PACKAGE OUTLINE
2015/01/07 Ver.2
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SPN80T10
N-Channel Enhancement Mode MOSFET
TO-262-3L PACKAGE OUTLINE
Millimeter
2015/01/07 Ver.2
Inch
Symbol
Min
Max
Min
Max
A
4.4
4.8
0.173
0.189
b
0.76
1
0.030
0.039
D
8.6
9
0.339
0.354
c
0.36
0.5
0.014
0.020
E
9.8
10.4
0.386
0.409
c2
1.25
1.45
0.049
0.057
b2
1.17
1.47
0.046
0.058
L
13.25
14.25
0.522
0.561
e
2.54REF
0.1REF
L2
1.27REF
0.05REF
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SPN80T10
N-Channel Enhancement Mode MOSFET
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2015/01/07 Ver.2
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