TYSEMI 2SK2887

IC
SMD Type
Product specification
2SK2887
Features
TO-252
Unit: mm
Low on-resistance.
Fast switching speed.
+0.15
1.50-0.15
+0.15
6.50-0.15
+0.2
5.30-0.2
+0.1
2.30-0.1
+0.8
0.50-0.7
Easy to parallel.
2.3
+0.1
0.60-0.1
+0.15
5.55-0.15
0.127
max
+0.25
2.65-0.1
+0.1
0.80-0.1
+0.28
1.50-0.1
Easily designed drive circuits.
+0.15
0.50-0.15
30V.
+0.2
9.70-0.2
Gate-source voltage (VGSS) guaranteed to be
3.80
Wide SOA (safe operating area).
1 Gate
+0.15
4.60-0.15
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to source voltage
VDSS
200
V
Gate to source voltage
VGSS
30
V
ID
3
A
Idp *
12
A
W
Drain current
Power dissipation
PD
20
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
* PW
10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Drain to source breakdown voltage
VDSS
ID=1mA,VGS=0
Drain cut-off current
IDSS
VDS=200V,VGS=0
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain to source on-state resistance
Min
VGS= 30V,VDS=0
VDS=10V,ID=1mA
2.0
Yfs
VDS=10V,ID=1.5A
0.6
RDS(on)
VGS=10V,ID=1.5A
Output capacitance
Coss
100
4.0
1.5
0.7
VDS=10V,VGS=0,f=1MHZ
Unit
V
100
IGSS
Ciss
Max
200
VGS(th)
Input capacitance
Typ
A
nA
V
S
0.9
230
pF
100
pF
Reverse transfer capacitance
Crss
35
pF
Turn-on delay time
ton
10
ns
Rise time
tr
12
ns
Turn-off delay time
toff
Fall time
tf
Reverse recovery time
trr
Reverse recovery charge
http://www.twtysemi.com
ID=1.5A,VGS(on)=10V,RL=68 ,RG=10
,VDD=100V
IDR=3A,VGS=0V,di/dt=100A/
Qrr
[email protected]
s
26
ns
34
ns
96
ns
0.56
4008-318-123
c
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