TYSEMI 2SD601A

Transistors
IC
SMD Type
Product specification
2SD601A
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
0.4
3
Mini type package, allowing downsizing of the equipment and
1
0.55
Low collector to emitter saturation voltage VCE(sat).
+0.1
1.3-0.1
+0.1
2.4-0.1
High foward current transfer ratio hFE.
2
automatic insertion through the tape packing and the magazine
+0.1
0.95-0.1
+0.1
1.9-0.1
+0.05
0.1-0.01
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
packing.
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
7
V
Collector current
IC
100
mA
Peak collector current
ICP
200
mA
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base voltage
VCBO
IC = 20 ìA, IE = 0
60
V
Collector-emitter voltage
VCEO
IC = 2 mA, IB = 0
50
V
Emitter-base voltage
VEBO
IE = 10 ìA, IC = 0
7
Collector-base current
ICBO
VCB = 20 V, IE = 0 A
0.1
ìA
Collector-emitter current
ICEO
VCE = 10 V, IB = 0 A
100
ìA
hFE
VCE = 10 V, IC = 2 mA
Forward current transfer ratio
Collector to emitter saturation voltage
160
VCE(sat) IC = 100 mA, IB = 10 mA
Transition frequency
Noise voltage
460
0.1
0.3
V
VCB = 10 V, IE = -2 mA , f = 200 MHz
150
MHz
Cob
VCB = 10V , IE = 0 , f = 1.0MHz
3.5
pF
NV
VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100kW, Function = FLAT
110
mV
fT
Collector output capacitance
V
hFE Classification
Marking
ZQ
ZR
ZS
hFE
160 260
210 340
290 460
http://www.twtysemi.com
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4008-318-123
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