SYNC-POWER SPN8910S89TGB

SPN8910
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN8910 is the N-Channel logic enhancement mode
power field effect transistor which is produced using super
high cell density DMOS trench technology. The SPN8910
has been designed specifically to improve the overall
efficiency of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been
optimized for low gate charge, low RDS(ON) and fast
switching speed.
APPLICATIONS
High Frequency Small Power Switching
forMB/NB/VGA
Network DC/DC Power System
Load Switch
FEATURES
100V/2A,RDS(ON)= 320mΩ@VGS= 10V
High density cell design for extremely low RDS (ON)
Exceptional on-resistance and maximum DC current
capability
SOT-89 package design
PIN CONFIGURATION
SOT-89
G
D
S
1
2
3
PART MARKING
SPN8910
AAAAAA
BBBBBB
2010/12/09 Preliminary
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SPN8910
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
Symbol
Description
1
G
Gate
2
D
Drain
3
S
Source
Package
Part Marking
ORDERING INFORMATION
Part Number
SPN8910S89RGB
SOT-89
SPN8910S89TGB
SOT-89
※ SPN8910S89RGB : Tape Reel ; Pb – Free ; Halogen - Free
※ SPN8910S89TGB : Tube ; Pb – Free ; Halogen - Free
SPN8910
SPN8910
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
100
V
Gate –Source Voltage
VGSS
±20
V
Continuous Drain Current(TJ=150℃)
TA=25℃
TA=70℃
ID
2.2
1.7
A
IDM
5.5
A
PD
1.5
W
TJ
-55/150
℃
Storage Temperature Range
TSTG
-55/150
℃
Thermal Resistance-Junction to Ambient
RθJA
85
℃/W
Pulsed Drain Current
Power Dissipation
TA=25℃
Operating Junction Temperature
2010/12/09 Preliminary
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SPN8910
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Min.
V(BR)DSS VGS=0V,ID=250uA
100
Typ
Max.
2.0
2.5
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
VGS(th) VDS=VGS,ID=250uA
Gate Leakage Current
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current
ID(on)
1
VDS=0V,VGS=±20V
VDS=80V,VGS=0V
VDS=80V,VGS=0V
TJ=55℃
VDS≥5V,VGS =10V
Drain-Source On-Resistance
RDS(on)
Forward Transconductance
gfs
VGS= 10V,ID=2A
VGS= 4.5V,ID=1A
VDS=5V,ID=2A
Diode Forward Voltage
VSD
IS=1A,VGS =0V
±100
1
5
2.2
V
nA
uA
A
0.30
0.31
2.4
0.32
0.34
Ω
Ω
S
1.2
V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
9
VDS=50V,VGS=10V
ID= 2A
1.4
508
VDS=15V,VGS=0V
f=1MHz
Coss
Reverse Transfer Capacitance
Crss
16.5
td(on)
2
Turn-Off Time
2010/12/09 Preliminary
tr
td(off)
tf
nC
2
Output Capacitance
Turn-On Time
13
VDD=50V, ID=2A,
VGEN=10V, RG=3.3Ω
pF
29
21.5
nS
11.2
18.8
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SPN8910
N-Channel Enhancement Mode MOSFET
SOT-89 PACKAGE OUTLINE
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SPN8910
N-Channel Enhancement Mode MOSFET
Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the
penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use.
No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions
mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information
previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support
devices or systems without express written approval of SYNC Power Corporation.
©The SYNC Power logo is a registered trademark of SYNC Power Corporation
©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved
SYNC Power Corporation
7F-2, No.3-1, Park Street
NanKang District (NKSP), Taipei, Taiwan 115
Phone: 886-2-2655-8178
Fax: 886-2-2655-8468
©http://www.syncpower.com
2010/12/09 Preliminary
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